Fairchild FGPF45N45T 450v, 45a pdp trench igbt Datasheet

FGPF45N45T
tm
450V, 45A PDP Trench IGBT
Features
General Description
• High Current Capability
Using Novel Trench IGBT Technology, Fairchild’s new sesries of
trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
• Low saturation voltage: VCE(sat) =1.6V @ IC = 45A
• High input impedance
• Fast switching
• RoHS complaint
Applications
• PDP System
C
TO-220F
1
1.Gate
2.Collector
G
3.Emitter
E
Absolute Maximum Ratings
Symbol
Description
Ratings
Units
VCES
Collector to Emitter Voltage
450
V
VGES
Gate to Emitter Voltage
±30
V
180
A
ICM (1)
PD
@ TC =
25oC
Maximum Power Dissipation
@ TC =
25oC
Maximum Power Dissipation
@ TC = 100oC
Pulsed Collector Current
51.6
W
20.6
W
TJ
Operating Junction Temperature
-55 to +150
oC
Tstg
Storage Temperature Range
-55 to +150
oC
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
o
300
C
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
* Ic_pluse limited by max Tj
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction to Case
-
2.42
o
RθJA
Thermal Resistance, Junction to Ambient
-
62.5
oC/W
©2007 Fairchild Semiconductor Corporation
FGPF45N45T Rev. A
1
C/W
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
December 2007
Device Marking
Device
Package
Packaging
Type
FGPF45N45T
FGFP45N45TTU
TO-220F
Rail / Tube
Electrical Characteristics of the IGBT
Symbol
Parameter
Max Qty
Qty per Tube
per Box
50ea
-
TC = 25°C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
450
-
-
V
Off Characteristics
BVCES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
∆BVCES
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
-
0.5
-
V/oC
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
-
-
100
µA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
-
-
±400
nA
IC = 250µA, VCE = VGE
3.0
4.3
5.5
V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
IC = 20A, VGE = 15V
-
1.21
1.5
V
IC = 45A, VGE = 15V
-
1.60
-
V
IC = 45A, VGE = 15V,
TC = 125oC
-
1.57
-
V
-
2140
-
pF
VCE = 30V, VGE = 0V,
f = 1MHz
-
130
-
pF
-
102
-
pF
-
26
-
ns
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
FGPF45N45T Rev. A
VCC = 200V, IC = 45A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 45A,
RG = 10Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 45A,
VGE = 15V
2
-
100
-
ns
-
170
-
ns
-
220
330
ns
-
22
-
ns
-
90
-
ns
-
132
-
ns
-
280
-
ns
-
100
-
nC
-
15
-
nC
-
46
-
nC
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
Package Marking and Ordering Information
Figure 1. Typical Output Characteristics
180
180
TC = 25 C
150
20V
12V
120
90
VGE = 8V
10V
90
VGE = 8V
60
30
0
0
0
2
4
Collector-Emitter Voltage, VCE [V]
6
0
Figure 3. Typical Saturation Voltage
Characteristics
2
4
Collector-Emitter Voltage, VCE [V]
6
Figure 4. Transfer Characteristics
180
180
Common Emitter
VGE = 15V
150
TC = 25 C
o
TC = 125 C
120
Common Emitter
VCE = 20V
150
o
Collector Current, IC [A]
Collector Current, IC [A]
15V
12V
120
30
90
60
o
TC = 25 C
o
TC = 125 C
120
90
60
30
30
0
0
0
1
2
3
Collector-Emitter Voltage, VCE [V]
0
4
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector-Emitter Voltage, VCE [V]
1.6
45A
1.4
30A
1.2
IC = 20A
12
3
Common Emitter
o
TC = 25 C
16
12
8
4
30A
IC = 20A
0
50
75
100
125
o
Collector-EmitterCase Temperature, TC [ C]
FGPF45N45T Rev. A
4
6
8
10
Gate-Emitter Voltage,VGE [V]
20
Common Emitter
VGE = 15V
1.0
25
2
Figure 6. Saturation Voltage vs. VGE
1.8
Collector-Emitter Voltage, VCE [V]
20V
150
15V
60
o
TC = 125 C
10V
Collector Current, IC [A]
Collector Current, IC [A]
Figure 2. Typical Output Characteristics
o
0
45A
4
8
12
16
Gate-Emitter Voltage, VGE [V]
20
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
Figure 8. Capacitance Characteristics
20
10000
Common Emitter
Cies
Coes
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
o
TC = 125 C
16
12
8
4
30A
1000
Cres
100
Common Emitter
VGE = 0V, f = 1MHz
45A
IC = 20A
o
TC = 25 C
0
10
0
4
8
12
16
Gate-Emitter Voltage, VGE [V]
1
20
Figure 9. Gate charge Characteristics
500
Common Emitter
o
TC = 25 C
IC MAX (Pulse)
10µs
100
12
VCC = 100V
Collector Current, Ic [A]
Gate-Emitter Voltage, VGE [V]
30
Figure 10. SOA Characteristics
15
200V
9
6
3
0
0
10
Collector-Emitter Voltage, VCE [V]
30
60
90
Gate Charge, Qg [nC]
100µs
1ms
10
10 ms
1
IC MAX (Continuous)
Single Nonrepetitive
Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.1
0.01
0.1
120
Figure 11. Turn-on Characteristics vs.
Gate Resistance
DC Operation
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
500
Switching Time [ns]
Switching Time [ns]
100
tr
td(on)
10
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
tf
td(off)
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
o
TC = 25 C
o
TC = 25 C
o
TC = 125 C
o
1
0
10
20
30
40
50
0
Gate Resistance, RG [Ω]
FGPF45N45T Rev. A
TC = 125 C
10
4
10
20
30
Gate Resistance, RG [Ω]
40
50
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
200
Common Emitter
VGE = 15V, RG = 10Ω
o
TC = 25 C
100
o
Switching Time [ns]
Switching Time [ns]
TC = 125 C
tr
tf
100
td(off)
Common Emitter
VGE = 15V, RG = 10Ω
o
td(on)
TC = 25 C
o
TC = 125 C
10
10
20
30
40
10
10
45
20
Collector Current, IC [A]
30
Figure 15. Switching Loss vs. Gate Resistance
1000
Eoff
Eoff
Switching Loss [µJ]
Switching Loss [µJ]
45
Figure 16. Switching Loss vs.Gate Resistance
1000
Eon
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 45A
100
Eon
10
Common Emitter
VGE = 15V, RG = 10Ω
o
o
TC = 25 C
TC = 25 C
o
o
TC = 125 C
TC = 125 C
10
40
Collector Current, IC [A]
0
10
20
30
40
1
10
50
20
Gate Resistance, RG [Ω]
30
40
45
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
10
0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
single pulse
1E-3
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
Rectangular Pulse Duration [sec]
FGPF45N45T Rev. A
5
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
Typical Performance Characteristics
FGPF45N45T 450V, 45A PDP Trench IGBT
Mechanical Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
0°
(3
9.75 ±0.30
MAX1.47
)
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
FGPF45N45T Rev. A
6
www.fairchildsemi.com
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
®
PDP-SPM™
Power220®
SuperSOT™-8
SyncFET™
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
2.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to result
in a significant injury to the user.
A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FGPF45N45T Rev. A
7
www.fairchildsemi.com
FGPF45N45T 450V, 45A PDP Trench IGBT
TRADEMARKS
Similar pages