SUP/SUB85N10-10 Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0105 at VGS = 10 V 100 0.012 at VGS = 4.5 V • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature ID (A) Available RoHS* 85a COMPLIANT TO-220AB D TO-263 G DRAIN connected to TAB G G D S D S Top View S SUB85N10-10 N-Channel MOSFET Top View SUP85N10-10 ORDERING INFORMATION Package TO-220AB TO-263 Tin/Lead Plated SUP85N10-10 SUB85N10-10 Lead (Pb)-free SUP85N10-10-E3 SUB85N10-10-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energyb Symbol VDS VGS TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C (TO-220AB and TO-263) Maximum Power Dissipationb TA = 25 °C (TO-263)d Operating Junction and Storage Temperature Range Limit 100 ± 20 85a 60a 240 75 280 250c 3.75 - 55 to 175 ID IDM IAS EAS PD TJ, Tstg Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Symbol PCB Mount (TO-263)d Free Air (TO-220AB) Junction-to-Case RthJA RthJC Limit 40 62.5 0.6 Unit °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve fo voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71141 S-61008–Rev. D, 12-Jun-06 www.vishay.com 1 SUP/SUB85N10-10 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 µA 100 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 100 V, VGS = 0 V 1 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea IDSS ID(on) rDS(on) 3 VDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 VDS = ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 30 A 120 VGS = 4.5 V, ID = 20 A 0.0105 0.010 0.0012 VGS = 10 V, ID = 30 A, TJ = 125 °C gfs Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) Rise Timec Turn-Off DelayTimec Fall Timec tr td(off) VDS = 15 V, ID = 30 A 0.017 Forward Voltagea Reverse Recovery Time VSD Peak Reverse Recovery Current S 665 Reverse Recovery Charge Qrr pF 265 105 VDS = 50 V, VGS = 10 V, ID = 85 A 160 nC 17 23 VDD = 50 V, RL = 0.6 Ω ID ≅ 85 A, VGEN = 10 V, Rg = 2.5 Ω 12 25 90 135 55 85 130 195 85 240 IF = 85 A, VGS = 0 V trr IRM(REC) Ω 6550 VGS = 0 V, VDS = 25 V, f = 1 MHz tf Pulsed Current µA 0.022 25 Source-Drain Diode Ratings and Characteristics (TC = 25 °C)b IS Continuous Current ISM nA A 0.0085 VGS = 10 V, ID = 30 A, TJ = 175 °C Forward Transconductancea V IF = 50 A, di/dt = 100 A/µs ns A 1.0 1.5 V 85 140 ns 4.5 7 0.17 0.35 A µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71141 S-61008–Rev. D, 12-Jun-06 SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 250 200 VGS = 10 thru 6 V 5V I D − Drain Current (A) I D − Drain Current (A) 200 150 100 4V 50 150 100 TC = 125 °C 50 25 °C - 55 °C 3V 0 0 0 2 4 6 8 10 0 1 VDS − Drain-to-Source Voltage (V) 2 3 4 5 6 VGS− Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 250 0.020 TC = - 55 °C r DS(on) − On-Resistance (Ω) g fs − Transconductance (S) 200 25 °C 150 125 °C 100 50 0 0.015 VGS = 4.5 V VGS = 10 V 0.010 0.005 0.000 0 20 40 60 80 100 0 20 40 ID − Drain Current (A) 80 100 120 ID − Drain Current (A) Transconductance On-Resistance vs. Drain Current 10000 V GS − Gate-to-Source Voltage (V) 20 8000 C − Capacitance (pF) 60 Ciss 6000 4000 2000 Crss Coss 0 VDS = 50 V ID = 85 A 16 12 8 4 0 0 15 30 45 60 VDS − Drain-to-Source Voltage (V) Capacitance Document Number: 71141 S-61008–Rev. D, 12-Jun-06 75 0 50 100 150 200 Qg − Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUP/SUB85N10-10 Vishay Siliconix TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 2.5 100 VGS = 10 V ID = 30 A I S − Source Current (A) rDS(on) − On-Resistance (Normalized) 2.0 1.5 1.0 TJ = 150 °C TJ = 25 °C 10 0.5 0.0 - 50 - 25 0 25 50 75 100 125 150 1 0 175 0.3 TJ − Junction Temperature (°C) 140 130 V(BR)DSS (V) 100 IAV (A) at T A = 25 °C I Dav (a) 1.2 Source-Drain Diode Forward Voltage 1000 10 IAV (A) at T A = 150 °C ID = 250 µA 120 110 1 100 0.1 0.0001 0.001 0.01 0.1 tin (Sec) Avalanche Current vs. Time www.vishay.com 4 0.9 VSD− Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.00001 0.6 1 90 - 50 - 25 0 25 50 75 100 125 150 175 TJ − Junction Temperature (°C) TJ - Drain-Source Breakdown vs. Junction-Temperature Document Number: 71141 S-61008–Rev. D, 12-Jun-06 SUP/SUB85N10-10 Vishay Siliconix THERMAL RATINGS 1000 100 10 µs 100 I D − Drain Current (A) I D − Drain Current (A) 80 60 40 100 µs 10 *Limited by rDS(on) 1 ms 10 ms 100 ms dc 1 20 TC = 25 °C Single Pulse 0.1 0 0 25 50 75 100 125 150 175 0.1 TC − Ambient Temperature (°C) 100 1 10 1000 VDS − Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified *VGS Maximum Avalanche and Drain Current vs. Case Temterature Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71141. Document Number: 71141 S-61008–Rev. D, 12-Jun-06 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1