AO8804 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8804 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AO8804 is Pbfree (meets ROHS & Sony 259 specifications). VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 14mΩ (VGS = 4.5V) RDS(ON) < 15.5mΩ (VGS = 3.8V) RDS(ON) < 19mΩ (VGS = 2.5V) RDS(ON) < 27mΩ (VGS = 1.8V) ESD Rating: 2000V HBM D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S2 G2 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum 20 Units V ±12 V 30 1.5 W 1.08 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 6.3 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 8 TA=25°C Power Dissipation A D2 D1 TSSOP-8 Top View RθJA RθJL Typ 64 89 53 Max 83 120 70 Units °C/W °C/W °C/W AO8804 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 20 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V 25 BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 14 16 VGS=3.8V, ID=5A 13 15.5 VGS=2.5V, ID=4A 15.4 19 VGS=1.8V, ID=3A 22.2 27 VDS=5V, ID=8A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge A 13.3 IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Coss V 10 VSD Crss 1 V 0.75 11.5 Forward Transconductance IS µA VGS=10V, ID=8A TJ=125°C VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=8A µA 10 VGS=4.5V, ID=5A gFS Units 10 TJ=55°C VGS(th) Static Drain-Source On-Resistance Max V VDS=16V, V GS=0V IDSS RDS(ON) Typ 13 mΩ 36 0.73 S 1 V 2.4 A 1810 pF 232 pF 200 pF 1.6 Ω 17.9 nC 1.5 nC Qgd Gate Drain Charge 4.7 nC tD(on) Turn-On DelayTime 2.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=10V, V DS=10V, R L=1.2Ω, RGEN=3Ω 7.2 ns 49 ns 10.8 ns IF=8A, dI/dt=100A/µs 20.2 IF=8A, dI/dt=100A/µs 8 ns nC 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 4: Feb 2009 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO8804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 10 35 30 2.5V 4.5V 2V VDS=5V 25 30 20 ID(A) ID (A) 25 20 15 15 10 10 125°C VGS=1.5V 5 5 0 25°C 0 0 1 2 3 4 5 0 0.5 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 30 1.6 Normalized On-Resistance RDS(ON) (mΩ) 20 VGS=2.5V 15 VGS=3.8V 10 VGS=4.5V 5 0 5 VGS=4.5V ID=5A VGS=1.8V 25 10 15 VGS=2.5V 1.4 VGS=10V 1.2 VGS=1.8V 1 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 40 1.0E+01 35 1.0E+00 30 125°C ID=5A 1.0E-01 25 20 IS (A) RDS(ON) (mΩ) 2.5 125°C 15 1.0E-02 25°C 1.0E-03 10 25°C 1.0E-04 5 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO8804 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 5 VDS=10V ID=8A 2500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 2000 1500 1000 Coss 500 0 0 4 8 12 16 Crss 0 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 40 RDS(ON) limited 100µs 1ms 10µs 10ms 1.0 1s TJ(Max)=150°C TA=25°C 0.1s DC 1 10 100 20 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=89°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance TJ(Max)=150°C TA=25°C 0 0.001 VDS (Volts) 10 20 10 10s 0.1 0.1 15 30 Power (W) ID (Amps) 100.0 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000