Fairchild FGH40N120AN 1200v npt igbt Datasheet

IGBT
FGH40N120AN
1200V NPT IGBT
Features
Description
• High speed switching
Employing NPT technology, Fairchild’s AN series of IGBTs provides low conduction and switching losses. The AN series offers
an solution for application such as induction heating (IH), motor
control, general purpose inverters and uninterruptible power
supplies (UPS).
• Low saturation voltage : VCE(sat) = 2.6 V @ IC = 40A
• High input impedance
• RoHS complaint
Applications
Induction Heating, UPS, AC & DC motor controls and general
purpose inverters.
E
C
C
G
G
COLLECTOR
(FLANGE)
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage
VGES
Gate-Emitter Voltage
IC
ICM(1)
PD
Collector Current
@TC = 25°C
Collector Current
@TC = 100°C
Pulsed Collector Current
FGH40N120AN
Units
1200
V
±25
V
64
A
40
A
160
A
Maximum Power Dissipation
@TC = 25°C
417
W
Maximum Power Dissipation
@TC = 100°C
167
W
10
µs
SCWT
Short Circuit Withstand Time,
VCE = 600V, VGE = 15V, TC = 125°C
TJ
Operating Junction Temperature
-55 to +150
°C
TSTG
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 seconds
300
°C
Notes:
(1) Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC(IGBT)
Thermal Resistance, Junction-to-Case
--
0.3
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
©2006 Fairchild Semiconductor Corporation
FGH40N120AN Rev. A2
1
www.fairchildsemi.com
FGH40N120AN 1200V NPT IGBT
July 2008
®
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FGH40N120AN
FGH40N120AN
TO-247
-
-
30
Electrical Characteristics of the IGBT
Symbol
Parameter
TC = 25°C unless otherwise noted
Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES
Collector-Emitter Breakdown Voltage
VGE = 0V, IC = 1mA
1200
--
--
V
BVCES/
∆TJ
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
--
0.6
--
V/°C
ICES
Collector Cut-Off Current
VCE = VCES, VGE = 0V
--
--
1
mA
IGES
G-E Leakage Current
VGE = VGES, VCE = 0V
--
--
±250
nA
IC = 250µA, VCE = VGE
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
3.5
5.5
7.5
V
IC = 40A, VGE = 15V
--
2.6
3.2
V
IC = 40A, VGE = 15V,
TC = 125°C
--
2.9
--
V
IC = 64A, VGE = 15V
--
3.15
--
V
--
3200
--
pF
--
370
--
pF
--
125
--
pF
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
cres
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
--
15
--
ns
tr
Rise Time
--
20
--
ns
td(off)
Turn-Off Delay Time
--
110
--
ns
tf
Fall Time
--
40
80
ns
Eon
Turn-On Switching Loss
--
2.3
3.45
mJ
Eoff
Turn-Off Switching Loss
--
1.1
1.65
mJ
Ets
Total Switching Loss
--
3.4
5.1
mJ
td(on)
Turn-On Delay Time
--
20
--
ns
tr
Rise Time
--
25
--
ns
td(off)
Turn-Off Delay Time
--
120
--
ns
tf
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
--
1.8
--
mJ
Ets
Total Switching Loss
--
4.3
--
mJ
Qg
Total Gate charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600V, IC = 40A,
VGE = 15V
2
FGH40N120AN Rev. A2
--
45
--
ns
--
2.5
--
mJ
--
220
--
nC
--
25
--
nC
--
130
--
nC
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FGH40N120AN 1200V NPT IGBT
Package Marking and Ordering Information
FGH40N120AN 1200V NPT IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
300
Figure 2. Typical Saturation Voltage
Characteristics
160
TC = 25°C
20V
17V
15V
250
Common Emitter
VGE = 15V
o
TC = 25 C
200
Collector Current, IC [A]
Collector Current, IC [A]
120
12V
150
VGE = 10V
100
o
TC = 125 C
80
40
50
0
0
0
2
4
6
8
10
0
2
Collector-Emitter Voltage, VCE [V]
Figure 4. Load Current vs. Frequency
70
Common Emitter
VGE = 15V
V CC = 600V
load Current : peak of square wave
56
4
80A
Load Current [A]
Collector-Emitter Voltage, VCE [V]
6
Collector-Emitter Voltage, VCE [V]
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
5
4
3
40A
2
IC = 20A
42
28
14
Duty cycle : 50%
o
T = 100 C
C
Powe Dissipation = 100W
0
0.1
1
25
50
75
100
125
1
Case Temperature, TC [°C]
Figure 5. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25°C
16
12
8
80A
4
100
1000
Figure 6. Saturation Voltage vs. VGE
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
20
10
Frequency [kHz]
40A
IC = 20A
0
Common Emitter
TC = 125°C
16
12
8
80A
4
40A
IC = 20A
0
0
4
8
12
16
20
0
Gate-Emitter Voltage, VGE [V]
8
12
16
20
Gate-Emitter Voltage, VGE [V]
3
FGH40N120AN Rev. A2
4
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(Continued)
Figure 7. Capacitance Characteristics
6000
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
VGE = 0V, f = 1MHz
TC = 25°C
5000
100
Switching Time [ns]
Capacitance [pF]
Ciss
4000
3000
2000
Coss
1000
tr
Common Emitter
VCC = 600V, VGE = ±15V
td(on)
IC = 40A
Crss
TC = 25°C
TC = 125°C
10
0
1
0
10
10
20
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
50
60
70
Common Emitter
VCC = 600V, VGE = ±15V
TC = 25°C
IC = 40A
td(off)
TC = 125°C
TC = 25°C
10
TC = 125°C
Switching Loss [mJ]
Switching Time [ns]
40
Figure 10. Switching Loss vs. Gate Resistance
Common Emitter
VCC = 600V, VGE = ±15V, IC = 40A
1000
30
Gate Resistance, RG [Ω ]
Collector-Emitter Voltage, VCE [V]
100
tf
Eon
Eoff
1
10
0
10
20
30
40
50
60
70
0
10
20
Gate Resistance, RG [Ω]
Figure 11. Turn-On Characteristics vs.
Collector Current
40
50
60
70
Figure 12. Turn-Off Characteristics vs.
Collector Current
Common Emitter
VGE = ±15V, RG = 5Ω
Common Emitter
VGE = ±15V, RG = 5Ω
100
30
Gate Resistance, RG [Ω]
TC = 25°C
TC = 25°C
tr
TC = 125°C
Switching Time [ns]
Switching Time [ns]
TC = 125°C
td(on)
td(off)
100
tf
10
20
30
40
50
60
70
20
80
40
50
60
70
80
Collector Current, IC [A]
Collector Current, IC [A]
4
FGH40N120AN Rev. A2
30
www.fairchildsemi.com
FGH40N120AN 1200V NPT IGBT
Typical Performance Characteristics
FGH40N120AN 1200V NPT IGBT
Typical Performance Characteristics
(Continued)
Figure 13. Switching Loss vs. Collector Current
Figure 14. Gate Charge Characteristics
16
Common Emitter
VGE = ±15V, RG = 5Ω
TC = 25°C
Switching Loss [mJ]
Eoff
1
0.1
600V
12
10
400V
8
6
4
2
0
20
30
40
50
60
70
80
0
50
100
Collector Current, IC [A]
500
150
200
250
Gate Charge, Qg [nC]
Figure 15. SOA Characteristics
Figure 16. Turn-Off SOA
IC MAX (Pulse)
10µ s
100
100
100µ s
10 I MAX (Continuous)
C
Collector Current, IC [A]
Collector Current, Ic [A]
Vcc = 200V
TC = 25°C
Eon
TC = 125°C
Gate-Emitter Voltage, VGE [V]
10
Common Emitter
RL = 15Ω
14
1ms
10 ms
1
DC Operation
*Notes:
0.1
o
1. TC = 25 C
10
o
2. TJ = 150 C
3. Single Pulse
0.01
Safe Operating Area
o
VGE = 15V, TC = 125 C
1
1
10
100
1000 2000
Collector-Emitter Voltage, VCE [V]
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Figure 17. Transient Thermal Impedance of IGBT
Thermal Response [Zthjc]
1
0.5
0.1
0.2
0.1
0.05
PDM
0.01 0.02
t1
0.01
t2
single pulse
1E-3
1E-5
1E-4
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
5
FGH40N120AN Rev. A2
www.fairchildsemi.com
FGH40N120AN 1200V NPT IGBT
Mechanical Dimensions
TO-247AB (FKS PKG CODE 001)
Dimensions in Millimeters
6
FGH40N120AN Rev. A2
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Rev. I31
7
FGH40N120AN Rev. A2
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FGH40N120AN 1200V NPT IGBT
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