ON MKP3V120RL Sidac high voltage bidirectional triggers 1 ampere rms 120 and 240 volt Datasheet

MKP3V120, MKP3V240
Preferred Device
Sidac High Voltage
Bidirectional Triggers
Bidirectional devices designed for direct interface with the AC
power line. Upon reaching the breakover voltage in each direction, the
device switches from a blocking state to a low voltage on−state.
Conduction will continue like a Triac until the main terminal current
drops below the holding current. The plastic axial lead package
provides high pulse current capability at low cost. Glass passivation
insures reliable operation.
Features
•
•
•
•
•
•
•
•
High Pressure Sodium Vapor Lighting
Strobes and Flashers
Ignitors
High Voltage Regulators
Pulse Generators
Used to Trigger Gates of SCR’s and Triacs
Indicates UL Registered − File #E116110
These are Pb−Free Devices*
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SIDACS ( )
1 AMPERE RMS
120 and 240 VOLTS
MT1
MT2
MARKING DIAGRAM
AXIAL LEAD
(No Polarity)
CASE 267
STYLE 2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage
VDRM,
(Sine Wave, 50 to 60 Hz, TJ = − 40 to 125°C) VRRM
MKP3V120
MKP3V240
Value
V
"90
"180
IT(RMS)
"1.0
A
ITSM
"20
A
Operating Junction Temperature Range
TJ
−40 to +125
°C
Storage Temperature Range
Tstg
−40 to +150
°C
On-State RMS Current (TL = 80°C, Lead
Length = 3/8″, All Conduction Angles)
Peak Non−Repetitive Surge Current
(60 Hz One Cycle Sine Wave, Peak Value,
TJ = 125°C)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead
(Lead Length = 3/8″)
Lead Solder Temperature
(Lead Length w 1/16″ from Case, 10 s Max)
ORDERING INFORMATION
Package
Shipping †
MKP3V120
Axial Lead*
500 Units/Box
Device
Max
Unit
MKP3V120G
Axial Lead*
500 Units/Box
RqJL
15
°C/W
MKP3V120RL
Axial Lead*
1500/Tape & Reel
TL
260
°C
MKP3V120RLG
Axial Lead*
1500/Tape & Reel
MKP3V240
Axial Lead*
500 Units/Box
MKP3V240G
Axial Lead*
500 Units/Box
MKP3V240RL
Axial Lead*
1500/Tape & Reel
MKP3V240RLG
Axial Lead*
1500/Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
February, 2006− Rev. 4
A
= Assembly Location
YY, Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
A
MKP
3V120
YYWW G
G
Unit
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MKP3V120/D
MKP3V120, MKP3V240
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
IDRM
−
−
10
mA
110
220
−
−
130
250
OFF CHARACTERISTICS
Repetitive Peak Off−State Current
(50 to 60 Hz Sine Wave)
VDRM = 90 V
VDRM = 180 V
MKP3V120
MKP3V240
ON CHARACTERISTICS
Breakover Voltage, IBO = 200 mA
VBO
V
MKP3V120
MKP3V240
Breakover Current
IBO
−
−
200
mA
Peak On−State Voltage
(ITM = 1 A Peak, Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%)
VTM
−
1.1
1.5
V
Dynamic Holding Current
(Sine Wave, 60 Hz, RL = 100 W)
IH
−
−
100
mA
Switching Resistance
(Sine Wave, 50 to 60 Hz)
RS
0.1
−
−
kW
di/dt
−
120
−
A/ms
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of On−State Current,
Critical Damped Waveform Circuit
(IPK = 130 W, Pulse Width = 10 msec)
Voltage Current Characteristic of SIDAC
(Bidirectional Device)
+ Current
Symbol
Parameter
IDRM
Off State Leakage Current
VDRM
Off State Repetitive Blocking Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
ITM
Peak on State Current
ITM
VTM
Slope = RS
IH
IS
IDRM
VDRM
RS +
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2
VS
I(BO)
+ Voltage
V(BO)
(V (BO) – V S)
(I S – I (BO))
MKP3V120, MKP3V240
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
CURRENT DERATING
TA , MAXIMUM ALLOWABLE AMBIENT
TEMPERATURE (° C)
130
120
α
α = Conduction Angle
TJ Rated = 125°C
110
90
a = 180°
80
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
α = Conduction Angle
TJ Rated = 125°C
120
100
80
a = 180°
60
40
20
0
2.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 1. Maximum Case Temperature
Figure 2. Maximum Ambient Temperature
PAV , MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
I T , INSTANTANEOUS ON−STATE CURRENT (AMPS)
100
α
140
1.0
1.25
25°C
0.8
125°C
a = 180°
1.00
0.6
0.4
α
α = Conduction Angle
TJ Rated = 125°C
0.75
0.3
2.0
0.50
0.2
0.25
0.1
0.8
0.9
1.0
1.1
1.2
1.3
VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
0
Figure 3. Typical Forward Voltage
0.2
0.4
0.6
0.8
IT(AV), AVERAGE ON−STATE CURRENT (AMPS)
Figure 4. Typical Power Dissipation
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3
1.0
MKP3V120, MKP3V240
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
THERMAL CHARACTERISTICS
1.0
ZqJL(t) = RqJL • r(t)
DTJL = Ppk RqJL[r(t)]
tp
TIME
where:
DTJL = the increase in junction temperature above the
lead temperature
r(t) = normalized value of transient thermal resistance at
time, t from this figure. For example,
r(tp) = normalized value of
transient resistance at time tp.
0.5
0.3
0.2
0.1
0.05
LEAD LENGTH = 1/4″
The temperature of the lead should be
measured using a thermocouple placed on the
lead as close as possible to the tie point. The
thermal mass connected to the tie point is
normally large enough so that it will not
significantly respond to heat surges generated
in the diode as a result of pulsed operation
once steady−state conditions are achieved.
Using the measured value of TL, the junction
temperature may be determined by:
0.03
0.02
TJ = TL + DTJL
0.01
0.2
0.5
1.0
2.0
5.0
20
10
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
t, TIME (ms)
Figure 5. Thermal Response
TYPICAL CHARACTERISTICS
225
80
200
IH , HOLDING CURRENT (mA)
250
90
I(BO) , BREAKOVER CURRENT (m A)
100
70
60
50
40
30
20
10
0
−60
175
150
125
100
75
50
25
−40
−20
0
20
40
60
80
120
100
0
−60
140
−40
−20
0
20
40
60
80
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Breakover Current
Figure 7. Typical Holding Current
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4
120 140
MKP3V120, MKP3V240
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 267−05
ISSUE G
K
D
A
1
B
2
K
NOTES:
1. DIMENSIONS AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 267−04 OBSOLETE, NEW STANDARD 267−05.
DIM
A
B
D
K
INCHES
MIN
MAX
0.287
0.374
0.189
0.209
0.047
0.051
1.000
−−−
MILLIMETERS
MIN
MAX
7.30
9.50
4.80
5.30
1.20
1.30
25.40
−−−
STYLE 2:
NO POLARITY
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MKP3V120/D
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