Diodes FCX591 Sot89 pnp silicon planar medium Datasheet

SOT89 PNP SILICON PLANAR MEDIUM
POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FCX591
✪
C
PARTMARKING DETAIL COMPLEMENTARY TYPE -
P1
FCX491
E
B
C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-80
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
MAX.
1
W
-65 to +150
°C
PARAMETER
SYMBOL MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
-80
V
IC=-100µ A, IE=0
V(BR)CEO
-60
V
IC=-10mA, IB=0*
V(BR)EBO
-5
V
IE=-100µ A, IC=0
Collector Cut-Off Current
ICBO
-100
nA
VCB=-60V
Collector -Emitter Cut-Off
Current
ICES
-100
nA
VCES=-60V
Emitter Cut-Off Current
IEBO
-100
nA
VEB=-4V, IC=0
Saturation Voltages
VCE(sat)
-0.3
-0.6
V
V
IC=-500mA,
IB=-50mA*
IC=-1A, IB=-100mA*
VBE(sat)
-1.2
V
IC=-1A, IB=-100mA*
Base-Emitter Turn-on Voltage
VBE(on)
-1.0
V
IC=-1A, VCE=-5V*
Static Forward Current Transfer
Ratio
hFE
100
100
80
15
Transition Frequency
fT
150
Output Capacitance
Cobo
IC=-1mA, VCE=-5V*
IC=-500mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
300
10
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical Characteristics graphs see FMMT591 datasheet
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