NTE NTE2409 Silicon pnp transistor general purpose amp, surface mount (compl to nte2408) Datasheet

NTE2409
Silicon PNP Transistor
General Purpose Amp, Surface Mount
(Compl to NTE2408)
Description:
The NTE2409 is a silicon PNP general purpose transistor in a SOT–23 type surface mount package
designed for use in driver stages of audio amplifiers in thick and thin–film hybrid circuits.
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Emitter Current, IEM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Peak Base Current, IBM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total Power Dissipation (TA = +60°C, Note 1), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 ° to +150°C
Thermal Resistance, Junction–to–Tab, RthJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Thermal Resistance, Tab–to–Soldering Points, RthTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W
Thermal Resistance, Soldering Points–to–Ambient (Note 1), RthSA . . . . . . . . . . . . . . . . . . . . 90K/W
Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm).
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Collector Cutoff Current
Base–Emitter Voltage
Collector–Emitter Saturation Voltage
Symbol
ICBO
VBE
VCE(sat)
Test Conditions
Min
Typ
Max
Unit
VCB = 30V, IE = 0
–
1
15
nA
VCB = 30V, IE = 0, TJ = +150°C
–
–
4
µA
VCE = 5V, IC = 2mA, Note 2
600
650
750
mV
VCE = 5V, IC = 10mA, Note 2
–
–
820
mV
IC = 10mA, IB = 0.5mA, Note 3
–
75
300
mV
IC = 100mA, IB = 5mA, Note 3
–
250
650
mV
Note 2. VBE decreases by about 2mV/K with increasing temperature.
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
Electrical Characteristics (Cont’d): (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Base–Emitter Saturation Voltage
VBE(sat)
DC Current Gain
hFE
Test Conditions
Min
Typ
Max
Unit
IC = 10mA, IB = 0.5mA, Note 3
–
700
–
mV
IC = 100mA, IB = 5mA, Note 3
–
850
–
mV
220
–
475
VCE = 5V, IC = 2mA
Transition Frequency
fT
VCE = 5V, IC = 10mA, f = 35MHz
–
150
–
MHz
Collector Capacitance
Cc
VCB = 10V, IE = Ie = 0, f = 1MHz
–
4.5
–
pF
Small–Signal Current Gain
hfe
VCE = 5V, IC = 2mA
75
–
900
Noise Figure
NF
VCE = 5V, IC = 200µA, f = 1kHz,
B = 200Hz, RS = 2kΩ
–
2
10
Note 3. VBE(sat) decreases by about 1.7mV with increasing temperature.
.016 (0.48)
C
B
.098
(2.5)
Max
E
.037 (0.95)
.074 (1.9)
.118 (3.0) Max
.051
(1.3)
.043 (1.1)
.007 (0.2)
dB
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