Eudyna FLD5F20NP-E20 1,550nm modulator integrated dfb laser Datasheet

1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
FEATURES
• Modulator Integrated DFB Laser Diode Module
• CW operation of DFB laser section
• Modulation voltage applied only to modulator section
• High speed butterfly package with GPO connection
• Built-in optical isolator, monitor photodiode, thermistor, and
thermo-electric cooler
• Available at C-Band ITU-T grid wavelengths between 1529.55nm
thru 1563.05nm
APPLICATION
This MI DFB laser is intended for long reach applications (≤80km)
at 10Gb/s.
DESCRIPTION
The Modulator Integrated DFB Laser (MI DFB Laser) has an electro-absorption modulator
monolithically integrated with a conventional Distributed Feed-Back (DFB) laser. The modulation
voltage is applied to the modulator section while the laser section operates CW allowing extremely low
wavelength chirping. Extinction ratios of more than 10 dB can be achieved with 2.6 Vp-p modulation.
The MI laser is installed in a butterfly type package. The module incorporates a highly stable optical
coupling system. The module includes an optical isolator, monitor photodiode, thermistor and a
thermo-electric cooler.
ABSOLUTE MAXIMUM RATINGS (Top=25°C, unless otherwise specified)
Rating
Parameter
Symbol
Condition
Storage Temperature
Tstg
Operating Case Temperature
Unit
Min.
Max.
-
-40
+85
Top
-
-20
+70
°C
°C
Optical Output Power
Pf
CW
-
5
mW
Laser Forward Current
IF
CW
-
150
mA
Laser Reverse Voltage
VR
CW
-
2
V
Modulator Forward Voltage
Vm
CW
-5
+1
V
Photodiode Forward Current
-
-
-
1
mA
Photodiode Reverse Voltage
VDR
-
-
10
V
Cooling
Heating
Cooling
Heating
-2.5
-0.9
+2.5
+1.4
-
Tth
ATC Operation
-20
+70
°C
-
260°C
-
10
sec
TEC Voltage
Vc
TEC Current
Ic
Thermistor Temperature
Lead Soldering Time
Edition 1.3
July 2004
1
V
A
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
OPTICAL & ELECTRICAL CHARACTERISTICS (TL= Tset, Tc = 25°C, BOL, unless otherwise specified)
Parameter
Symbol
Peak Wavelength
λp
Threshold Current
Ith
Operating Current
Iop
Forward Voltage
VF
Optical Output Power
(Avg. Power)
Pf
Dispersion Penalty
dP
Test Condition
Min.
Limits
Type
Max.
Note (4)
CW, Vm=Vo
CW, IF=Iop
Note (1)
Unit
nm
-
-
30
mA
40
-
100
mA
-
1.4
2.0
V
-2.0
-
-
dBm
-
-
2
dB
SSR
Note (2)
35
-
-
dB
Wavelength Drift
-
after 20 years
-0.1
-
0.1
nm
Wavelength Stability with
Case Temperature
-
-
-
-
±1.0
pm/°C
Is
Vo
Tc=-20 to +70°C
25
35
-
dB
-
-0.7
-
0
V
Vmod
(Vo-Vmod)≥-3.3V, Rext=10dB
-
-
2.6
V
Rext
IF=Iop, Vm=Vo (at On Level)
Vm=Vo-Vmod (at Off Level)
10
-
-
dB
-
20
25
ps
-
20
25
ps
10
-
-
GHz
-
-
±1.0
dB
Sidemode Suppression Ratio
Optical Isolation
On Level Modulation
Modulator Drive Voltage
Extinction Ratio
Rise Time
Tr
Fall Time
Tf
IF=Iop,Vm=Vo, 20 to 80%
-3dB bandwidth,
Vm=Vo-0.5|Vmod |, IF=Iop
IF=Iop, f=0.1-10GHz,
Vm=Vo-0.5|Vmod |
Cut-off Frequency
S21
In-Band Ripple
∆G
RF Return Loss
S11
f=DC-5GHz, 50Ω Test Set,
Vm=Vo, IF=Iop
8
-
-
dB
RF Return Loss
S11
f=5-10GHz, 50Ω Test Set,
Vm=Vo, IF=Iop
5
-
-
dB
Relative Intensity Noise
RIN
-
-120
dB/Hz
-
1.3
2.5
°C
A
V
9.5
10.0
3.3
10.5
W
kΩ
3,270
3,450
3,630
K
TEC Capacity
TEC Current
TEC Voltage
∆T
ITEC
VTEC
TEC Power Dissipation
Thermal Resistance
PTEC
Rth
Thermistor B Constant (Note 3)
f=10 MHz to 8.5 GHz,
Vm=Vo, IF=Iop, 8% Reflection
PTEC=3.3W, IF=Iop
70-Tset
IF=Iop, ∆T=(70-Tset)[°C]
IF=Iop, ∆T=(70-Tset)[°C]
IF=Iop
-
B
TL=25°C , Tc=+25°C
Note (1) Eudyna Test System
9.95328Gb/s, PRBS=223-1, IF=Iop, Vm=Vo and (Vo-Vmod)
Dispersion=1600ps/nm, Dispersion penalty at
Bit Error Rate = 1.0E-10
Note (2) Eudyna Test System 23
9.95328Gb/s, PRBS=2 -1, IF=Iop, Vm=Vo and (Vo-Vmod)
Note (3) Relation between resistance and temperature (°K) is: Rth (T) = Rth (25°C)*exp[B(1/T-1/298)]
Note (4) Reference Table 1 for Wavelength Table
2
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
Fig. 1 Lasing Spectrum
Relative Intensity (10 dB/div.)
10Gb/s
PRBS=223-1
IF=Iop
Vm=Vo/(Vo-2)
Wavelength (Span=1 nm/div, Res.=0.1nm)
Fig. 2 Output Power & Monitor Current
vs. Forward Current
Output Power, Pf (mW)
Vo=-0.7V
TLD=25°C
3
0.9
Im
0.6
2
Pf
1
0.3
0
0
20
40
60
80
Forward Current, IF (mA)
3
0
100
Monitor Current (mA)
1.2
4
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
Fig. 3 Extinction Ratio vs.
Modulation Applied Voltage
Fig. 4 Cut-off Frequency (S21)
Relative Output (dB)
-5
-10
-15
12
9
6
3
0
-3
-6
-9
-12
0
-20
0
0.5
1.0
1.5
2.0
2.5
5
10
15
20
Frequency, f (GHz)
Modulation Applied Voltage (V)
Fig. 5 RF Return Loss (S11)
Fig. 6 Transmission Characteristics
0
10-4
10-5
-10
Bit Error Rate
Return Loss (dB)
Extinction Ratio (dB)
0
-20
-30
0
5
10
15
20
Frequency, f (GHz)
TLD=25°C,
ILD=90mA, Vm=-0.7V/2.0Vpp
9.95328Gb/s, PRBS=223-1,
Dispersion penalty @BER=10-10
=+0.7 dB: 1600 ps/nm
Back to Back
After 1600 ps/nm
10-6
10-7
10-8
10-9
10-10
10-11
10-12
-23 -22 -21 -20 -19 -18 -17 -16
Received Optical Power (dBm)
4
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
Table 1 Wavelength Table
Part Number
Wavelength (nm)
(TL=Tset)
(in vacuum)
Frequency (THz)
Tolerance (nm)
FLD5F20NP-E60
FLD5F20NP-E59
FLD5F20NP-E58
FLD5F20NP-E57
FLD5F20NP-E56
FLD5F20NP-E55
FLD5F20NP-E54
FLD5F20NP-E53
FLD5F20NP-E52
FLD5F20NP-E51
FLD5F20NP-E50
FLD5F20NP-E49
FLD5F20NP-E48
FLD5F20NP-E47
FLD5F20NP-E46
FLD5F20NP-E45
FLD5F20NP-E44
FLD5F20NP-E43
FLD5F20NP-E42
FLD5F20NP-E41
FLD5F20NP-E40
FLD5F20NP-E39
FLD5F20NP-E38
FLD5F20NP-E37
FLD5F20NP-E36
FLD5F20NP-E35
FLD5F20NP-E34
FLD5F20NP-E33
FLD5F20NP-E32
FLD5F20NP-E31
FLD5F20NP-E30
FLD5F20NP-E29
FLD5F20NP-E28
FLD5F20NP-E27
FLD5F20NP-E26
FLD5F20NP-E25
FLD5F20NP-E24
FLD5F20NP-E23
FLD5F20NP-E22
FLD5F20NP-E21
FLD5F20NP-E20
FLD5F20NP-E19
FLD5F20NP-E18
1529.55
1530.33
1531.12
1531.90
1532.68
1533.47
1534.25
1535.04
1535.82
1536.61
1537.40
1538.19
1538.98
1539.77
1540.56
1541.35
1542.14
1542.94
1543.73
1544.53
1545.32
1546.12
1546.92
1547.72
1548.51
1549.32
1550.12
1550.92
1551.72
1552.52
1553.33
1554.13
1554.94
1555.75
1556.56
1557.36
1558.17
1558.98
1559.79
1560.61
1561.42
1562.23
1563.05
196.00
195.90
195.80
195.70
195.60
195.50
195.40
195.30
195.20
195.10
195.00
194.90
194.80
194.70
194.60
194.50
194.40
194.30
194.20
194.10
194.00
193.90
193.80
193.70
193.60
193.50
193.40
193.30
193.20
193.10
193.00
192.90
192.80
192.70
192.60
192.50
192.40
192.30
192.20
192.10
192.00
191.90
191.80
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
±0.1
5
1,550nm Modulator
Integrated DFB Laser
FLD5F20NP-E
“NP” PACKAGE
UNIT: mm
17.24±0.25
15.24±0.25
7-0.5
2.54±0.20
PIN 7
8.17±0.25
7-0.15±0.05
5.41±0.25
7
4.83±0.20
ø0.9±0.1
1.25
8.89±0.15
12.7±0.25
8.25±0.20
ø5.2±0.25
PIN 1
6
TOP VIEW
5
4
3
TEC
2
1
TH
10KΩ
50Ω
4-ø2.67±0.2
ø4.16
5.08±0.25
10.0±0.25
8
20.83±0.25
22.00±0.25
26.04±0.25
29.97±0.25
*L
25.0±0.5
#
PIN DESIGNATIONS
1
2
3
4
5
6
7
8
Thermistor
Thermistor
LD Anode
Power Monitor Anode
Power Monitor Cathode
Thermoelectirc Cooler (+)
Thermoelectric Cooler (-)
Modulator Anode (-)
Case Ground: LD Cathode
0.5±0.2
PIN 8
5.47±0.2
* Pigtail length (L) and connector type are
specified in the detail (individual) specification.
CONNECTOR
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
CAUTION
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
www.us.eudyna.com
• Do not put this product into the mouth.
Eudyna Devices Europe Ltd.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
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Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
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Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
6
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