Diodes DMN3024SFG-7 30v n-channel enhancement mode mosfet powerdiâ® Datasheet

DMN3024SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI®
V(BR)DSS
Features and Benefits
RDS(ON) max
ID max
TA = 25°C
23mΩ @ VGS = 10V
7.5A
33mΩ @ VGS = 4.5V
6.3 A
•
100% Unclamped Inductive Switch (UIS) test in production
•
•
Low RDS(ON) – ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
•
30V
•
•
•
Description and Applications
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
•
•
•
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
•
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approximate)
POWERDI3333-8
Pin 1
S
S
S
G
D
D
D
D
Top View
Bottom View
1
8
2
7
3
6
4
5
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN3024SFG-7
DMN3024SFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
ADVANCE INFORMATION
Product Summary
N34
N34 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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May 2012
© Diodes Incorporated
ADVANCE INFORMATION
DMN3024SFG
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
t<10s
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
TA = 25°C
TA = 70°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Avalanche Current (Note 7)
Repetitive Avalanche Energy (Note 7)
ID
Value
30
±25
7.5
6.0
ID
10.5
8.5
A
ID
6.3
5.0
A
8.5
7.6
60
9
12
ID
IDM
IAS
EAS
Units
V
V
A
A
A
A
mJ
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Symbol
TA = 25°C
TA = 70°C
Steady state
t<10s
TA = 25°C
TA = 70°C
Steady state
t<10s
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Notes:
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Value
0.9
0.5
145
74
2.2
1.4
58
31
11
-55 to +150
Units
W
°C/W
W
°C/W
°C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7 .UIS in production with L = 0.3mH, TJ = 25°C
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DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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DMN3024SFG
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30
-
-
1
±100
V
μA
nA
VGS = 0V, ID = 250 μA
VDS = 30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS(th)
RDS (ON)
|Yfs|
VSD
1.3
15
24
11
0.69
2.4
23
33
1
V
Static Drain-Source On-Resistance
1.0
-
VDS = VGS, ID = 250μA
VGS = 10V, ID = 10A
VGS = 4.5V, ID = 7.5A
VDS = 5V, ID = 10.0A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
0.4
-
479
97
61
1.1
5.0
10.5
1.8
1.6
2.9
7.9
14.6
3.1
1.6
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge VGS = 4.5V
Total Gate Charge VGS = 10V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 15V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 15V, ID = 10A
VGS = 10V, VDS = 15V,
RG = 3Ω, RL= 1.5Ω,
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
20
30
VGS = 10V
VDS = 5V
25
VGS = 4.5V
20
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
ADVANCE INFORMATION
Electrical Characteristics TA = 25°C unless otherwise specified
VGS = 4.0V
VGS = 3.5V
15
10
5
15
10
VGS = 150°C
VGS = 125°C
VGS = 85°C
5
VGS = 3.0V
VGS = 25°C
VGS = 2.5V
VGS = -55°C
0
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
4
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DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.04
VGS = 3.5V
0.03
VGS = 4.5V
0.02
VGS = 10V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 5A
1.5
VGS = 10V
ID = 10A
1.3
1.1
0.9
0.7
0.5
-50
0.04
VGS = 10V
0.03
TA = 150°C
TA = 125°C
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
30
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
1.7
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
0.06
0.05
0.04
VGS = 4.5V
ID = 5A
0.03
0.02
VGS = 10V
ID = 10A
0.01
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
0
-50
Fig. 5 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
20
2.0
18
1.8
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN3024SFG
1.6
ID = 1mA
1.4
1.2
ID = 250µA
1.0
14
12
TA = 25°C
10
8
6
4
0.8
2
0.6
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
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DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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DMN3024SFG
10
1,000
VGS, GATE-SOURCE VOLTAGE (V)
f = 1MHz
C, CAPACITANCE (pF)
100
Coss
Crss
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
8
4
2
0
30
VDS = 15V
ID = 10A
6
0
2
4
6
8
10
Qg, TOTAL GATE CHARGE (nC)
Fig. 10 Gate-Charge Characteristics
12
100
P(PK), PEAK TRANSIENT POIWER (W)
90
Single Pulse
RθJA = 61° C/W
RθJA(t) = r(t) * RθJA
TJ - TA = P * RθJA(t)
80
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 11 Single Pulse Maximum Power Dissipation
1
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
Ciss
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
RθJA(t) = r(t) * RθJA
RθJA = 54°C/W
Duty Cycle, D = t1/ t2
D = 0.005
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
10
100
1,000
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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May 2012
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DMN3024SFG
ADVANCE INFORMATION
Package Outline Dimensions
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2 2.22 2.32 2.27
E2 1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
A
A3
A1
D
D2
L
(4x)
1
Pin 1 ID
4
b2
(4x)
E
E2
8
Z (4x)
5
e
L1
(3x)
b (8x)
Suggested Pad Layout
X
G
8
Y2
5
G1
Y1
Y
1
4
Y3
X2
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
C
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DMN3024SFG
Document number: DS35439 Rev. 3 - 2
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May 2012
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DMN3024SFG
ADVANCE INFORMATION
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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Copyright © 2012, Diodes Incorporated
www.diodes.com
POWERDI is a registered trademark of Diodes Incorporated
DMN3024SFG
Document number: DS35439 Rev. 3 - 2
7 of 7
www.diodes.com
May 2012
© Diodes Incorporated
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