EMB3 DIGITAL TRANSISTOR (PNP+ PNP) SOT-563 FEATURES z Two DTA143T chips in a package z Transistor elements are independent, eliminating interference. z Mounting cost and area can be cut in half. 1 External circuit MARKING: B3 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit V(BR)CBO -50 V Collector-emitter voltage V(BR)CEO -50 V Emitter-base V(BR)EBO -5 V Collector current IC -100 mA Collector Power dissipation PC 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Collector-base voltage voltage Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions Collector-base breakdown voltage V(BR)CBO -50 V IC=-50μA Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-1mA Emitter-base breakdown voltage V(BR)EBO -5 V IE=-50μA Collector cut-off current ICBO -0.5 μA VCB=-50V Emitter cut-off current IEBO -0.5 μA VEB=-4V VCE(sat) -0.3 V IC=-5mA,IB=-2.5mA Collector-emitter saturation voltage DC current transfer ratio hFE 100 Input resistance R1 3.29 Transition frequency fT 600 4.7 250 6.11 VCE=-5V,IC=-1mA KΩ MHz VCE=10V ,IE=-5mA,f=100MHz 1 JinYu semiconductor www.htsemi.com Date:2011/ 05