TSFF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching to Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 8389 DESCRIPTION TSFF6410 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. in APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high modulation frequencies or high data transmission rate requirements PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) 70 ± 22 870 15 TSFF6410 Note Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSFF6410 Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1 A PV 180 mW Power dissipation Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm, soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81126 Rev. 1.1, 29-Jun-09 For technical questions, contact: [email protected] www.vishay.com 1 TSFF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero 120 200 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 160 140 120 RthJA = 230 K/W 100 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21142 20 30 40 50 60 70 80 0 90 100 Tamb - Ambient Temperature (°C) 21143 Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER Forward voltage Temperature coefficient of VF Reverse current Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs IF = 1 mA TYP. MAX. UNIT VF 1.5 1.8 V VF 2.3 3.0 TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie MIN. 10 µA 135 mW/sr 125 45 70 V mV/K pF IF = 1 A, tp = 100 µs Ie 700 mW/sr IF = 100 mA, tp = 20 ms φe 50 mW IF = 100 mA TKφe - 0.35 %/K ϕ ± 22 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 870 Spectral bandwidth IF = 100 mA Δλ 40 nm Temperature coefficient of λp IF = 100 mA TKλp 0.25 nm/K Rise time IF = 100 mA tr 15 ns Fall time IF = 100 mA tf 15 ns IDC = 70 mA, IAC = 30 mA pp fc 24 MHz d 2.1 mm Cut-off frequency Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81126 Rev. 1.1, 29-Jun-09 TSFF6410 High Speed Infrared Emitting Diode, Vishay Semiconductors 870 nm, GaAlAs Double Hetero BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1.25 Φe rel - Relative Radiant Power Tamb < 50 °C tP/T = 0.01 1000 IF - Forward Current (mA) 0.02 0.05 0.1 0.2 0.5 100 0.01 0.1 1 10 0.75 0.5 0.25 0 780 100 tP - Pulse Duration (ms) 16031 1.0 Fig. 3 - Pulse Forward Current vs. Pulse Duration 980 880 λ - Wavelength (nm) 95 9886 Fig. 6 - Relative Radiant Power vs. Wavelength 0° 10° 20° 100 tP = 100 µs tP/T = 0.001 10 40° 1.0 0.9 50° 0.8 60° 80° 1 0 18873 1 3 2 VF - Forward Voltage (V) 4 Fig. 4 - Forward Current vs. Forward Voltage 0.6 94 8883 0.4 0.2 0 Fig. 7 - Relative Radiant Intensity vs. Angular Displacement 1 1000 0 Φe, Ie - Attenuation (dB) Ie - Radiant Intensity (mW/sr) 70° 0.7 ϕ - Angular Displacement 30° Ie rel - Relative Radiant Intensity IF - Forward Current (mA) 1000 100 10 1 0.1 1 18220 10 100 IF - Forward Current (mA) 1000 Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81126 Rev. 1.1, 29-Jun-09 -1 -2 -3 IFDC = 70 mA IFAC = 30 mA pp -4 -5 101 14256 102 103 104 105 f - Frequency (kHz) Fig. 8 - Attenuation vs. Frequency For technical questions, contact: [email protected] www.vishay.com 3 TSFF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero PACKAGE DIMENSIONS in millimeters Ø 5.8 ± 0.15 C R 2.49 (sphere) (3.5) 34.3 ± 0.55 < 0.7 8.7 ± 0.3 7.7 ± 0.15 A Area not plane + 0.2 0.6 - 0.1 1 min. Ø 5 ± 0.15 0.15 0.5 +- 0.05 0.15 0.5 +- 0.05 technical drawings according to DIN specifications 2.54 nom. Drawing-No.: 6.544-5259.06-4 Issue: 6; 19.05.09 19257 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81126 Rev. 1.1, 29-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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