MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Features MAGX-000035-015000 (Flanged) GaN on SiC Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Package (Flanged: Cu/W, Flangeless: Cu) RoHS* Compliant +50V Typical Operation MTTF = 600 years (TJ < 200°C) Primary Applications Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX) Air Traffic Control Radar - Commercial Weather Radar - Commercial Military Radar - Military Public Radio Industrial, Scientific and Medical SATCOM Instrumentation Description The MAGX-000035-01500X is a gold-metalized unmatched Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX-000035-01500X is constructed using a thermally enhanced flanged (Cu/W) or flangeless (Cu) ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. 1 MAGX-000035-01500S (Flangeless) Ordering Information Part Number Description MAGX-000035-015000 Flanged, Bulk Packaging MAGX-000035-01500S Flangeless, Bulk Packaging MAGX-L20035-015000 Sample Board (1.2 - 1.4 GHz, Flanged) MAGX-L20035-01500S Sample Board (1.2 - 1.4 GHz, Flangeless) * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Electrical Specifications1: Freq. = 1.2 - 1.4 GHz, TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units RF Functional Tests: VDD = 50 V, IDQ = 15 mA, 1 ms Pulse, 10% Duty Output Power PIN= 0.5 W POUT 15.0 17.7 - W Power Gain PIN= 0.5 W GP 14.8 15.5 - dB Drain Efficiency PIN= 0.5 W ηD 55 63 - % Droop PIN= 0.5 W Droop - 0.1 0.4 dB Load Mismatch Stability PIN= 0.5 W VSWR-S - 5:1 - - Load Mismatch Tolerance PIN= 0.5 W VSWR-T - 10:1 - - Electrical Characteristics: TA = 25°C Parameter Test Conditions Symbol Min. Typ. Max. Units IDS - - 750 µA VGS (TH) -5 -3 -2 V DC Characteristics Drain-Source Leakage Current VGS = -8 V, VDS = 175 V Gate Threshold Voltage VDS = 5 V, ID = 2 mA Forward Transconductance VDS = 5 V, ID = 500 mA GM 0.35 - - S Input Capacitance VDS = 0 V, VGS = -8 V, F = 1 MHz CISS - 4.4 - pF Output Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz COSS - 1.9 - pF Reverse Transfer Capacitance VDS = 50 V, VGS = -8 V, F = 1 MHz CRSS - 0.2 - pF Dynamic Characteristics Correct Device Sequencing Turning the device ON 1. Set VGS to the pinch-off (VP), typically -5 V. 2. Turn on VDS to nominal voltage (+50V). 3. Increase VGS until the IDS current is reached. 4. Apply RF power to desired level. Turning the device OFF 1. Turn the RF power off. 2. Decrease VGS down to VP. 3. Decrease VDS down to 0 V. 4. Turn off VGS. 2 1. Electrical Specifications measured in MACOM RF evaluation board. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Absolute Maximum Ratings2,3,4 2. 3. 4. 5. Parameter Absolute Max. Input Power PIN (nominal) + 3 dB Drain Supply Voltage, VDD +65 V Gate Supply Voltage, VGG -8 V to 0 V Supply Current, IDD 800 mA Power Dissipation (PAVG), Pulsed @ 85°C 10.3 W MTTF (TJ<200°C) 600 years Junction Temperature5 200°C Operating Temperature -40°C to +95°C Storage Temperature -65°C to +150°C Mounting Temperature See solder reflow profile ESD Min. - Charged Device Model (CDM) 150 V ESD Min. - Human Body Model (HBM) 500 V Operation of this device above any one of these parameters may cause permanent damage. Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. For saturated performance it is recommended that the sum of (3*VDD + abs(VGG)) <175 V. Junction Temperature (TJ) = TC + ӨJC * ((V * I) - (POUT - PIN)) Typical transient thermal resistances: 1 ms pulse, 10% duty cycle, ӨJC = 5.0°C/W For TC = 85°C, TJ = 132°C @ 50 V, 520 mA-pk, POUT = 17.0 W, PIN = 0.5 W 3 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Test Fixture Assembly (1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA) Test Fixture Impedances F (GHz) ZIF (Ω) ZOF (Ω) 1.2 1.4 + j3.5 2.5 + j3.5 1.3 1.3 + j3.8 2.7 + j3.9 1.4 1.8 + j4.0 3.1 + j4.2 Parts List 4 Reference Designator Part Vendor C4 C15 C2 C16 C1, C10 C8 C13 C14 C17 C3, C6, C7, C9, C11, C12, R2 0402, 5.1 pF, ±0.1 pF 0603, 6.8 pF, ±0.1 pF 0603, 82 pF, ±10% 0603, 100 pF, ±10% 0402, 1000 pF, 100 V, 5% 0603, 30 pF, ±10% 0805, 1 µF, 100 V, ±20% 0402, 12 pF, ±10% 100 µF, 160 V, Electrolytic Capacitor Do Not Populate ATC ATC ATC ATC ATC ATC ATC ATC Panasonic - R3 L1, R1 R4 R5 L3, L6 L2, R6 J1, J2 240 Ω, 0603, 5% 1.0 Ω, 0402, 5% 1.0 Ω, 1206, 5% 10 Ω, 0402, 5% 0402, 3.9 nH, 2% 0402, 0.0 Ω Resistor SMA Connector Panasonic Panasonic Panasonic Panasonic Coilcraft Panasonic Tyco Electronics Contact factory for Gerber file or additional circuit information. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Application Section Typical Performance Curves 1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA, TA = 25°C Output Power and Gain Vs. Input Power Drain Efficiency Vs. Output Power 5 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Outline Drawing MAGX-000035-015000 (Flanged) 6 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-015000 MAGX-000035-01500S GaN on SiC HEMT Pulsed Power Transistor 15 W, DC - 3.5 GHz Rev. V1 Outline Drawing MAGX-000035-01500S (Flangeless) 7 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298