APTGF150DH120G Asymmetrical - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives VBUS Q1 CR3 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 VBUS Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant 0/VBUS E1 E4 G4 OUT2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area Tc = 25°C Max ratings 1200 200 150 300 ±20 961 Tj = 150°C 300A @ 1200V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A July, 2006 E1 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF150DH120G – Rev 2 G1 G1 VCES = 1200V IC = 150A @ Tc = 80°C APTGF150DH120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Diode ratings and characteristics Symbol Characteristic VRRM IRM Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Test Conditions IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge 4.5 Typ 10.2 1.4 0.75 120 50 310 20 Max 350 600 3.7 Unit 6.5 ±500 V nA Max Unit ns 30 18 mJ 8 Typ Max IF = 200A IF = 400A IF = 200A IF = 200A VR = 800V di/dt = 400A/µs www.microsemi.com Unit V Tj = 25°C Tj = 125°C Tc = 70°C V ns 1200 VR=1200V µA nF 130 60 360 Min Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ 3.2 3.9 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 150A R G = 5.6Ω VGE = 15V Tj = 125°C VBus = 600V IC = 150A Tj = 125°C R G = 5.6Ω Turn-on Delay Time Rise Time Turn-off Delay Time Tf Min 350 600 Tj = 125°C 200 2 2.3 1.8 Tj = 25°C 420 Tj = 125°C 520 Tj = 25°C Tj = 125°C 2.5 10.7 µA A 2.5 V ns July, 2006 ICES Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 150A Tj = 125°C VGE = VCE, IC = 5 mA VGE = ±20V, VCE = 0V µC 2-5 APTGF150DH120G – Rev 2 Symbol Characteristic APTGF150DH120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.13 0.32 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF150DH120G – Rev 2 July, 2006 SP6 Package outline (dimensions in mm) APTGF150DH120G Typical Performance Curve Output Characteristics 300 250 250 150 VGE =20V VGE=12V 150 VG E=9V 100 TJ=125°C 50 50 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 V CE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 300 56 VCE = 600V VGE = 15V R G = 5.6 Ω T J = 125°C 48 250 40 E (mJ) 200 TJ=125°C 150 100 Eon 32 24 16 TJ=25°C 50 8 Eoff 0 0 5 6 7 8 9 10 11 0 12 50 100 150 200 250 300 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 70 350 50 40 300 250 Eon IC (A) VCE = 600V VG E =15V IC = 150A TJ = 125°C 60 E (mJ) VGE =15V 200 100 IC (A) TJ = 125°C TJ=25°C 200 IC (A) IC (A) Output Characteristics (VGE=15V) 300 30 20 200 150 VGE=15V TJ=125°C R G=5.6 Ω 100 Eoff 50 10 0 0 0 5 0 10 15 20 25 30 35 40 45 50 Gate Resistance (ohms) 300 600 900 1200 1500 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.08 0.06 0.9 IGBT 0.7 0.5 July, 2006 0.12 0.3 0.04 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF150DH120G – Rev 2 Thermal Impedance (°C/W) 0.14 APTGF150DH120G Forward Characteristic of diode 500 90 80 70 60 ZVS ZCS 50 VCE =600V D=50% RG =5.6 Ω TJ=125°C TC=75°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 40 hard switching 30 20 300 TJ=125°C 200 TJ=25°C 100 10 0 0 0 40 80 120 160 0 200 0.5 IC (A) 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.15 0.1 0.05 Diode 0.5 0.3 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein www.microsemi.com 5-5 APTGF150DH120G – Rev 2 July, 2006 Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.