Fairchild FCB36N60N N-channel supremosâ® mosfet 600 v, 36 a, 90 mî© Datasheet

FCB36N60N
N-Channel SupreMOS® MOSFET
600 V, 36 A, 90 mΩ
Features
Description
• RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A
The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction (SJ) technology
employing a deep trench filling process that differentiate it from
the conventional MOSFETs. This advanced technology and precise process control provide lowest Rsp on-resistance, superior
switching performance and ruggedness. SupreMOS MOSFET is
suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX
power and industrial power applications.
• Ultra low gate charge (Typ. Qg = 86 nC)
• Low effective output capacitance (Typ. Coss.eff = 361 pF)
• 100% avalanche tested
• RoHS compliant
Applications
• Solar Inverter
• AC-DC Power Supply
D
D
G
G
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Unit
V
±30
V
-Continuous (TC = 25oC)
36
-Continuous (TC = 100oC)
22.7
- Pulsed
Peak Diode Recovery dv/dt
A
(Note 1)
108
A
(Note 2)
1800
mJ
MOSFET dv/dt Ruggedness
(Note 3)
12
A
3.12
mJ
100
V/ns
20
V/ns
(TC = 25oC)
312
W
- Derate above 25oC
2.6
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
FCB36N60N
600
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCB36N60N
RθJC
Thermal Resistance, Junction to Case
0.4
RθJA*
Thermal Resistance, Junction to Ambient *
40
RθJA
Thermal Resistance, Junction to Ambient
Unit
o
C/W
62.5
*When mounted on the minmium pad size recommended (PCB Mount)
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
1
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
March 2013
Device Marking
FCB36N60N
Device
FCB36N60N
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
600
-
-
V
-
0.7
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, VGS = 0 V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, VGS = 0 V
-
-
10
VDS = 480 V, VGS = 0 V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±30 V, VDS = 0 V
-
-
±100
ID = 1 mA, Referenced to 25oC
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
2.0
-
4.0
V
Static Drain to Source On Resistance
VGS = 10 V, ID = 18 A
-
81
90
mΩ
gFS
Forward Transconductance
VDS = 40 V, ID = 18 A
-
41
-
S
VDS = 100 V, VGS = 0 V
f = 1 MHz
-
3595
4785
pF
-
149
200
pF
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
-
4
6
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1 MHz
-
80
-
pF
Cosseff.
Effective Output Capacitance
VDS = 0 V to 380 V, VGS = 0 V
-
361
-
pF
Qg(tot)
Total Gate Charge at 10V
-
86
112
nC
Qgs
Gate to Source Gate Charge
-
15.4
-
nC
Qgd
Gate to Drain “Miller” Charge
VDS = 380 V, ID = 18 A,
VGS = 10 V
-
26.4
-
nC
ESR
Equivalent Series Resistance (G-S)
-
1
-
Ω
-
23
56
ns
-
22
54
ns
-
94
198
ns
-
4
18
ns
(Note 4)
Drain Open
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 18 A
RG = 4.7 Ω
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
36
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
108
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 18 A
-
-
1.2
V
trr
Reverse Recovery Time
-
574
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 18 A
dIF/dt = 100 A/μs
10
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 12 A, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 36 A, di/dt ≤ 200 A/μs, VDD = 380 V, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
2
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
Package Marking and Ordering Information
FCB36N60N N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1000
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
ID, Drain Current[A]
ID, Drain Current[A]
100
1
100
o
150 C
o
25 C
10
o
-55 C
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
o
2. TC = 25 C
0.1
0.1
1
10
VDS, Drain-Source Voltage[V]
0.3
100
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
300
IS, Reverse Drain Current [A]
0.2
VGS = 10V
0.1
VGS = 20V
100
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
o
*Notes: TC = 25 C
0
0
20
40
60
ID, Drain Current [A]
80
1
0.4
100
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
1000
Coss
10
1
0.1
1.2
10
10000
100
0.6
0.8
1.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
100000
Capacitances [pF]
7
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
0.3
RDS(ON) [Ω],
Drain-Source On-Resistance
3
4
5
6
VGS, Gate-Source Voltage[V]
*Notes:
1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain-Source Voltage [V]
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
Crss
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Notes: ID = 18A
0
600
0
3
25
50
75
Qg, Total Gate Charge [nC]
100
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 1mA
0.8
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 18A
0.5
0.0
-80
160
Figure 9. Maximum Safe Operating Area
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
160
Figure 10. Maximum Drain Current
vs. Case Temperature
1000
40
100
20μs
100μs
1ms
10ms
DC
10
ID, Drain Current [A]
ID, Drain Current [A]
2.5
Operation in This Area
is Limited by R DS(on)
1
*Notes:
o
0.1
30
20
10
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage [V]
0
25
1000
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
1
0.5
PDM
0.1
PDM
t1
t2
0.2
t1
t2
0.1
*Notes:
0.05
o
1. ZθJC(t) = 0.4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.02
0.01
Single pulse
0.01
-5
10
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
4
10
2
10
3
10
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FCB36N60N N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
5
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
6
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
Mechanical Dimensions
D2PAK
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I64
©2010 Fairchild Semiconductor Corporation
FCB36N60N Rev. C0
8
www.fairchildsemi.com
FCB36N60N N-Channel MOSFET
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