TLP626,TLP626-2,TLP626-4 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP626,TLP626-2,TLP626-4 Unit in mm Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA TLP626, −2 and −4 consist of gallium arsenide infrared emitting diodes connected in inverse parallel, optically coupled to a photo−transistor. The TLP626−2 offers two isolated channels in an eight lead plastic DIP, while the TLP626−4 provides four isolated channels in a sixteen plastic DIP. • Collector−emitter voltage: 55V(min.) • Current transfer ratio TOSHIBA Weight: 0.26g Current Transfer Ratio(min.) Classi− fication 11−5B2 Ta = −25~75°C Ta = 25°C Marking Of Classi− fication IF = ±1mA VCE = 0.5V IF = ±0.5mA VCE = 1.5V IF = ±1mA VCE = 0.5V Rank BV 200% 100% 100% BV Standard 100% 50% 50% BV, blank • Isolation voltage: 5000Vrms min. • UL recognized: UL1577, file no.E67349 • BSI approved: BS EN60065: 2002 certificate no.7426 BS EN60950-1: 2002 certificate no.7427 • Note: Application type name for certification test, please use standard product type name, i.e. TOSHIBA TLP626(BV): TLP626 11−10C4 Weight: 0.54g Pin Configuration (top view) TLP626–2 TLP626 TLP626–4 1 4 1 8 1 16 2 3 2 7 2 15 3 6 3 14 4 5 4 13 5 12 6 11 7 10 8 9 1 : Anode Cathode 2 : Cathode Anode 3 : Emitter 4 : Collector 1, 3 : Anode Cathode 2, 4 : Cathode Anode 5, 7 : Emitter 6, 8 : Collector TOSHIBA 11−20A3 Weight: 1.1g 1, 3, 5, 7 : Anode, Cathode 2, 4, 6, 8 : Cathode, Anode 9, 11, 13, 15 : Emitter 10, 12, 14, 16 : Collector 1 2007-10-01 TLP626,TLP626-2,TLP626-4 Absolute Maximum Ratings (Ta = 25°C) Rating Characteristic Symbol TLP626−2 TLP626−4 IF 60 50 mA ΔIF / °C −0.7(Ta ≥ 39°C) −0.5(Ta ≥ 39°C) mA / °C Forward current LED Forward current derating Pulse forward current IFP 1(100μs pulse,100pps) Power dissipation (1 circuit) PD 100 70 mW ΔPD / °C −1.0 −0.7 mW / °C Power dissipation derating (Ta ≥ 25°C, 1 circuit) Junction temperature Detector Unit TLP626 A Tj 125 °C Collector−emitter voltage VCEO 55 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 circuit) PC 150 100 mW Collector power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPC / °C −1.5 −1.0 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Popr −55~100 °C Lead soldering temperature Tsol 260(10s) °C Total package power dissipation (1 circuit) PT 250 150 mW Total package power dissipation derating (Ta ≥ 25°C, 1 circuit) ΔPT / °C −2.5 −1.5 mW / °C Isolation voltage (Note 1) BVS 5000(AC, 1min., RH≤60%) Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal: LED side pins shorted together, and detector side pins shorted together. Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 24 V Forward current IF(RMS) ― 1.6 20 mA Collector current Operating temperature IC ― 1 10 mA Topr −25 ― 75 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 TLP626,TLP626-2,TLP626-4 Individual Electrical Characteristics (Ta = 25°C) LED Characteristic Test Condition Min. Typ. Max. Unit Forward voltage VF IF = ±10mA 1.0 1.15 1.3 V Reverse current IF VF = ±0.7V ― 2.5 20 μA Capacitance CT V = 0, f = 1MHz ― 60 ― pF V(BR)CEO IC = 0.5mA 55 ― ― V V(BR)ECO IE = 0.1mA 7 ― ― V VCE = 24V ― 10 10 nA VCE = 24V, Ta = 85°C ― 2 50 μA V=0, f=1MHz ― 12 ― pF Min. Typ. Max. Unit 100 ― 1200 200 ― 1200 50 ― ― 100 ― ― IC = 0.5mA, IF = ±1mA ― ― 0.4 IC = 1mA, IF = ±1mA ― 0.2 ― ― ― 0.4 VF = ±0.7V, VCE = 24V ― 1 10 μA IC(IF = −1mA) / IC(IF = 1mA) 0.5 ― 2 ― Min. Typ. Max. Unit 50 ― ― 100 ― ― ― 50 ― ― 100 ― Collector−emitter breakdown voltage Emitter−collector Detector Symbol breakdown voltage Collector dark current ICEO Capacitance collector CCE to emitter Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Current transfer ratio Low input CTR IC / IF IC / IF(low) Collector−emitter saturation voltage VCE(sat) Test Condition IF = ±1mA, VCE = 0.5V rank BV IF = ±0.5mA, VCE = 1.5V rank BV rank BV Off−state collector current CTR symmetry *1 IC(off) IC(ratio) % % V Coupled Electrical Characteristics (Ta = −25～75°C) Characteristic Symbol Current transfer ratio Low input CTR *1 IC / IF IC / IF(low) Test Condition IF = 1mA, VCE = 0.5V rank BV IF = 0.5mA, VCE = 1.5V rank BV % % IC1 IF1 I (I = I V = 5 V) IC(ratio) = C2 F F2, CE IC1(IF = IF1, VCE = 5 V) IC2 VCE IF2 3 2007-10-01 TLP626,TLP626-2,TLP626-4 Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition Min. Typ. Max. Unit ― 0.8 ― pF 10 ― Ω 5000 ― ― AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc Min. Typ. Max. Unit ― 8 ― ― 8 ― ― 10 ― ― 8 ― ― 10 ― ― 50 ― ― 300 ― VS = 0, f = 1MHz 10 VS = 500V 5×10 AC, 1 minute Isolation voltage BVS 14 Vrms Switching Characteristics (Ta = 25°C) Characteristic Symbol Rise time tr Fall time tf Turn−on time ton Turn−off time toff Turn−on time tON Storage time ts Turn−off time TOFF Test Condition VCC = 10V, IC = 2mA RL = 100Ω RL = 4.7kΩ (Fig.1) VCC = 5 V, IF = ±1.6mA μs μs Fig. 1 Switching operating conditions IF IF VCC tS RL VCE VCE VCC 4.5V 0.5V tON 4 tOFF 2007-10-01 TLP626,TLP626-2,TLP626-4 PC – Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (RMS) (mA) IF – Ta 100 TLP626 60 TLP626－2, －4 40 120 TLP626－2, －4 80 40 20 0 －20 TLP626 0 20 40 60 Ambient temperature 80 100 0 －20 120 0 20 Ta (°C) 40 Ambient temperature IFP – DR 5000 100 120 1.4 1.6 2.0 2.4 Ta (°C) IF – VF 50 Ta = 25 °C Ta = 25 °C (mA) 30 1000 10 500 Forward current IF Allowable pulse forward current IFP (mA) 80 100 Pulse width ≤ 100 μs 3000 60 300 100 50 30 10 ３ 5 3 1 0.5 0.3 3 10－ 10－2 3 10－1 3 Duty cycle ratio 0.1 0.4 100 3 06 0.8 1.0 Forward voltage DR 1.2 VF (V) IFP – VFP ΔVF / ΔTa – IF 1000 IFP (mA) －2.4 Pulse forward current Forward voltage temperature coefficient ΔVF/ΔTa (mV/°C) －2.8 －2.0 －1.6 －1.2 －0.8 －0.4 0.1 0.3 0.5 1 3 5 Forward current IF 10 30 Pulse width ≦ 10 μs 500 Repetitive 300 Frequency = 100 Hz Ta = 25 °C 100 50 30 10 5 3 1 0 50 (mA) 0.4 0.8 1.2 Pulse forward voltage 5 1.6 VFP (V) 2007-10-01 TLP626,TLP626-2,TLP626-4 IC – VCE IC / IF – IF 4.0 500 Ta = 25 °C IF = 1.0 mA 3.5 300 3.0 (mA) 100 50 Ta = 25 °C Collector current IC Current transfer ratio IC / IF (%) 1000 VCE = 5 V 30 VCE = 1.5 V VCE = 0.5 V 10 0.1 0.3 0.5 1 Forward current IF 3 5 10 (mA) 0.8 mA 2.5 2.0 0.6 mA 1.5 0.5 mA 1.0 0.4 mA 0.5 0.2 mA 0 0.1 0.3 0.5 1 Collector-emitter voltage 3 5 10 VCE (V) IC – IF 50 Ta = 25 °C 30 VCE = 5 V VCE = 1.5 V IC – Ta VCE = 0.5 V 30 VCE = 1.5 V 10 VCE = 0.5 V IF = 2 mA 5 10 2 mA 1 (mA) 5 0.5 Collector current IC Collector current IC (mA) 3 0.3 0.1 1 mA 3 0.5 mA 1 0.5 0.3 0.2 mA 0.05 0.1 0.03 0.05 0.01 0.1 0.3 0.5 1 Forward current IF 3 5 0.03 10 (mA) －20 0 20 40 Ambient temperature 6 60 80 Ta (°C) 100 2007-10-01 TLP626,TLP626-2,TLP626-4 ID – Ta Switching Time – RL 10 1 Ta = 25 °C 3000 I = 1.6 mA F VCC = 5 V VCE = 24 V 10 V 100 500 1 10－ 10 Switching time (μs) Collector dark current ID (ICEO) (μA) 1000 5V －2 300 tOFF 100 50 ts 3 10－ 30 tON 10－4 10 5. 10－5 0 20 40 60 Ambient temperature 80 Ta 100 3 1 120 (°C) 3 5 Load resistance 7 30 10 RL 50 100 (kΩ) 2007-10-01 TLP626,TLP626-2,TLP626-4 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-10-01