Diodes BS250F Sot23 p-channel enhancement mode vertical dmos fet Datasheet

SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
BS250F
ISSUE 3 - JANUARY 1996
S
D
G
PARTMARKING DETAIL – MX
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
VALUE
UNIT
-45
V
Continuous Drain Current at Tamb=25°C
Pulsed Drain Current
ID
-90
mA
IDM
-1.6
A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
-45
Gate-Source Threshold
Voltage
VGS(th)
-1
Gate-Body Leakage
-70
V
ID=-100µ A, VGS=0V
-3.5
V
ID =-1mA, VDS= VGS
IGSS
-20
nA
VGS=-15V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
-0.5. µ A
VDS=-25V, VGS=0V
Static Drain-Source On-State
Resistance (1)
RDS(on)
9
14
Ω
VGS=-10V,ID=-200mA
Forward Transconductance
(1)(2)
gfs
90
mS
VDS=-10V,ID=-200mA
Input Capacitance (2)
Ciss
25
pF
VDS=-10V, VGS=0V,
f=1MHz
Turn-On Delay Time (2)(3)
td(on)
10
ns
Rise Time (2)(3)
tr
10
ns
Turn-Off Delay Time (2)(3)
td(off)
10
ns
Fall Time (2)(3)
tf
10
ns
VDD ≈ -25V, ID=-200mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
3 - 55
BS250F
BS250F
TYPICAL CHARACTERISTICS
-14V
-12V
-10V
-0.6
-9V
-8V
-0.4
-7V
-6V
-5V
-0.2
-4V
-14V
-0.8
-12V
-0.6
-10V
-0.4
-9V
-8V
-7V
-0.2
0
-20
-30
-40
0
-50
VDS - Drain Source Voltage (Volts)
ID=
-400mA
-4
-2
-200mA
0
-100mA
-4
-6
-8
-10
ID(On)-On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
-8
-2
100
80
Note:VDS=-10V
60
40
20
-8
-10
-0.6
-0.4
-0.2
0
-8
-10
VGS-Gate Source Voltage (Volts)
Note:VGS=0V
50
f=1MHz
40
Ciss
30
20
Coss
10
Transfer Characteristics
0
-10
-20
-30
-40
-50
-60
-70
-6V
-7V
-10V
-15V
10
-20V
-100
Normalised RDS(on) and VGS(th)
VGS=-5V
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
2.4
Capacitance v drain-source voltage
DS
1.8
1.6
e
eR
rc
ou
S
ain
1.4
1.2
0.8
0.6
eR
nc
ta
sis
VGS=VDS
Dr
ID=-1mA
Gate Thres
hold Voltage
VGS(TH)
1.0
-40 -20
0
20 40 60 80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 56
-4
-5
-6
-7
-8
-9
-10
Note:ID=- 0.2A
0
-2
VDS=
-20V -40V -60V
-4
-6
-8
-10
-12
-14
-16
0.5
1.0
Gate charge v gate-source voltage
n)
(o
2.0
-3
Q-Gate Charge (nC)
VGS=-10V
ID=0.37A
2.2
-2
2
1
0
VDS-Drain Source Voltage (Volts)
2.6
100
0
Transconductance v gate-source voltage
Crss
-6
20
VGS-Gate Source Voltage (Volts)
0
-4
40
0 -1
Transconductance v drain current
VDS=-10V
-2
Note:VDS=-10V
60
ID- Drain Current (Amps)
-0.8
0
80
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
60
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)
-6
-1.0
VGS-Gate Source Voltage (Volts)
-10
-4
Saturation Characteristics
-10
0
100
VDS - Drain Source Voltage (Volts)
Output Characteristics
-6
-2
C-Capacitance (pF)
-10
120
0
0
0
1
-6V
-5V
-4.5V
120
gfs-Transconductance (mS)
-16V
-0.8
ID - Drain Current (Amps)
ID - Drain Current (Amps)
-1.0
VGS=
-16V
-1.0
VGS-Gate Source Voltage (Volts)
VGS=-20V
gfs-Transconductance (mS)
-1.2
TYPICAL CHARACTERISTICS
3 - 57
1.5
BS250F
BS250F
TYPICAL CHARACTERISTICS
-14V
-12V
-10V
-0.6
-9V
-8V
-0.4
-7V
-6V
-5V
-0.2
-4V
-14V
-0.8
-12V
-0.6
-10V
-0.4
-9V
-8V
-7V
-0.2
0
-20
-30
-40
0
-50
VDS - Drain Source Voltage (Volts)
ID=
-400mA
-4
-2
-200mA
0
-100mA
-4
-6
-8
-10
ID(On)-On-State Drain Current (Amps)
VDS-Drain Source Voltage (Volts)
-8
-2
100
80
Note:VDS=-10V
60
40
20
-8
-10
-0.6
-0.4
-0.2
0
-8
-10
VGS-Gate Source Voltage (Volts)
Note:VGS=0V
50
f=1MHz
40
Ciss
30
20
Coss
10
Transfer Characteristics
0
-10
-20
-30
-40
-50
-60
-70
-6V
-7V
-10V
-15V
10
-20V
-100
Normalised RDS(on) and VGS(th)
VGS=-5V
-1000
ID-Drain Current (mA)
On-resistance vs Drain Current
2.4
Capacitance v drain-source voltage
DS
1.8
1.6
e
eR
rc
ou
S
ain
1.4
1.2
0.8
0.6
eR
nc
ta
sis
VGS=VDS
Dr
ID=-1mA
Gate Thres
hold Voltage
VGS(TH)
1.0
-40 -20
0
20 40 60 80 100 120 140 160 180
Junction Temperature (°C)
Normalised RDS(on) and VGS(th) vs Temperature
3 - 56
-4
-5
-6
-7
-8
-9
-10
Note:ID=- 0.2A
0
-2
VDS=
-20V -40V -60V
-4
-6
-8
-10
-12
-14
-16
0.5
1.0
Gate charge v gate-source voltage
n)
(o
2.0
-3
Q-Gate Charge (nC)
VGS=-10V
ID=0.37A
2.2
-2
2
1
0
VDS-Drain Source Voltage (Volts)
2.6
100
0
Transconductance v gate-source voltage
Crss
-6
20
VGS-Gate Source Voltage (Volts)
0
-4
40
0 -1
Transconductance v drain current
VDS=-10V
-2
Note:VDS=-10V
60
ID- Drain Current (Amps)
-0.8
0
80
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
60
Voltage Saturation Characteristics
RDS(on)-Drain Source On Resistance (Ω)
-6
-1.0
VGS-Gate Source Voltage (Volts)
-10
-4
Saturation Characteristics
-10
0
100
VDS - Drain Source Voltage (Volts)
Output Characteristics
-6
-2
C-Capacitance (pF)
-10
120
0
0
0
1
-6V
-5V
-4.5V
120
gfs-Transconductance (mS)
-16V
-0.8
ID - Drain Current (Amps)
ID - Drain Current (Amps)
-1.0
VGS=
-16V
-1.0
VGS-Gate Source Voltage (Volts)
VGS=-20V
gfs-Transconductance (mS)
-1.2
TYPICAL CHARACTERISTICS
3 - 57
1.5
Similar pages