Panasonic CNA1006N Photo interrupter Datasheet

Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
16.6
11.8
3.0+0.2
–0.3
A
2-ø1.0 +0
–0.05
Gap width : 3 mm
SEC A-A'
1.6
3.5
A'
4-0.45
(7.6)
15.0
3.5±0.5
Features
Highly precise position detection : 0.3 mm
Optical
center
6.0
1.5
CNA1006N is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
(3.8)
Overview
Slit width
1.5±0.1
,,,,
6.5
5.0
1.5
2.5
For contactless SW, object detection
2-1.5
(2.54)
2-3.3
2
12.6±0.3
2
3
3
Symbol Ratings
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector current
Unit
VR
3
V
IF
50
mA
PD*1
75
mW
IC
20
mA
30
V
5
V
100
mW
Output (Photo Collector to emitter voltage VCEO
transistor)
Emitter to collector voltage VECO
*2
4
Pin connection
1
4
1: Anode 3: Collecter
2: Cathode 4: Emitter
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. Fitting strength is 2N min. (Static load)
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
2.0±0.1
2.0±0.1
1
The type direetly attached to PCB (with positioning pins and
fixing hooks)
Temperature
0.5±0.1
Unit : mm
Collector power dissipation
PC
Operating ambient temperature
Topr –25 to +85
˚C
Storage temperature
Tstg
˚C
– 30 to +100
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2 Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
Forward voltage (DC)
Input
characteristics Reverse current (DC)
VF
IF = 20mA
IR
VR = 3V
Output characteristics Collector cutoff current
ICEO
VCE = 10V
typ
max
1.25
1.4
V
10
µA
200
nA
14
mA
0.4
V
10
Collector current
IC VCE = 5V, IF = 20mA
Transfer
Collector
to
emitter
saturation
voltage
V
IF = 40mA, IC = 1mA
CE(sat)
characteristics
*
Response time
tr , tf VCC = 5V, IC = 1mA, RL = 100Ω
*
min
0.7
5
Unit
µs
Switching time measurement circuit
Sig.IN
VCC
(Input pulse)
Sig.OUT (Output pulse)
RL
,,
,,
50Ω
90%
10%
td
tr
tf
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
1
CNA1006N
Transmissive Photosensors (Photo Interrupters)
IF , IC — Ta
IF — VF
VF — Ta
60
1.6
Ta = 25˚C
IF
30
IC
10
VF (V)
30
20
20
40
60
80
0
100
0
0.4
0.8
1.2
1.6
0
– 40 – 20
2.4
10 –1
10 –1
1
0
20
VCC
10 –1
60
80
Ambient temperature Ta (˚C )
100
Sig.
OUT
RL
tr
,
,,
Sig.
OUT
50Ω
10 –2
10 –1
1
td
80
60
Criterion
0
d
1
Sig.IN
100
VCE = 5V
Ta = 25˚C
IF = 20mA
100Ω
10 –1
80
IC — d
tr (µs)
Rise time
1
60
100
RL = 1kΩ
500Ω
10
40
Ambient temperature Ta (˚C )
VCC = 5V
Ta = 25˚C
10 2
40
40
tr — IC
VCE = 10V
20
80
0
– 40 – 20
10 2
10
10 2
0
IC (%)
10mA
1
ICEO — Ta
10 –2
– 40 – 20
120
Collector to emitter voltage VCE (V)
10
100
20mA
Forward current IF (mA)
10 3
80
VCE = 5V
IF = 20mA
IF = 30mA
10
10 –2
10 –1
10 2
10
60
IC — Ta
IC (%)
1
40
160
Relative output current
1
20
Ta = 25˚C
IC (mA)
10
10 –2
10 –1
0
Ambient temperature Ta (˚C )
IC — VCE
Collector current
IC (mA)
2.0
10 2
VCE = 5V
Ta = 25˚C
Collector current
0.4
Forward voltage VF (V)
IC — IF
ICEO (nA)
1mA
0.8
,,
0
10 2
Dark current
10mA
10
Ambient temperature Ta (˚C )
2
1.2
Relative output current
0
– 25
40
Forward voltage
40
20
IF = 50mA
50
IF (mA)
50
Forward current
Forward current, collector current
IF , IC (mA)
60
90%
10%
40
20
tf
10
Collector current IC (mA)
102
0
0
1
2
3
4
Distance d (mm)
5
6
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