Renesas CR03AM-16A-B 800v-0.3a-thyristor low power use Datasheet

Preliminary Datasheet
CR03AM-16A
R07DS0987EJ0200
Rev.2.00
Jun 14, 2013
800V-0.3A-Thyristor
Low Power Use
Features
•
•
•
•
IT (AV) : 0.3 A
VDRM : 800 V
IGT: 100 μA
Planar Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92*)
2
1. Cathode
2. Anode
3. Gate
3
3
1
2
1
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Non-repetitive peak reverse voltage
VRSM
DC reverse voltage
VR(DC)
Repetitive peak off-state voltage Note1
VDRM
Non-repetitive peak off-state voltage Note1
VDSM
Note1
DC off-state voltage
VD(DC)
Notes: 1. With gate to cathode resistance RGK = 1 kΩ
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
Voltage class
16
Unit
800
960
640
800
960
640
V
V
V
V
V
V
Page 1 of 6
CR03AM-16A
Preliminary
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Symbol
Ratings
Unit
IT(RMS)
IT(AV)
0.47
0.3
A
A
ITSM
20
A
I2t
1.6
A2 s
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.23
W
W
V
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine half wave
180° conduction, Ta=62°C
60Hz sine half wave, 1full cycle,
peak value, non-repetitive
Value corresponding to 1cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Symbol
Min.
Typ.
Max.
Unit
Repetitive peak reverse current
Repetitive peak off-state current
Parameter
IRRM
IDRM
—
—
—
—
0.1
0.1
mA
mA
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
VGT
—
—
0.8
V
Gate non-trigger voltage
VGD
0.2
—
—
V
Gate trigger current
IGT
1 Note2
—
100 Note2
μA
Holding current
Thermal resistance
IH
Rth(j-a)
—
—
—
—
3
180
mA
°C/W
Test conditions
Tj = 125°C, VRRM applied
Tj = 125°C, VDRM applied
RGK = 1 kΩ
Tj = 25°C, ITM = 4 A
instantaneous value
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM
RGK = 1 KΩ
Tj = 25°C, VD = 6 V,
Note3
IT = 0.1 A
Tj = 25°C, VD = 12 V, RGK = 1 kΩ
Junction to ambient
Notes: 2. If special values of IGT are required, choose item A, B, D or E from those listed in the table below if possible.
Item
A
B
D
E
IGT (μA)
1 to 30
20 to 50
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
Page 2 of 6
CR03AM-16A
Preliminary
Performance Curves
Maximum On-State Characteristics
20
Surge On-State Current (A)
Ta = 25°C
100
10−1
10−2
0
1
2
3
× 100 (%)
VGT = 0.8V
(Tj = 25°C)
VGD = 0.2V
10−1
100
IFGM = 0.3A
101
102
Gate Trigger Voltage (V)
103
Typical Example
102
101
100
–40
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
0.8
Typical Distribution
0.6
Typical Example
0.2
0
–40
102
Gate Current (mA)
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
VFGM = 6V
0.4
101
Gate Trigger Current vs.
Junction Temperature
IGT = 100μA
(Tj = 25°C)
10−1
4
Gate Characteristics
PG(AV) = 0.1W
100
8
Conduction Time (Cycles at 60Hz)
PGM = 0.5W
10
12
On-State Voltage (V)
102
1
16
0
100
4
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
On-State Current (A)
101
Rated Surge On-State Current
0
40
80
120
Junction Temperature (°C)
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
160
100
200
101
102
103
10−2
10−1
100
160
120
80
40
0
10−3
Time (s)
Page 3 of 6
CR03AM-16A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
θ = 30°
0.3
0.2
θ
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.4
0.3
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
40
θ = 30° 90° 180°
60° 120°
20
0
0.5
0
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
60°
θ = 30°
0.4
120°
90°
160
180°
0.3
0.2
θ
0.1
θ
360°
0
Ambient Temperature (°C)
Average Power Dissipation (W)
140
Average On-State Current (A)
0.5
Resistive loads
0
0.1
0.2
0.4
0.3
140
θ
120
360°
Resistive loads
Natural convection
100
80
60
40
20
0
0.5
θ
θ = 30° 60° 90° 120° 180°
0
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
0.5
Average Power Dissipation (W)
Ambient Temperature (°C)
0.4
180°
120°
90°
60°
0.4
θ = 30°
270°
180°
120°
90°
DC
60°
0.3
0.2
θ
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
0.5
160
Ambient Temperature (°C)
Average Power Dissipation (W)
0.5
Resistive,
inductive loads
θ
Natural convection
°
360°
θ = 30 60°
90°
120°
180°
270°
DC
140
120
100
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Page 4 of 6
Preliminary
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
160
Typical Example
Tj = 125°C
RGK=1kΩ
140
120
100
80
60
40
20
0 0
10
101
102
103
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
VD=12V
RGK=1kΩ
Holding Current (mA)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
102
101
Typical Distribution
100
Typical Example
10−1
–40
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
RGK = 1kΩ
Typical Example
0
40
80
120
160
Junction Temperature (°C)
× 100 (%)
160
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
CR03AM-16A
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
Gate Trigger Current (μA)
Typical Example
Ta = 25°C
103
102
101 1
10
102
103
Gate Current Pulse Width (μs)
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
Page 5 of 6
CR03AM-16A
Preliminary
Package dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Ordering Information
Orderable Part Number
CR03AM-16A#B00
CR03AM-16A-B#B00
CR03AM-16A-A6#B00
CR03AM-16A-TB#B00
CR03AM-16A-BTB#B00
Packing
Bag
Bag
Bag
Adhesive Tape
Adhesive Tape
Quantity
500 pcs.
500 pcs.
500 pcs.
2000 pcs.
2000 pcs.
Remark
Straight type
Straight type, IGT item : B
A6 Lead form
A8 Lead form
A8 Lead form, IGT item : B
Note : Please confirm the specification about the shipping in detail.
R07DS0987EJ0200 Rev.2.00
Jun 14, 2013
Page 6 of 6
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