VISHAY 83765

TCST1230
Vishay Semiconductors
Transmissive Optical Sensor with Phototransistor
Output
Description
This device has a compact construction where the
emittig-light sources and the detectors are located
face-to-face on the same optical axis. The operating
wavelength is 950 nm. The detector consists of a
phototransistor.
Applications
D Position sensor for shaft encoder
D Detection of opaque material such as paper,
IBM cards, magnetic tapes etc.
D Limit switch for mechanical motions in VCR
D Read/ write head position in data storage
15130
equipment
D General purpose – wherever the space is limited
96 11969
Features
D Gap 3 mm
D Package height: 6 mm
D Aperture 0.5 mm
D Plastic polycarbonate housing
D Current Transfer Ratio (CTR) of typical 5%
A
E
C
C
Top view
Order Instruction
Ordering Code
TCST1230
Document Number 83765
Rev. A4, 08–Jun–99
Resolution (mm) / Aperture (mm)
0.4
/
0.5
Remarks
High density packing
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TCST1230
Vishay Semiconductors
Absolute Maximum Ratings
Input (Emitter)
Parameter
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
Test Conditions
tp ≤ 10 mA
Tamb ≤ 25°C
Symbol
VR
IF
IFSM
PV
Tj
Value
6
60
3
100
100
Unit
V
mA
A
mW
°C
Symbol
VCEO
VECO
IC
PV
Tj
Value
70
7
100
150
100
Unit
V
V
mA
mW
°C
Symbol
Ptot
Tamb
Tstg
Tsd
Value
250
–25 to +85
–40 to +100
260
Unit
mW
°C
°C
°C
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test Conditions
Tamb ≤ 25°C
Coupler
Parameter
Total power dissipation
Operation temperature range
Storage temperature range
Soldering temperature
Test Conditions
Tamb ≤ 25°C
1.6 mm from case, t ≤ 5 s
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 60 mA
VR = 0, f = 1 MHz
Symbol
VF
Cj
Min.
Typ.
1.25
50
Max.
1.5
Unit
V
pF
Test Conditions
IC = 1 mA
IE = 10 mA
VCE = 25 V, IF = 0, E = 0
Symbol
VCEO
VECO
ICEO
Min.
70
7
Typ.
Max.
10
100
Unit
V
V
nA
Test Conditions
VCE = 10 V, IF = 20 mA
IF = 20 mA, IC = 0.2 mA
Symbol
IC
VCEsat
Min.
0.5
Typ.
Max.
14
0.4
Unit
mA
V
Output (Detector)
Parameter
Collector emittter voltage
Emitter collector voltage
Collector dark current
Coupler
Parameter
Collector current
Collector emitter
saturation voltage
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Document Number 83765
Rev. A4, 08–Jun–99
TCST1230
Vishay Semiconductors
Switching Characteristics
Parameter
Turn-on time
Turn-off time
Symbol
ton
toff
W
Typ.
15.0
10.0
+5V
IF
IF
0
Test Conditions
IC = 1 mA, VCE = 5 V, RL = 100 ((see figure
g
1))
W
m
m
96 11698
IC = 2 mA; adjusted through
input amplitude
RG = 50
tp
= 0.01
T
tp = 50 s
Unit
s
s
IF
0
t
tp
m
IC
Channel I
50
W
100
W
Channel II
Oscilloscope
RL
1M
y W
CL x 20 pF
100%
90%
95 10890
Figure 1. Test circuit
10%
0
t
tr
ts
td
ton
tp
td
tr
ton (= td + tr)
tf
toff
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 2. Switching times
Document Number 83765
Rev. A4, 08–Jun–99
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3 (7)
TCST1230
Vishay Semiconductors
Typical Characteristics (Tamb = 25_C, unless otherwise specified)
10000
ICEO– Collector Dark Current,
with open Base ( nA )
P tot – Total Power Dissipation ( mW )
400
300
Coupled device
200
Phototransistor
IR-diode
100
VCE=25V
IF=0
1000
100
10
0
1
0
30
60
90
120
150
Tamb – Ambient Temperature ( °C )
95 11088
0
25
Figure 3. Total Power Dissipation vs.
Ambient Temperature
50
100
75
Tamb – Ambient Temperature ( °C )
95 11090
Figure 6. Collector Dark Current vs. Ambient Temperature
10
1000.0
IC – Collector Current ( mA )
I F – Forward Current ( mA )
VCE=5V
100.0
10.0
1.0
0.1
0.1
0.01
0.001
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VF – Forward Voltage ( V )
96 11862
0.1
1
100
10
IF – Forward Current ( mA )
95 11083
Figure 4. Forward Current vs. Forward Voltage
Figure 7. Collector Current vs. Forward Current
2.0
10
VCE=5V
IF=20mA
IC – Collector Current ( mA )
CTR rel – Relative Current Transfer Ratio
1
1.5
1.0
0.5
IF=50mA
1
20mA
10mA
0.1
5mA
2mA
0
–25
95 11089
0.01
0
25
50
75
100
Tamb – Ambient Temperature ( °C )
Figure 5. Relative Current Transfer Ratio vs.
Ambient Temperature
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0.1
95 11084
1
10
100
VCE – Collector Emitter Voltage ( V )
Figure 8. Collector Current vs. Collector Emitter Voltage
Document Number 83765
Rev. A4, 08–Jun–99
TCST1230
Vishay Semiconductors
110
CTR – Current Transfer Ratio ( % )
100
100
I Crel – Relative Collector Current
VCE=5V
10
1
1
100
10
96 12006
IF – Forward Current ( mA )
95 11085
t on / t off – Turn on / Turn off Time ( m s )
Figure 9. Current Transfer Ratio vs. Forward Current
A=0.5mm
80
70
s
60
50
40
30
20
10
0
–0.5 –0.4 –0.3 –0.2 –0.1 –0.0 0.1 0.2 0.3 0.4 0.5
0.1
0.1
0
90
s – Displacement ( mm )
Figure 11. Relative Collector Current vs. Displacement
20
Non Saturated
Operation
VS=5V
RL=100
15
W
10
ton
5
toff
0
0
95 11086
2
4
6
8
10
IC – Collector Current ( mA )
Figure 10. Turn on / off Time vs. Collector Current
Document Number 83765
Rev. A4, 08–Jun–99
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TCST1230
Vishay Semiconductors
Dimensions of TCST1230 in mm
96 12083
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Document Number 83765
Rev. A4, 08–Jun–99
TCST1230
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 83765
Rev. A4, 08–Jun–99
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