isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 80 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJE702 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current 0.1 A PC Collector Power Dissipation TC=25℃ 40 W Ti Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc Website：www.iscsemi.cn MJE802 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJE802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 30mA 2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB=-40mA 3.0 V VBE(on)-1 Base-Emitter On Voltage IC= 1.5A; VCE= 3V 2.5 V VBE(on)-2 Base-Emitter On Voltage IC= 4A; VCE= -3V 3.0 V ICEO Collector Cutoff Current VCE= 80V; IB= 0 0.1 mA ICBO Collector Cutoff Current VCB= 80V; IE= 0 VCB= 80V; IE= 0;TC= 100℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 2.0 mA hFE-1 DC Current Gain IC= 1.5A ; VCE= 3V 750 hFE-2 DC Current Gain IC= 4A ; VCE= 3V 100 isc Website：www.iscsemi.cn CONDITIONS MIN MAX 80 B UNIT V