isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD240/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BD240; -60V(Min)- BD240A -80V(Min)- BD240B; -100V(Min)- BD240C ·Complement to Type BD239/A/B/C APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCER VCEO VEBO PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage VALUE BD240 -55 BD240A -70 BD240B -90 BD240C -115 BD240 -45 BD240A -60 BD240B -80 BD240C -100 UNIT V V Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current -0.6 A PC Collector Power Dissipation @ TC=25℃ 30 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 4.17 ℃/W 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor BD240/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BD240 -45 BD240A -60 MAX IC= -30mA; IB= 0 UNIT V BD240B -80 BD240C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A -0.7 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V -1.3 V -0.2 mA -0.3 mA -1.0 mA ICES ICEO Collector Cutoff Current Collector Cutoff Current BD240 VCE= -45V; VBE= 0 BD240A VCE= -60V; VBE= 0 BD240B VCE= -80V; VBE= 0 BD240C VCE= -100V; VBE= 0 BD240/A VCE= -30V; IB= 0 BD240B/C VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -0.2A; VCE= -4V 40 hFE-2 DC Current Gain IC= -1A; VCE= -4V 15 isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark