TSC BZX55-C39 500mw zener diode Datasheet

BZX55C SERIES
Pb
500mW Zener Diode
RoHS
COMPLIANCE
DO-35
Features
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—
—
Fast switching speed
General purpose rectification
Silicon epitaxial planar construction
Mechanical Data
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—
—
—
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Case: DO-35
Leads:Solderableper MIL-STD-202,
Method 208
Polarity: Cathode band
Marking: Type number
Weight: 0.13 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 OC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Forward Voltage
@ IF = 100mA
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air (Note 2)
Operating and Storage Temperature Range
Symbol
VF
Pd
RθJA
TJ, TSTG
Value
1.0
500
0.3
-65 to + 175
Units
V
mW
K /mW
O
C
Notes: 1. Valid Provided that Lead are kept at ambient temperature at a distance of 8mm from case.
2. Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Version: A07
RATINGS AND CHARACTERISTIC CURVES (BZX55C SERIES)
CHANGES IN THE POWER DISSIPATION DUE TO THE
AMBIENT TEMPERATURE
LEAD TEMPERATURE. (0C)
AMBIENT TEMPERATURE
Version: A07
ELECTRICAL CHARACTERISTICS (TA=25OC
Device
Type
unless otherwise noted)
Maximum Typical
Nominal Zener Voltage
Maximum Reverse Regulator Temp.
Maximum Zener
IZT
Vz at Izt
Current
Impedance
Current Coefficient
ZZK @ IZK
ZZT @ IZT
IR VR(suffix B)
IzM
% / OC
Min (V) Max (V) mA
Ohms Ohms
mA
uA
V
mA
BZX55-C2V2
2.09
2.31
5.0
85
600
1.0
50
1.0
165.0
-0.070
BZX55-C2V4
2.28
2.56
5.0
85
600
1.0
50
1.0
150.0
-0.070
BZX55-C2V7
2.5
2.9
5.0
85
600
1.0
10
1.0
135.0
-0.070
BZX55-C3V0
2.8
3.2
5.0
85
600
1.0
4.0
1.0
125.0
-0.070
BZX55-C3V3
3.1
3.5
5.0
85
600
1.0
2.0
1.0
115.0
-0.065
BZX55-C3V6
3.4
3.8
5.0
85
600
1.0
2.0
1.0
105.0
-0.060
BZX55-C3V9
3.7
4.1
5.0
85
600
1.0
2.0
1.0
95.0
-0.050
BZX55-C4V3
4.0
4.6
5.0
75
600
1.0
1.0
1.0
90.0
-0.025
BZX55-C4V7
4.4
5.0
5.0
60
600
1.0
0.5
1.0
85.0
-0.010
BZX55-C5V1
4.8
5.4
5.0
35
550
1.0
0.1
1.0
80.0
+0.015
BXZ55-C5V6
5.2
6.0
5.0
25
450
1.0
0.1
1.0
70.0
+0.025
BZX55-C6V2
5.8
6.6
5.0
10
200
1.0
0.1
2.0
64.0
+0.035
BZX55-C6V8
6.4
7.2
5.0
8
150
1.0
0.1
3.0
58.0
+0.045
BZX55-C7V5
7.0
7.9
5.0
7
50
1.0
0.1
5.0
53.0
+0.050
BZX55-C8V2
7.7
8.7
5.0
7
50
1.0
0.1
6.0
47.0
+0.050
BZX55-C9V1
8.5
9.6
5.0
10
50
1.0
0.1
7.0
43.0
+0.060
BZX55-C10
9.4
10.6
5.0
15
70
1.0
0.1
7.5
40.0
+0.070
BZX55-C11
10.4
11.6
5.0
20
70
1.0
0.1
8.5
36.0
+0.070
BZX55-C12
11.4
12.7
5.0
20
90
1.0
0.1
9.0
32.0
+0.070
BZX55-C13
12.4
14.1
5.0
26
110
1.0
0.1
10
29.0
+0.070
BZX55-C15
13.8
15.6
5.0
30
110
1.0
0.1
11
27.0
+0.070
BZX55-C16
15.3
17.1
5.0
40
170
1.0
0.1
12
24.0
+0.070
BZX55-C18
16.8
19.1
5.0
50
170
1.0
0.1
14
21.0
+0.070
BZX55-C20
18.8
21.2
5.0
55
220
1.0
0.1
15
20.0
+0.070
BZX55-C22
20.8
23.3
5.0
55
220
1.0
0.1
17
18.0
+0.070
BZX55-C24
22.8
25.6
5.0
80
220
1.0
0.1
18
16.0
+0.080
BZX55-C27
25.1
28.9
5.0
80
220
1.0
0.1
20
14.0
+0.080
BZX55-C30
28
32
5.0
80
220
1.0
0.1
22
13.0
+0.080
BZX55-C33
31
35
5.0
80
220
1.0
0.1
24
12.0
+0.080
BZX55-C36
34
38
5.0
80
220
1.0
0.1
27
11.0
+0.080
BZX55-C39
37
41
2.5
90
500
1.0
0.1
30
10.0
+0.080
BZX55-C43
40
46
2.5
90
600
1.0
0.1
33
9.2
+0.080
BZX55-C47
44
50
2.5
110
700
1.0
0.1
36
8.5
+0.080
BZX55-C51
48
54
2.5
125
700
1.0
0.1
39
7.5
+0.080
Notes: 1. Valid provided that device terminals are kept at ambient temperature.
2. Tested with pulses, 300us pulse width, period = 5ms.
3. f = 1KHz.
Version: A07
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