PHILIPS BFG31 Pnp 5 ghz wideband transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BFG31
PNP 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 12
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
FEATURES
BFG31
PINNING
 High output voltage capability
PIN
DESCRIPTION
 High gain bandwidth product
1
emitter
 Good thermal stability
2
base
 Gold metallization ensures
excellent reliability.
3
emitter
4
collector
4
lfpage
DESCRIPTION
PNP planar epitaxial transistor
mounted in a plastic SOT223
envelope.
1
2
Top view
3
MSB002 - 1
Fig.1 SOT223.
It is intended for wideband amplifier
applications.
NPN complement is the BFG97.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


15
V


100
mA
up to Ts = 135 C ; note 1


1
W
DC current gain
IC = 70 mA; VCE = 10 V;
Tamb = 25 C
25


fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

5.0

GHz
GUM
maximum unilateral power
gain
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 C

12

dB
Vo
output voltage
IC = 100 mA; VCE = 10 V;
RL = 75 ; Tamb = 25 C

600

mV
VCEO
collector-emitter voltage
IC
DC collector current
Ptot
total power dissipation
hFE
open base
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

20
V
VCEO
collector-emitter voltage
open base

15
V
VEBO
emitter-base voltage
open collector

3
V
IC
DC collector current
Ptot
total power dissipation
Tstg
Tj

100
mA

1
W
storage temperature
65
150
C
junction temperature

175
C
up to Ts = 135 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
1995 Sep 12
2
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
THERMAL RESISTANCE
up to Ts = 135 C; note 1
40 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 10 mA
20


V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
18


V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
3


V
ICBO
collector cut-off current
IE = 0; VCB = 10 V


1
A
hFE
DC current gain
IC = 70 mA; VCE = 10 V;
Tamb = 25 C
25


Ccb
collector-base capacitance
IC = 0; VCB = 10 V; f = 1 MHz;

1.8

pF
Ceb
emitter-base capacitance
IC = 0; VEB = 10 V; f = 1 MHz

5

pF
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 1 MHz;
Tamb = 25 C

1.6

pF
fT
transition frequency
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

5

GHz
GUM
maximum unilateral power gain; note 1
IC = 70 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 C

16

dB
IC = 70 mA; VCE = 10 V;
f = 800 MHz; Tamb = 25 C

12

dB
Vo
output voltage
note 2

600

mV
Vo
output voltage
note 3

550

mV
Notes
s 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log ------------------------------------------------------- 1 – s 11 2   1 – s 22 2 
2. dim = 60 dB; IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo at dim = 60 dB; fp = 850.25 MHz;
Vq = Vo 6 dB; fq = 858.25 MHz;
Vr = Vo 6 dB; fr = 860.25 MHz;
measured at f(p+qr) = 848.25 MHz.
3. dim = 60 dB (DIN 45004B); IC = 70 mA; VCE = 10 V; RL = 75 ; Tamb = 25 C;
Vp = Vo = at dim = 60 dB; fp = 445.25 MHz;
Vq = Vo 6 dB; fq = 453.25 MHz;
Vr = Vo 6 dB; fr = 455.25 MHz;
measured at f(p+qr) = 443.25 MHz.
1995 Sep 12
3
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB344
MBB345
1.2
80
handbook,
halfpage
P
handbook, halfpage
tot
(W)
h FE
1.0
60
0.8
0.6
40
0.4
20
0.2
0
0
0
50
100
150
200
T s ( o C)
100
0
I C (mA)
200
VCE = 10 V; Tamb = 25 C.
Fig.3
Fig.2 Power derating curve.
MBB346
DC current gain as a function of collector
current.
MBB347
8
6
handbook, halfpage
handbook, halfpage
C re
(pF)
fT
(GHz)
5
6
4
4
3
2
2
1
0
0
10
20
VCE (V)
0
30
f = 1 MHz; Tamb = 25 C
Fig.4
I C (mA)
100
VCE = 10 V; Tamb = 25 C.
Feedback capacitance as a function of
collector-emitter voltage.
1995 Sep 12
50
Fig.5
4
Transition frequency as a function of
collector current.
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
MBB348
MBB349
50
40
handbook, halfpage
handbook, halfpage
d im
(dB)
d im
(dB)
45
55
50
55
60
60
65
40
60
80
I C (mA)
65
40
100
VCE = 10 V; Vo = 650 mV; Tamb = 25 C;
f(p+qr) = 443.25 MHz.
Fig.6
60
80
100
120
I C (mA)
VCE = 10 V; Vo = 550 mV; Tamb = 25 C;
f(p+qr) = 848.25 MHz.
Intermodulation distortion as a function
of collector current.
Fig.7
Intermodulation distortion as a function
of collector current.
MBB350
MBB351
10
10
handbook, halfpage
handbook, halfpage
d2
(dB)
d2
(dB)
20
20
30
30
40
40
50
50
60
10
30
50
70
90
60
10
110
I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C;
f(p+q) = 450 MHz.
50
70
90
110
I C (mA)
VCE = 10 V; Vo = 50 dBmV; Tamb = 25 C;
f(p+q) = 810 MHz.
Fig.8 Second order intermodulation distortion
as a function of collector current.
1995 Sep 12
30
Fig.9
5
Second order intermodulation distortion
as a function of collector current.
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
PACKAGE OUTLINE
Plastic surface-mounted package with increased heatsink; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1995 Sep 12
REFERENCES
IEC
JEDEC
JEITA
SC-73
6
EUROPEAN
PROJECTION
ISSUE DATE
04-11-10
06-03-16
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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1995 Sep 12
7
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFG31
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1995 Sep 12
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Printed in The Netherlands
R77/02/pp9
Date of release: 1995 Sep 12
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