Power Transistors 2SC3743 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ● 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 900 V VCES 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage VEBO 7 V Peak collector current ICP 5 A Collector current IC 3 A Base current IB 1 A Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 ■ Electrical Characteristics 2.7±0.2 4.0 ● High-speed switching Wide area of safe operation (ASO) with high breakdown voltage Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 50 µA 50 µA ICBO Emitter cutoff current IEBO VEB = 7V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 hFE1 VCE = 5V, IC = 0.1A 6 hFE2 VCE = 5V, IC = 0.8A 6 Collector to emitter saturation voltage VCE(sat) IC = 0.8A, IB = 0.16A 0.6 V Base to emitter saturation voltage VBE(sat) IC = 0.8A, IB = 0.16A 1.2 V Transition frequency fT VCE = 5V, IC = 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 900V, IE = 0 max Collector cutoff current IC = 0.8A, IB1 = 0.16A, IB2 = – 0.32A, VCC = 250V 800 V 4 MHz 1.0 µs 4.0 µs 1.0 µs 1 Power Transistors 2SC3743 IC — VCE (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 70 60 50 (1) 40 30 20 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) VCE(sat) — IC 5 4 IB=600mA 400mA 3 300mA 200mA 2 100mA 50mA 1 (2) 10 20mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 10 12 TC=–25˚C 100˚C 25˚C 0.1 0.03 0.03 0.1 0.3 1 3 Collector current IC (A) Area of safe operation (ASO) Non repetitive pulse TC=25˚C 10 ICP 3 t=1ms IC 10ms 1 DC 0.3 0.1 0.03 0.01 1 3 10 30 100 0.3 TC=100˚C –25˚C 0.1 0.03 0.01 0.01 300 1000 Collector to emitter voltage VCE (V) 0.03 0.1 0.3 1 3 ton, tstg, tf — IC VCE=5V Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=250V TC=25˚C 30 300 100 25˚C 30 TC=100˚C 10 –25˚C 3 1 0.3 10 tstg 3 1 tf 0.3 ton 0.1 0.03 0.1 0.01 0.03 0.01 0.1 0.3 1 3 Collector current IC (A) 100 30 25˚C Collector current IC (A) Switching time ton,tstg,tf (µs) 3 0.3 1 100 IC/IB=5 10 1 3 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 1000 0.01 0.01 Collector current IC (A) 6 IC/IB=5 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 30 2 4 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 80 10 0 0.4 0.8 1.2 1.6 Collector current IC (A) 2.0 Power Transistors 2SC3743 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=100µH IC/IB=5 (2IB1=–IB2) TC=25˚C Collector current IC (A) 7 L coil 6 IB1 T.U.T IC ICP 5 –IB2 Vin 4 VCC IC 3 2 Vclamp tW 1 0 0 200 400 600 800 1000 1200 1400 1600 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3