ETC BDY57 Npn silicon transistors diffused mesa Datasheet

BDY57 – BDY58
NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification
High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PTOT
Power Dissipation
TJ
Junction Temperature
TS
Value
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
@ TC = 25°
Storage Temperature
Unit
80
125
120
160
V
V
10
V
25
A
6
A
BDY57
BDY58
175
Watts
BDY57
BDY58
-65 to +200
°C
THERMAL CHARACTERISTICS
Symbol
RthJ-C
Ratings
Thermal Resistance, Junction to Case
BDY57
BDY58
COMSET SEMICONDUCTORS
Value
Unit
1
°C/W
1/3
BDY57 – BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
VCEO(SUS)
Collector-Emitter
Breakdown Voltage (*)
IC=100 mA, IB=0
BDY57
BDY58
80
125
-
-
V
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=1.0 A
BDY57
BDY58
-
0.5
1.4
V
BDY57
120
-
-
V(BR)CBO
Collector-Base Breakdown
Voltage (*)
IC=5.0mA, IE=0
BDY58
160
-
-
V(BR)EBO
Emitter-Base Breakdown
Voltage (*)
IE=5.0 A, IC=0
BDY57
BDY58
-
0.5
1.4
ICBO
Collector-Base Cutoff
Current
VCB=120 V
IE=0 V
BDY57
BDY58
-
0.5
ICER
Collector-Emitter Cutoff
Current
VCE=80 V
RBE=10 Ω
TCASE=100°C
BDY57
BDY58
-
-
10
mA
IEBO
Emitter-Base Cutoff Current I EB
C=0 V
V =10 V
BDY57
BDY58
-
0.25
0.5
mA
20
-
60
-
15
-
10
-
-
VCE=4 V, IC=10 A, TCASE=30°C
BDY57
BDY58
BDY57
BDY58
BDY57
BDY58
VCE=4 V, IC=10 A
h21E
Static Forward Current
transfer ratio (*)
V
VCE=4 V, IC=20 A
V
1.0
mA
0.5
V
fT
Transition Frequency
VCE=15 V, IC=1.0 A, f=10
MHz
BDY57
BDY58
10
30
-
MHz
td + tr
Turn-on time
IC=15 A, IB=1.5 A
BDY57
BDY58
-
0.25
1
µs
COMSET SEMICONDUCTORS
2/3
BDY57 – BDY58
Symbol
ts + tf
Ratings
Test Condition(s)
IC=15 A,
IB1=1.5 A,
IB2=-1.5 A
Turn-off time
BDY57
BDY58
Min Typ Mx Unit
-
1
2
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
MECHANICAL DATA CASE TO-3
DIMENSIONS
A
B
C
D
E
G
H
L
M
N
P
Pin 1 :
Pin 2 :
Case :
mm inches
25,45
1
38,8
1,52
30,09 1,184
17,11
0,67
9,78
0,38
11,09
0,43
8,33
0,32
1,62
0,06
19,43
0,76
1
0,04
4,08
0,16
Base
Collector
Emitter
COMSET SEMICONDUCTORS
3/3
µs
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