APT22F120B2 APT22F120L 1200V, 23A, 0.70Ω Max, trr ≤270ns N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. T-MaxTM TO-264 APT22F120B2 APT22F120L D Single die FREDFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI • ZVS phase shifted and other full full bridge • Low trr for high reliability • Half bridge • Ultra low Crss for improved noise immunity • PFC and other boost converter • Low gate charge • Buck converter • Avalanche energy rated • Single and two switch forward • RoHS compliant • Flyback Absolute Maximum Ratings Symbol Parameter ID Unit Ratings Continuous Drain Current @ TC = 25°C 23 Continuous Drain Current @ TC = 100°C 15 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1875 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 12 A 1 90 Thermal and Mechanical Characteristics Min Characteristic Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 1040 RθJC Junction to Case Thermal Resistance 0.12 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range 150 °C Soldering Temperature for 10 Seconds (1.6mm from case) WT Package Weight 300 0.22 oz 6.2 g 10 in·lbf 1.1 N·m Mounting Torque ( TO-264 Package), 4-40 or M3 screw MicrosemiWebsite-http://www.microsemi.com 04-2009 TL Torque -55 Rev C TJ,TSTG °C/W 0.11 050-8081 Symbol Static Characteristics Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ Parameter Test Conditions Min Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 1200 Drain-Source On Resistance 3 VGS(th) Gate-Source Threshold Voltage VGS = 10V, ID = 12A Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current Dynamic Characteristics VDS = 1200V Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance APT22F120B2_L Typ Max 1.41 0.53 4 -10 0.70 5 TJ = 25°C VGS = 0V 250 1000 ±100 TJ = 125°C VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 2.5 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient IDSS Symbol Reference to 25°C, ID = 250µA Breakdown Voltage Temperature Coefficient RDS(on) ΔVGS(th)/ΔTJ TJ = 25°C unless otherwise specified Min Test Conditions VDS = 50V, ID = 12A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 27 8370 100 615 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 240 VGS = 0V, VDS = 0V to 800V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 125 260 42 120 45 27 145 42 VGS = 0 to 10V, ID = 12A, VDS = 600V Resistive Switching VDD = 800V, ID = 12A RG = 2.2Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Reverse Recovery Current dv/dt Peak Recovery dv/dt Test Conditions Min Typ D MOSFET symbol showing the integral reverse p-n junction diode (body diode) Max 23 A G 90 S ISD = 12A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 12A 3 TJ = 25°C diSD/dt = 100A/µs TJ = 125°C Unit TJ = 25°C TJ = 125°C ISD ≤ 12A, di/dt ≤1000A/µs, VDD = 800V, TJ = 125°C 375 720 2.2 5.8 12.3 16.5 1.1 425 850 V ns µC A 25 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 26.04mH, RG = 25Ω, IAS = 12A. 050-8081 Rev C 04-2009 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -3.80E-7/VDS^2 + 4.62E-8/VDS + 6.57E-11. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT22F120B2_L 20 60 V GS = 10V T = 125°C J 16 TJ = -55°C ID, DRIAN CURRENT (A) ID, DRAIN CURRENT (A) 50 40 30 TJ = 25°C 20 GS 12 5V 8 4 10 0 4.5V TJ = 125°C TJ = 150°C 0 0 5 10 15 20 25 30 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 0 Figure 1, Output Characteristics 3.0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics 90 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 80 VGS = 10V @ 12A 2.5 ID, DRAIN CURRENT (A) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE = 6, 7, 8 & 9V V 2.0 1.5 1.0 70 60 TJ = -55°C 50 TJ = 25°C 40 TJ = 125°C 30 20 0.5 10 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 0 35 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 TJ = -55°C 25 C, CAPACITANCE (pF) TJ = 25°C 20 TJ = 125°C 15 10 1000 Coss 100 5 2 4 6 8 10 12 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 10 14 200 400 600 800 1000 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 16 90 14 12 VDS = 240V 10 VDS = 600V 8 6 VDS = 960V 4 2 0 50 100 150 200 250 300 350 400 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) VGS, GATE-TO-SOURCE VOLTAGE (V) ID = 12A 0 0 80 70 60 50 40 TJ = 25°C 30 TJ = 150°C 20 10 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 04-2009 0 Rev C 0 Crss 050-8081 gfs, TRANSCONDUCTANCE 30 200 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) APT22F120B2_L 200 10 13µs 100µs 1ms 1 10ms Rds(on) 0.1 Rds(on) 10 13µs 100µs 1ms TJ = 150°C TC = 25°C 1 DC line 0.1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area 10ms Scaling for Different Case & Junction Temperatures: 100ms ID = ID(T = 25°C)*(TJ - TC)/125 C DC line 100ms TJ = 125°C TC = 75°C 1 IDM 1 10 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.12 D = 0.9 0.10 0.7 0.08 Note: 0.5 0.06 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.14 0.3 0.04 t2 t1 = Pulse Duration SINGLE PULSE 0.02 0 t1 t Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.1 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 TO-264 (L) Package Outline T-MAX™ (B2) Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 04-2009 Rev C 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 050-8081 25.48 (1.003) 26.49 (1.043) 19.81 (.780) 21.39 (.842) Gate Drain Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 2.29 (.090) 2.69 (.106) Gate Drain Source