EPIGAP EPD-150-0-2.5 Photodiode Datasheet

Photodiode
EPD-150-0-2.5
6/21/2007
Preliminary
rev. 05/07
Wavelength
Type
Technology
Case
VUV
Schottky Contact
GaP
TO-39 + sapphire window
Description
0,
1
± 0,03
chip location
Ø9,14
± 0,1
Ø7,62
4,50
chip location
8,13
± 0,05
9,
90
±
0,45
5,08
Wide bandwidth and high sensitivity from VUV up
to the visible spectrum (150 nm - 550 nm),
mounted in hermetically sealed TO-39 package
with sapphire window
Anode
± 1,0
± 0,05
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
±
2,00
80
0,
13,5
05
0,
sapphire
45,
00°
ELC-80
Applications
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Test сonditions
Parameter
Symbol
Value
Unit
A
4.8
mm²
Temperature coefficient of ID
TC(ID)
7.0
%/K
Operating temperature range
Tamb
-40 to +125
°C
Storage temperature range
Tstg
-40 to +125
°C
ϕ
120
deg.
Typ
Max
Unit
Active area
Acceptance angle at 50% Sλ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
IR = 10 µA
VR
5
Dark current
VR = 5 V
ID
15
Peak sensitivity wavelength
VR = 0 V
λp
440
nm
Responsivity at λP
VR = 0 V
Sλ
0.17
A/W
Sensitivity range at 1%
VR = 0 V
λmin, λmax
Spectral bandwidth at 50%
VR = 0 V
∆λ0.5
Shunt resistance
VR = 10 mV
RSH
Noise equivalent power
λ = 440 nm
Specific detectivity
λ = 440 nm
D*
1.7x10
Junction capacitance
VR = 0 V
CJ
1000
pF
Switching time (RL = 50 Ω)
VR = 5 V
tr , tf
1/60
ns
VR = 0 V
Ee = 1 mW/cm²
IPh
2.5
µA
Breakdown voltage1)
Photo current at λ = 254 nm1,2)
1)
2)
V
40
150
550
180
80
NEP
nm
nm
100
1.3x10
pA
GΩ
-14
W/ Hz
cm ⋅ Hz ⋅ W −1
13
for information only
measured with Hg-LP-VUV/UV-emitter as radiation source
Note: All measurements carried out with EPIGAP equipment
Labeling
Type
Lot N°
RD (typ.) [GΩ]
EPD-150-0-2.5 EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
Quantity
1 of 2
Photodiode
EPD-150-0-2.5
6/21/2007
Preliminary
rev. 05/07
Typical responsivity
EPD-150-0
Responsivity, A/W
0,1
0,01
1E-3
100 150
200 250 300
350 400
450 500 550
600
Wavelength, nm
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
2 of 2
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