NTE NTE2511 Silicon complementary transistors high frequency video output for hdtv Datasheet

NTE2511 (NPN) & NTE2512 (PNP)
Silicon Complementary Transistors
High Frequency Video Output for HDTV
Features:
D High Gain Bandwidth Product: fT = 800MHz Typ.
D Low Reverse Transfer Capacitance and Excellent HF Response:
NTE2511: Cre = 2.9pF
NTE2512: Cre = 4.6pF
Applications:
D Very High–Definition CRT Display
D Video Output
D Color TV Chroma Output
D Wide–Band Amp
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V
Collector Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Collector Power Dissipation, PC
TA = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 60V, IE = 0
–
–
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 2V, IC = 0
–
–
1.0
µA
DC Current Gain
hFE
VCE = 10V, IC = 50mA
100
–
320
VCE = 10V, IC = 400mA
20
–
–
VCE = 10V, IC = 100mA
–
800
–
Gain Bandwidth Product
fT
MHz
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Collector Emitter Saturation Voltage
NTE2511
VCE(sat)
Test Conditions
Min
Typ
Max
Unit
–
–
0.6
V
–
–
0.8
V
–
–
1.0
V
IC = 100mA, IB = 10mA
NTE2512
Base Emitter Saturation Voltage
VBE(sat)
IC = 100mA, IB = 10mA
Collector Base Breakdown Voltage
V(BR)CBO IC = 10µA, IE = 0
80
–
–
V
Collector Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, RBE = ∞
60
–
–
V
Emitter Base Breakdown Voltage
V(BR)EBO IE = 100µA, IC = 0
4
–
–
V
–
3.4
–
pF
–
5.2
–
pF
–
2.9
–
pF
–
4.6
–
pF
Output Capacitance
NTE2511
Cob
VCB = 30V, f = 1MHz
NTE2512
Reverse Transfer Capacitance
NTE2511
Cre
VCB = 30V, f = 1MHz
NTE2512
.330 (8.38)
Max
.175
(4.45)
Max
.450
(11.4)
Max
.118 (3.0)
Dia
.655
(16.6)
Max
.030 (.762) Dia
E
C
B
.090 (2.28)
.130 (3.3)
Max
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