MJD32C 100V PNP HIGH VOLTAGE TRANSISTOR IN TO252 Features Mechanical Data BVCEO > -100V IC = -3A high Continuous Collector Current ICM = -5A Peak Pulse Current Ideal for Power Switching or Amplification Applications Complementary NPN Type: MJD31C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: TO252 (DPAK) Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 Weight: 0.34 grams (approximate) C TO252 (DPAK) B E Top View Device Schematic Pin Out Configuration Top view Ordering Information (Note 4) Product MJD32C-13 Notes: Compliance AEC-Q101 Marking MJD32C Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information MJD32C = Product Type Marking Code = Manufacturers’ code marking YYWW = Date Code Marking YY = Last Digit of Year (ex: 10 = 2010) WW = Week Code (01 - 53) MJD32C Document number: DS31624 Rev. 6 - 2 1 of 7 www.diodes.com March 2014 © Diodes Incorporated MJD32C Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Pulse Collector Current Continuous Base Current Symbol VCBO VCEO VEBO IC Value -100 -100 -6 -3 Unit V V V A ICM -5 A IB -1 A Value 3.9 2.1 1.6 15 32 59 80 8.4 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 7) (Note 8) (Note 5) (Note 6) (Note 7) (Note 8) PD RθJA RθJL TJ, TSTG W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For a device mounted with the exposed collector pad on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note (5), except mounted on 25mm x 25mm 1oz copper. 7. Same as note (5), except mounted on minimum recommended pad (MRP) layout. 8. Thermal resistance from junction to solder-point (on the exposed collector pad). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MJD32C Document number: DS31624 Rev. 6 - 2 2 of 7 www.diodes.com March 2014 © Diodes Incorporated MJD32C Thermal Characteristics 10 VCE(sat) -IC Collector Current (A) -IC Collector Current (A) 10 Limited DC 1 1s 100ms 10ms 100m 1ms 100µs Single Pulse T amb=25°C 10m 100m 1 10 100 -VCE Collector-Emitter Voltage (V) VCE(sat) Limited 10ms 1ms 0.1 0.01 0.1 60 D=0.5 40 Single Pulse 0 100µ D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Thermal Resistance (°C/W) Thermal Resistance (°C/W) Minimum Copper D=0.2 10 100 6 D=0.5 4 D=0.2 D=0.1 2 D=0.05 Single Pulse 0 100µ 1m 10m 100m T CASE=25°C 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Document number: DS31624 Rev. 6 - 2 1 8 Pulse Width (s) MJD32C Single Pulse T CASE=25°C Safe Operating Area T AMB=25°C 20 100s -VCE Collector-Emitter Voltage (V) Safe Operating Area 80 DC 100ms 1 3 of 7 www.diodes.com Transient Thermal Impedance March 2014 © Diodes Incorporated MJD32C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Emitter Breakdown Voltage (Note 10) Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Saturation Voltage (Note 10) Base-Emitter Turn-On Voltage (Note 10) Symbol BVCEO ICEO ICES IEBO VCE(sat) VBE(on) DC Current Gain (Note 10) hFE Current Signal Current Gain Current Gain-Bandwidth Product Hfe fT Min -100 25 10 20 3.0 Typ Max -1 -1 -1 -1.2 -1.8 50 Unit V μA μA μA V V MHz Test Condition IC = -30mA, IB = 0 VCB = -60V, IB = 0 VCE = -100V, VEB = 0 VEB = -5V, IC = 0 IC = -3.0A, IB = -375mA IC = -3A, VCE = -4V VCE = -4V, IC = -1A VCE = -4V, IC = -3A VCE = -10V, IC = -0.5A, f = 1KHz IC = -500mA, VCE = -10V, f = 1MHz 10. Measured under pulsed conditions. Pulse width 300μs. Duty cycle 2%. Notes: Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 1,000 1 IC/IB = 8 -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = -4V TA = 150°C T A = 85°C T A = 25°C 100 TA = -55°C 10 VCE = -4V 1.0 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C T A = 150°C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 3 Typical Base-Emitter Turn-On Voltage vs. Collector Current MJD32C Document number: DS31624 Rev. 6 - 2 TA = 25°C TA = -55°C 0.01 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 2 Typical Collector-Emitter Saturation Voltage vs. Collector Current -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 1 Typical DC Current Gain vs. Collector Current 1.2 T A = 85°C 0.001 1 1 1.4 TA = 150°C 0.1 1.2 IC/IB = 8 1.0 0.8 TA = -55°C 0.6 TA = 25°C TA = 85°C 0.4 T A = 150°C 0.2 4 of 7 www.diodes.com 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Figure 4 Typical Base-Emitter Saturation Voltage vs. Collector Current March 2014 © Diodes Incorporated MJD32C 1,000 CAPACITANCE (pF) f = 1MHz Cibo 100 Cobo 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Figure 5 Typical Capacitance Characteristics MJD32C Document number: DS31624 Rev. 6 - 2 5 of 7 www.diodes.com March 2014 © Diodes Incorporated MJD32C Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E A 3 b 2 c ° 1 ± ° 7 3 L 4 L H 2 A D x 3 b e ︵ ︶ x 2 2 b ︵ ︶ 8 0 5 . 0 e n a l P e g u a G e n a l P g n i t a e S 1 D 1 E L 1 A a F E R 4 7 . 2 TO252 Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 e 2.286 E 6.45 6.70 6.58 E1 4.32 H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 1 X 1 Y 2 Y Dimensions C X X1 Y Y1 Y2 C Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y X Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. MJD32C Document number: DS31624 Rev. 6 - 2 6 of 7 www.diodes.com March 2014 © Diodes Incorporated MJD32C IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2014, Diodes Incorporated www.diodes.com MJD32C Document number: DS31624 Rev. 6 - 2 7 of 7 www.diodes.com March 2014 © Diodes Incorporated