TLP523,TLP523−2,TLP523−4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP523, TLP523−2, TLP523−4 Unit in mm Programmable Controllers DC−Output Module Solid State Relay The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected, phototransistor which has an integral base−emitter resistor to optimize switching speed and elevated temperature characteristics. The TLP523−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP523−4 provide four isolated channels per package. • Current transfer ratio: 500% (min.) (IF = 1 mA) • Isolation voltage: 2500 Vrms (min.) • Collector−emitter voltage: 55 V (min.) • Leakage current: 10μA (max.) (Ta = 85°C) • UL recognized: UL1577, file no. E67349 TOSHIBA 11−5B2 Weight: 0.26 g Pin Configurations (top view) TLP523-2 TLP523 TLP523-4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 TOSHIBA 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector 1, 3, 5, 7 : Anode 2, 4, 6, 8 : Cathode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector 1 11−10C4 Weight: 0.54 g TOSHIBA 11−20A3 Weight: 1.1 g 2007-10-01 TLP523,TLP523−2,TLP523−4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol Detector LED Forward current Forward current derating TLP523 TLP523−2 TLP523−4 Unit IF 60 50 mA ΔIF /°C −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C Pulse forward current IFP 1 (100μs pulse, 100pps) A Reverse voltage VR 5 V Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 0.3 V Collector current IC 150 mA Collector power dissipation (1 circuit) PC 150 100 mW ΔPC /°C −1.5 −1.0 mW /°C Collector power dissipation derating (1 circuit (Ta ≥ 25°C)) Operating temperature range Topr −55~100 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature (10 s) Tsol 260 °C Total power dissipation PT 250 150 mW ΔPT /°C −2.5 −1.5 mW /°C Total power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 1) BVS 2500 (AC, 1min., R.H.≤ 60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 20 mA Topr −25 ― 85 °C Operating temperature range Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP523,TLP523−2,TLP523−4 Electrical Characteristics (Ta = 25°C) LED Characteristic Detector Test Condition Min. Typ. Max. Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V — — 10 μA Capacitance CT V = 0, f = 1 MHz — 30 — pF IC = 1 mA 55 — — V VCE = 24 V — 10 200 nA VCE = 24 V, Ta = 85°C — 0.5 10 μA V = 0, f = 1 MHz — 10 — pF 500 2000 — % IC = 50 mA, IF = 10 mA — — 1 V VS = 0, f = 1 MHz — 0.8 — pF — Ω Collector−emitter breakdown voltage Coupled Symbol V(BR) CEO Collector dark current ICEO Capacitance collector to emitter CCE Current transfer ratio IC / IF Collector−emitter saturation voltage VCE(sat) Capacitance input to output CS Isolation resistance RS IF = 1 mA, VCE = 1 V VS = 500 V, R.H.≤ 60% 5×10 10 10 14 Switching Characteristics (Ta = 25°C) Characteristic Symbol Turn−on time tON Turn−off time tOFF Test Condition VCC = 10 V, RL = 180 Ω IF = 16 mA Min. Typ. Max. Unit — 3 — μs — 80 — μs Switching Time Test Circuit IF IF RL IF VCC t VCE 9V 1V VCE t 3 OFF ON 2007-10-01 TLP523,TLP523−2,TLP523−4 IF – Ta 80 TLP523 60 TLP523 -2, -4 40 20 0 -20 0 20 40 PC – Ta 200 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) 100 60 80 100 TLP523 160 120 TLP523 -2, -4 80 40 0 -20 120 0 IFP – DR 80 100 120 Ta = 25℃ 50 Ta = 25℃ (mA) 30 1000 500 Forward current IF Pulse forward current IFP (mA) 60 IF – VF 100 Pulse width ≤ 100μs 3000 40 Ambient temperature Ta (℃) Ambient temperature Ta (℃) 5000 20 300 100 50 30 10 5 3 1 0.5 0.3 10 3 10-3 10-2 3 3 10 -1 100 3 0.1 0.6 Duty cycle patio DR 0.8 1.0 1.2 Forward voltage VF ΔVF / ΔTa – IF (V) IFP – VFP 500 -2.8 -2.4 -2.0 -1.6 -1.2 -0.8 -0.4 0.1 1.8 1000 Pulse forward current IFP (mA) Forward voltage temperature coefficient ΔVF / ΔTa (mV / ℃) -3.2 1.6 1.4 0.3 1 3 Forward current IF 10 300 100 50 30 10 (mA) Repetitive frequency = 100Hz 3 1 0.6 30 Pulse width ≤ 10μs 5 Ta = 25℃ 1.0 1.4 1.8 Pulse forward voltage 4 2.2 2.6 3 VFP (V) 2007-10-01 TLP523,TLP523−2,TLP523−4 I C – IF 300 I C – IF 300 VCE = 1V Ta = 25°C Ta = 25°C (mA) 100 Sample 1 50 Collector current IC (mA) 100 Collector current IC VCE = 1.2V 30 2 3 10 5 3 50 Sample 1 30 2 3 10 5 3 1 1 0.3 3 10 Forward current IF 1 30 1 0.3 (mA) 10 30 (mA) IC – Ta VCE(sat) – Ta Test condition Test condition A : IC=100mA, IF=10mA A : IF =10mA, VCE=1.2V B : IC=50mA, IF=10mA C : IC=10mA, IF=1mA B : IF =10mA, VCE=1.0V C : IF =2mA, VCE=1.2V D : IC=1mA, IF=0.5mA D : IF =2mA, VCE=1.0V E : IF =1mA, VCE=1.2V 1.6 F : IF =1mA, VCE=1.0V 140 1.4 1.2 Test condition Collector current IC (mA) Collector-emitter saturation voltage VCE (sat) (V) 3 Forward current IF A B 1.0 C 0.8 D Test condition A 120 100 B 80 0.6 60 0.4 40 0.2 20 C D E F 0 -40 -20 0 20 40 Ambient temperature 60 80 0 -40 100 Ta (℃) -20 0 20 40 Ambient temperature 5 60 80 100 Ta (℃) 2007-10-01 TLP523,TLP523−2,TLP523−4 IC – VCE IC – VCE 500 300 PC Max. Sample 1 Ta = 25℃ IF = 10mA 300 2mA 100 100 2 50 (mA) 3 30 PC Max. Collector current IC Collector current IC (mA) 50 10 5 3 1 1mA 30 10 0.5mA 5 3 1 0.5 0.5 0.3 0.3 IF = 1mA Ta = 25℃ 0.1 0.1 1 0.3 10 3 Collector-emitter voltage 0.1 0 30 0.4 0.8 VCE (V) VOUT 90% 10% VOUT t ON OFF (mA) t OFF(IF=1mA) 50 t 10ms※ 100 300 100 10ms※ 1s※ Collector current IC Switching time (μs) 3.2 VCE (V) 1s※ 500 30 2.8 300 t OFF(IF=10mA) 2.4 Safe Operating Area IF RL t 2.0 500 VCC = 10V IF 1.6 Collector-emitter voltage Switching Time Ta = 25℃ 1.2 ON(IF=1mA) 10 50 100ms※ 30 100ms※ DC operating Ta=25℃ 10 5 t 5 Single ※ ON(IF=10mA) 3 nonrepetitive 3 pulse Ta=25℃ 1 30 100 300 1k 3k 1 0.5 10k Load resistance RL (Ω) Ta=60℃ 1 3 Collector-emitter voltage 6 10 30 VCE (V) 2007-10-01 TLP523,TLP523−2,TLP523−4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01