AMD AM29LV200BB-70DRI 2 megabit (256 k x 8-bit/128 k x 16-bit) cmos 3.0 volt-only, boot sector flash memory, die revison 1 Datasheet

SUPPLEMENT
Am29LV200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 3.0 Volt-only, Boot Sector Flash Memory, Die Revison 1
DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 2.7 to 3.6 volt read and write operations for
battery-powered applications
■ Manufactured on 0.32 µm process technology
■ High performance
— 60R, 70, 90, 120 ns access time
■ Low power consumption (typical values at
5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 7 mA read current
— 15 mA program/erase current
■ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and
seven 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and
seven 32 Kword sectors (word mode)
— Supports full chip erase
— Sector Protection features:
A hardware method of locking a sector to prevent
any program or erase operations within that
sector
Sectors can be locked in-system or via
programming equipment
Temporary Sector Unprotect feature allows code
changes in previously locked sectors
■ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
■ Top or Bottom boot block configuration
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee
per sector
■ Compatibility with JEDEC standards
— Pinout and software compatible with singlepower supply Flash
— Superior inadvertent write protection
■ Data# Polling and toggle bits
— Provides a software method of detecting program
or erase operation completion
■ Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
— Hardware method to reset the device to reading
array data
■ 20-year data retention at 125°C
■ Tested to datasheet specifications at
temperature
■ Quality and reliability levels equivalent to
standard packaged components
■ 500 µm or 280 µm die thickness shipping options
Publication# 26014
Rev: A Amendment/+2
Issue Date: November 18, 2003
S U P P L E M E N T
GENERAL DESCRIPTION
The Am29LV200B in Known Good Die (KGD) form is a
2 Mbit, 3.0 volt-only Flash memory. AMD defines KGD
as standard product in die form, tested for functionality
and speed. AMD KGD products have the same reliability
and quality as AMD products in packaged form.
Am29LV200B Features
The Am29LV200B is an 2 Mbit, 3 volt-only Flash
memory organized as 262,144 bytes or 131,072 words.
The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. To eliminate bus contention the device has separate chip
enable (CE#), write enable (WE#) and output enable
(OE#) controls.
The device requires only a single 3 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the program
and erase operations. No VPP is required for program
or erase operations. The device can also be programmed in standard EPROM programmers.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase
command sequence. This initiates the Embedded
Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation.
During erase, the device automatically times the erase
pulse widths and verifies proper cell margin.
2
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of
memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the standby
mode. Power consumption is greatly reduced in both
these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within
a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.
Electrical Specifications
Refer to the Am29LV200B data sheet, for full electrical
specifications on the Am29LV200B in KGD form.
Am29LV200B Known Good Die
November 18, 2003
S U P P L E M E N T
PRODUCT SELECTOR GUIDE
Family Part Number
Speed Options
Am29LV200B
Regulated Voltage Range: VCC = 3.0–3.6 V
60R
70R
Full Voltage Range: VCC = 2.7–3.6 V
70
90
120
Max access time, ns (tACC)
60
70
70
90
120
Max CE# access time, ns (tCE)
60
70
70
90
120
Max OE# access time, ns (tOE)
30
30
30
35
50
DIE PHOTOGRAPH
DIE PAD LOCATIONS
9
8
7
6
5
4
3
2
1 43 42 41 40 39 38 37 36 35
10
34
11
33
12
32
AMD logo location
22
13 14 15 16 17 18 19 20 21
November 18, 2003
Am29LV200B Known Good Die
23
24 25 26 27 28 29 30 31
3
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO DIE CENTER)
4
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A–1
VSS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
Not Connected
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Pad Center (mils)
X
Y
–0.90
57.70
–13.00
57.70
–18.90
57.70
–24.80
57.70
–30.70
57.70
–36.50
57.70
–42.40
57.70
–48.30
57.70
–54.20
57.70
–63.60
56.20
–63.60
46.10
–63.60
36.00
–63.30
–54.80
–55.90
–54.80
–50.50
–54.80
–44.70
–54.80
–39.30
–54.80
–33.40
–54.80
–28.00
–54.60
–22.10
–54.80
–16.60
–54.80
–7.10
–58.60
10.20
–58.60
N/A
N/A
28.00
–54.80
33.40
–54.80
39.30
–54.80
44.70
–54.80
50.50
–54.80
55.90
–54.80
63.30
–54.80
63.60
35.80
63.60
45.90
63.60
56.00
54.20
58.60
46.60
57.70
40.70
57.70
34.90
57.70
28.90
57.70
23.10
57.70
17.20
57.70
11.40
57.70
5.40
57.70
Am29LV200B Known Good Die
Pad Center (millimeters)
X
Y
–0.02
1.47
–0.33
1.47
–0.48
1.47
–0.63
1.47
–0.78
1.47
–0.93
1.47
–1.08
1.47
–1.23
1.47
–1.38
1.47
–1.62
1.43
–1.62
1.17
–1.62
0.91
–1.61
–1.39
–1.42
–1.39
–1.28
–1.39
–1.14
–1.39
–1.00
–1.39
–0.85
–1.39
–0.71
–1.39
–0.56
–1.39
–0.42
–1.39
–0.18
–1.49
0.26
–1.49
N/A
N/A
0.71
–1.39
0.85
–1.39
1.00
–1.39
1.14
–1.39
1.28
–1.39
1.42
–1.39
1.61
–1.39
1.62
0.91
1.62
1.17
1.62
1.42
1.38
1.49
1.18
1.47
1.03
1.47
0.89
1.47
0.73
1.47
0.59
1.47
0.44
1.47
0.29
1.47
0.14
1.47
November 18, 2003
S U P P L E M E N T
PAD DESCRIPTION (RELATIVE TO VCC)
Pad
Signal
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
VCC
DQ4
DQ12
DQ5
DQ13
DQ6
DQ14
DQ7
DQ15/A–1
VSS
BYTE#
A16
A15
A14
A13
A12
A11
A10
A9
A8
WE#
RESET#
RY/BY#
Not Connected
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
Pad Center (mils)
X
Y
0.00
0.00
–12.10
0.00
–18.00
0.00
–23.90
0.00
–29.80
0.00
–35.60
0.00
–41.50
0.00
–47.40
0.00
–53.30
0.00
–62.70
–1.50
–62.70
–11.60
–62.70
–21.70
–62.40
–112.50
–55.00
–112.50
–49.60
–112.50
–43.80
–112.50
–38.40
–112.50
–32.50
–112.50
–27.10
–112.30
–21.20
–112.50
–15.70
–112.50
–6.20
–116.30
11.10
–116.30
N/A
N/A
28.90
–112.50
34.30
–112.50
40.20
–112.50
45.60
–112.50
51.40
–112.50
56.80
–112.50
64.20
–112.50
64.50
–21.90
64.50
–11.80
64.50
–1.70
55.10
0.90
47.50
0.00
41.60
0.00
35.80
0.00
29.80
0.00
24.00
0.00
18.10
0.00
12.30
0.00
6.30
0.00
Pad Center (millimeters)
X
Y
0.00
0.00
–0.31
0.00
–0.46
0.00
–0.61
0.00
–0.76
0.00
–0.90
0.00
–1.05
0.00
–1.20
0.00
–1.35
0.00
–1.59
–0.04
–1.59
–0.29
–1.59
–0.55
–1.58
–2.86
–1.40
–2.86
–1.26
–2.86
–1.11
–2.86
–0.98
–2.86
–0.83
–2.86
–0.69
–2.85
–0.54
–2.86
–0.40
–2.86
–0.16
–2.95
0.28
–2.95
N/A
N/A
0.73
–2.86
0.87
–2.86
1.02
–2.86
1.16
–2.86
1.31
–2.86
1.44
–2.86
1.63
–2.86
1.64
–0.56
1.64
–0.30
1.64
–0.04
1.40
0.02
1.21
0.00
1.06
0.00
0.91
0.00
0.76
0.00
0.61
0.00
0.46
0.00
0.31
0.00
0.16
0.00
Note: The coordinates above are relative to the center of pad 1 and can be used to operate wire bonding equipment.
November 18, 2003
Am29LV200B Known Good Die
5
S U P P L E M E N T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29LV200B
T
-60
DP
C
1
DIE REVISION
This number refers to the specific AMD manufacturing process and
product technology reflected in this document. It is entered in the
revision field of AMD standard product nomenclature.
TEMPERATURE RANGE
C
= Commercial (0°C to +70°C)
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
PACKAGE TYPE AND
MINIMUM ORDER QUANTITY
DP
= Waffle Pack, 500 µm thick die
245 die per 5 tray stack
DT
= Surftape™ (Tape and Reel), 500 µm thick die
2500 per 7-inch reel
DW
= Gel-Pak® Wafer Tray (sawn wafer on frame)
500 µm thick die
Call AMD sales office for minimum order quantity
DR
= Surftape™ (Tape and Reel), 280 µm thick die
2500 per 7-inch reel
DF
= Waffle Pack, 280 µm thick die
245 die per 5 tray stack
SPEED OPTION
See Product Selector Guide and Valid Combinations
BOOT CODE SECTOR ARCHITECTURE
T
=
Top sector
B
=
Bottom sector
DEVICE NUMBER/DESCRIPTION
Am29LV200B Known Good Die
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory
3.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Valid Combinations
AM29LV200BT-60R
AM29LV200BB-60R
AM29LV200BT-70,
AM29LV200BB-70
AM29LV200BT-90,
AM29LV200BB-90
DRC, DRI, DFC, DFI
DPC, DPI, DTC,
DTI, DWC, DWI
AM29LV200BT-120,
AM29LV200BB-120
AM29LV200BT-70R
AM29LV200BB-70R
6
DFE, DRE, DPE, DTE
Am29LV200B Known Good Die
November 18, 2003
S U P P L E M E N T
PACKAGING INFORMATION
Surftape Packaging
Direction of Feed
16 mm
Orientation relative to
leading edge of tape
and reel
AMD logo location
Gel-Pak and Waffle Pack Packaging
Orientation relative to
top left corner of
Gel-Pak
and Waffle Pack
cavity plate
AMD logo location
November 18, 2003
Am29LV200B Known Good Die
7
S U P P L E M E N T
PRODUCT TEST FLOW
Figure 1 provides an overview of AMD’s Known Good
Die test flow. For more detailed information, refer to the
Am29LV200B product qualification database. AMD
implements quality assurance procedures throughout
the product test flow. These QA procedures also allow
Wafer Sort 1
Bake
24 hours at 250°C
Wafer Sort 2
Wafer Sort 3
High Temperature
Packaging for Shipment
AMD to produce KGD products without requiring or
implementing burn-in. In addition, an off-line qualification maintenance program (QMP) further guarantees
AMD quality standards are met on Known Good Die
products.
DC Parameters
Functionality
Programmability
Erasability
Data Retention
DC Parameters
Functionality
Programmability
Erasability
DC Parameters
Functionality
Programmability
Erasability
Speed
Incoming Inspection
Wafer Saw
Die Separation
100% Visual Inspection
Die Pack
Shipment
Figure 1.
8
AMD KGD Product Test Flow
Am29LV200B Known Good Die
November 18, 2003
S U P P L E M E N T
PHYSICAL SPECIFICATIONS
DC OPERATING CONDITIONS
Active Die dimensions . x = 3462.6 µm; y = 3277.8 µm
. . . . . . . . . . . . . . . . . . . x = 136.3 mils; y = 129.0 mils
VCC (Supply Voltage) . . . . . . . . . . . . . . 2.7 V to 3.6 V
Scribe width . . . . . . . . . . . . x = 87.4 µm; y = 232.2 µm
. . . . . . . . . . . . . . . . . . . . . x = 3.44 mils; y = 9.03 mils
Step dimensions . . . . . . . . x = 3.56 mm; y = 3.51 mm
. . . . . . . . . . . . . . . . . x = 139.76 mils; y = 138.19 mils
Operating Temperature
Industrial . . . . . . . . . . . . . . . . . . .–40°C to +85°C
Commercial . . . . . . . . . . . . . . . . . . .0°C to +70°C
Extended . . . . . . . . . . . . . . . . . .–55°C to +125°C
MANUFACTURING INFORMATION
Die Thickness. . . . . . . . . . . . .500 µm = 483 +/–51 µm
. . . . . . . . . . . . . . . . . . . . . . . 280 µm = 280 +/–15 µm
Manufacturing . . . . . . . . . . . . . . . . . . . . . . . . . . . FASL
Bond Pad Size . . . . . . . . . . . . . . 115.9 µm x 115.9 µm
. . . . . . . . . . . . . . . . . . . . . . . . . . 4.69 mils x 4.69 mils
Manufacturing ID (Top Boot) . . . . . . . . . . . . . 98488AK
(Bottom Boot) . . . . . . . . . . . . . . . . . . . . . . .98488ABK
Minimum pad pitch . . . . . . . . . . . . . . . . . . . . 137.8 µm
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.43 mils
Preparation for Shipment . . . . . . . . Penang, Malaysia
Pad Area Free of Passivation . . . . . . . . . . 13.99 mils2
Test . . . . . . . . . . . . . . . . . . . . . . . . Penang, Malaysia
Fabrication Process . . . . . . . . . . . . . . . . . . . . CS39S
Die Revision . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pads Per Die . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .43
Bond Pad Metalization . . . . . . . . . . . . . . . . . . . . Al/Cu
. . . . . . . . . . . . . . . . . . . . Minimum thickness: 10500 Å
Die Backside . . . . . . . . . . . . . . . . . . . . . . . . No metal,
may be grounded with Back-grind type finish (optional)
SPECIAL HANDLING INSTRUCTIONS
Processing
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20.3 µm max
Do not expose KGD products to ultraviolet light or
process them at temperatures greater than 250 °C.
Failure to adhere to these handling instructions will
result in irreparable damage to the devices. For best
yield, AMD recommends assembly in a Class 10K
clean room with 30% to 60% relative humidity.
Ink dot diameter . . . . . . . . . . . . . . . . . . . . .15 mils min
Storage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 381 µm min
Store at a maximum temperature of 30°C in a nitrogenpurged cabinet or vacuum-sealed bag. Observe all
Passivation . . . . . . . . . . . . . . . . . . Nitride/SOG/Nitride
. . . . . . . . . . . . . . . . . . . . Minimum thickness: 14700 Å
Ink dot height . . . . . . . . . . . . . . . . . . . . . .0.8 mils max
November 18, 2003
Am29LV200B Known Good Die
9
S U P P L E M E N T
TERMS AND CONDITIONS OF SALE FOR
AMD NON-VOLATILE MEMORY DIE
All transactions relating to unpackaged die under this
agreement shall be subject to AMD’s standard terms
and conditions of sale, or any revisions thereof, which
revisions AMD reserves the right to make at any time
and from time to time. In the event of conflict between
the provisions of AMD’s standard terms and conditions
of sale and this agreement, the terms of this agreement
shall be controlling.
AMD warrants unpackaged die of its manufacture
(“Known Good Die” or “Die”) against defective materials or workmanship for a period of one (1) year from
date of shipment. This warranty does not extend
beyond the first purchaser of said Die. Buyer assumes
full responsibility to ensure compliance with the
appropriate handling, assembly and processing of
Known Good Die (including but not limited to proper
Die preparation, Die attach, wire bonding and related
assembly and test activities), and compliance with all
guidelines set forth in AMD’s specifications for Known
Good Die, and AMD assumes no responsibility for environmental effects on Known Good Die or for any
activity of Buyer or a third party that damages the Die
due to improper use, abuse, negligence, improper
installation, accident, loss, damage in transit, or unauthorized repair or alteration by a person or entity other
than AMD (“Warranty Exclusions”).
The liability of AMD under this warranty is limited, at
AMD’s option, solely to repair the Die, to send replacement Die, or to make an appropriate credit adjustment
or refund in an amount not to exceed the original purchase price actually paid for the Die returned to AMD,
provided that: (a) AMD is promptly notified by Buyer in
writing during the applicable warranty period of any
defect or nonconformity in the Known Good Die; (b)
Buyer obtains authorization from AMD to return the
defective Die; (c) the defective Die is returned to AMD
by Buyer in accordance with AMD’s shipping instructions set forth below; and (d) Buyer shows to AMD’s
satisfaction that such alleged defect or nonconformity
actually exists and was not caused by any of the abovereferenced Warranty Exclusions. Buyer shall ship such
defective Die to AMD via AMD’s carrier, collect. Risk of
loss will transfer to AMD when the defective Die is provided to AMD’s carrier. If Buyer fails to adhere to these
warranty returns guidelines, Buyer shall assume all risk
of loss and shall pay for all freight to AMD’s specified
location. The aforementioned provisions do not extend
the original warranty period of any Known Good Die
that has either been repaired or replaced by AMD.
10
WITHOUT LIMITING THE FOREGOING, EXCEPT TO
THE EXTENT THAT AMD EXPRESSLY WARRANTS
TO BUYER IN A SEPARATE AGREEMENT SIGNED
BY AMD, AMD MAKES NO WARRANTY WITH
RESPECT TO THE DIE’S PROCESSING OF DATE
DATA, AND SHALL HAVE NO LIABILIT Y FOR
DAMAGES OF ANY KIND, UNDER EQUITY, LAW, OR
ANY OTHER THEORY, DUE TO THE FAILURE OF
SUCH KNOWN GOOD DIE TO PROCESS ANY PARTICULAR DATA CONTAINING DATES, INCLUDING
DATES IN AND AFTER THE YEAR 2000, WHETHER
OR NOT AMD RECEIVED NOTICE OF THE POSSIBILITY OF SUCH DAMAGES.
THIS WARRANTY IS EXPRESSED IN LIEU OF ALL
OTHER WARRANTIES, EXPRESSED OR IMPLIED,
INCLUDING THE IMPLIED WARRANTY OF FITNESS
FOR A PARTICULAR PURPOSE, THE IMPLIED
WARRANTY OF MERCHANTABILITY AND OF ALL
OTHER OBLIGATIONS OR LIABILITIES ON AMD’s
PART, AND IT NEITHER ASSUMES NOR AUTHORIZES ANY OTHER PERSON TO ASSUME FOR
AMD ANY OTHER LIABILITIES. THE FOREGOING
CONSTITUTES THE BUYER’S SOLE AND EXCLUSIVE REMEDY FOR THE FURNISHING OF DEFECTIVE OR NON CONFORMING KNOWN GOOD DIE
AND AMD SHALL NOT IN ANY EVENT BE LIABLE
FOR INCREASED MANUFACTURING COSTS,
DOWNTIME COSTS, DAMAGES RELATING TO
BUYER’S PROCUREMENT OF SUBSTITUTE DIE
(i.e., “COST OF COVER”), LOSS OF PROFITS, REVENUES OR GOODWILL, LOSS OF USE OF OR
DAMAGE TO ANY ASSOCIATED EQUIPMENT,
OR ANY OTHER INDIRECT, INCIDENTAL, SPECIAL
OR CONSEQUENTIAL DAMAGES BY REASON OF
THE FACT THAT SUCH KNOWN GOOD DIE SHALL
HAVE BEEN DETERMINED TO BE DEFECTIVE OR
NON CONFORMING.
Buyer agrees that it will make no warranty representations to its customers which exceed those given by
AMD to Buyer unless and until Buyer shall agree to
indemnify AMD in writing for any claims which exceed
AMD’s warranty.
Known Good Die are not designed or authorized for
use as components in life support appliances, devices
or systems where malfunction of the Die can reasonably be expected to result in a personal injury. Buyer’s
use of Known Good Die for use in life support applications is at Buyer’s own risk and Buyer agrees to fully
indemnify AMD for any damages resulting in such use
or sale.
Am29LV200B Known Good Die
November 18, 2003
S U P P L E M E N T
REVISION SUMMARY
Revision A (February 4, 2002)
Ordering Information
Initial release.
Removed extended temperature range.
Revision A+1 (December 9, 2002)
Packaging Information
Global
Added gelpack and waffle pack photo to section.
Added the 60R, 70, 90, and 120 speeds.
Revision A+2 (November 18, 2003)
Valid Combinations
Global
Added package types to table.
Added Extended Temperature and 280 um die thickness shipping option.
Trademarks
Copyright © 2003 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
November 18, 2003
Am29LV200B Known Good Die
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