MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) Complementary Plastic Silicon Power Transistors The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications. Features • • • • • High DC Current Gain High Current−Gain − Bandwidth Product Annular Construction for Low Leakages Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* http://onsemi.com 3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS MAXIMUM RATINGS Rating Symbol Collector−Base Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Collector−Emitter Voltage MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G Value Unit VCB NPN COLLECTOR 2, 4 COLLECTOR 2, 4 Vdc 60 80 100 3 BASE VCEO 3 BASE Vdc 40 60 80 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak 1 EMITTER VEB 7.0 Vdc IC 3.0 Adc ICM 6.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 12.5 0.012 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 1.5 0.1 W W/_C TJ, Tstg −65 to +150 _C ESD − Human Body Model HBM 3B V ESD − Machine Model MM C V Operating and Storage Junction Temperature Range PNP 1 EMITTER TO−225 CASE 77−09 STYLE 1 1 2 3 MARKING DIAGRAM YWW JE1xxG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Y WW JE1xx G = Year = Work Week = Specific Device Code x = 70, 71, 72, 80, 81, or 82 = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 13 1 Publication Order Number: MJE171/D MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 10 _C/W Thermal Resistance, Junction−to−Ambient RqJA 83.4 _C/W Min Max Unit ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0) MJE170G, MJE180G MJE171G, MJE181G MJE172G, MJE182G VCEO(sus) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) MJE170G, MJE180G (VCB = 80 Vdc, IE = 0) MJE171G, MJE181G (VCB = 100 Vdc, IE = 0) MJE172G, MJE182G (VCB = 60 Vdc, IE = 0, TC = 150°C) MJE170G, MJE180G (VCB = 80 Vdc, IE = 0, TC = 150°C) MJE171G, MJE181G (VCB = 100 Vdc, IE = 0, TC = 150°C) MJE172G, MJE182G ICBO Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO Vdc 40 60 80 − − − − 0.1 − 0.1 − 0.1 − 0.1 − 0.1 − 0.1 50 30 12 250 − − − − − 0.3 0.9 1.7 − − 1.5 2.0 − 1.2 50 − mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = 500 mAdc, VCE = 1.0 Vdc) (IC = 1.5 Adc, VCE = 1.0 Vdc) hFE Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VCE(sat) Base−Emitter Saturation Voltage (IC = 1.5 Adc, IB = 150 mAdc) (IC = 3.0 Adc, IB = 600 mAdc) VBE(sat) Base−Emitter On Voltage (IC = 500 mAdc, VCE = 1.0 Vdc) VBE(on) − Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (Note 1) (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJE171G/MJE172G MJE181G/MJE182G Cob MHz pF − − 60 40 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. fT = ⎪hfe⎪• ftest. http://onsemi.com 2 PD, POWER DISSIPATION (WATTS) MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) TA 2.8 TC 14 2.4 12 2.0 10 1.6 8.0 TC 1.2 6.0 0.8 4.0 TA 0.4 2.0 0 0 20 40 80 60 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating VCC +30 V 1K 500 300 200 RC 25 ms +11 V SCOPE RB t, TIME (ns) D1 51 tr 100 0 -9.0 V tr, tf ≤ 10 ns -4 V DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES. 50 30 20 td 10 5 3 2 NPN MJE181/182 PNP MJE171/172 1 1 2 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (AMPS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 0.03 3 5 10 Figure 3. Turn−On Time Figure 2. Switching Time Test Circuit 1.0 0.7 0.5 VCE = 30 V IC/IB = 10 VBE(off) = 4.0 V TJ = 25°C qJC(t) = r(t) qJC qJC = 10°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.05 0.02 0.01 0 (SINGLE PULSE) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 t, TIME (ms) 5.0 Figure 4. Thermal Response http://onsemi.com 3 10 20 50 100 200 MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) ACTIVE−REGION SAFE OPERATING AREA 10 5.0 5.0 100ms IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) 10 500ms 2.0 1.0 dc 0.5 0.2 0.1 0.05 0.02 0.01 1.0 5.0ms TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO MJE171 MJE172 2.0 3.0 5.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100ms 2.0 500ms 1.0 5.0ms 0.5 TJ = 150°C BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25°C (SINGLE PULSE) SECOND BREAKDOWN LIMITED CURVES APPLY BELOW MJE181 RATED VCEO MJE182 0.2 0.1 0.05 0.02 0.01 1.0 100 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. MJE171, MJE172 Figure 6. MJE181, MJE182 The data of Figures 5 and 6 is based on TJ(pk) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calculated from the data in Figure 4. At high case temperature, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. There are two limitations on the power handling ability of a transistor − average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. 10K 100 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 1K 500 300 200 ts 100 tf 50 30 20 PNP MJE171/MJE172 NPN MJE181/MJE182 70 C, CAPACITANCE (pF) 5K 3K 2K t, TIME (ns) dc 50 Cib 30 20 Cob NPN MJE181/182 PNP MJE171/172 10 10 0.01 0.02 0.03 0.05 0.1 0.2 0.3 TJ = 25°C 0.5 1 2 3 5 10 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 7.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance Figure 7. Turn−Off Time http://onsemi.com 4 30 50 MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) ORDERING INFORMATION Package Shipping MJE170G Device TO−225 (Pb−Free) 500 Units / Box MJE171G TO−225 (Pb−Free) 500 Units / Box MJE172G TO−225 (Pb−Free) 500 Units / Box MJE180G TO−225 (Pb−Free) 500 Units / Box MJE181G TO−225 (Pb−Free) 500 Units / Box MJE182G TO−225 (Pb−Free) 500 Units / Box http://onsemi.com 5 MJE170G, MJE171G, MJE172G (PNP), MJE180G, MJE181G, MJE182G (NPN) PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE171/D