Central BD677 Npn silicon power darlington transistor Datasheet

BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BD675 Series
types are NPN Silicon Darlington Power Transistors,
available in the plastic TO-126 package, and are
designed for audio and video output applications.
MARKING: FULL PART NUMBER
TO-126 CASE
BD675
MAXIMUM RATINGS: (TC=25°C) SYMBOL BD675A
Collector-Base Voltage
VCBO
45
Collector-Emitter Voltage
VCEO
45
Emitter-Base Voltage
ICEO
BD683
120
UNITS
V
80
100
120
V
4.0
A
IB
PD
100
mA
40
W
TJ, Tstg
ΘJC
-65 to +150
°C
3.13
°C/W
Power Dissipation
ELECTRICAL
SYMBOL
ICBO
ICBO
BD681
100
5.0
Continuous Base Current
Thermal Resistance
60
BD679
BD679A
80
VEBO
IC
Continuous Collector Current
Operating and Storage
Junction Temperature
BD677
BD677A
60
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VCB=Rated VCBO
VCB=Rated VCBO, TC=100°C
V
MAX
200
UNITS
µA
2.0
mA
IEBO
VCE=½Rated VCEO
VEB=5.0V
BVCEO
IC=50mA (BD675, BD675A)
45
V
BVCEO
IC=50mA (BD677, BD677A)
60
V
BVCEO
IC=50mA (BD679, BD679A)
80
V
BVCEO
IC=50mA (BD681)
100
V
BVCEO
IC=50mA (BD683)
120
VCE(SAT)
IC=1.5A, IB=30mA (Non-A)
IC=2.0A, IB=40mA (A)
VCE=3.0V, IC=1.5A (Non-A)
VCE(SAT)
VBE(ON)
VBE(ON)
hFE
hFE
hfe
VCE=3.0V,
VCE=3.0V,
IC=2.0A (A)
IC=1.5A (Non-A)
VCE=3.0V, IC=2.0A (A)
VCE=3.0V, IC=1.5A, f=1.0MHz
500
µA
2.0
mA
V
2.5
V
2.8
V
2.5
V
2.5
V
750
750
1.0
R1 (14-June 2010)
BD675 SERIES
NPN SILICON
POWER DARLINGTON TRANSISTOR
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Collector
3) Base
MARKING:
FULL PART NUMBER
R1 (14-June 2010)
w w w. c e n t r a l s e m i . c o m
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