IRF IRGP4086PBF Pdp trench igbt Datasheet

PD - 97132
IRGP4086PbF
PDP TRENCH IGBT
Features
l Advanced Trench IGBT Technology
l Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
TM)
l Low VCE(on) and Energy per Pulse (EPULSE
for Improved Panel Efficiency
l High Repetitive Peak Current Capability
l Lead Free Package
Key Parameters
VCE min
VCE(ON) typ. @ IC = 70A
IRP max @ TC= 25°C c
TJ max
300
1.90
250
150
C
V
V
A
°C
C
E
G
G
C
E
n-channel
G
G ate
TO-247AC
C
C ollector
E
E m itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
VGE
IC @ TC = 25°C
Max.
Units
±30
V
70
A
Gate-to-Emitter Voltage
Continuous Collector Current, VGE @ 15V
IC @ TC = 100°C
Continuous Collector, VGE @ 15V
40
IRP @ TC = 25°C
Repetitive Peak Current c
250
PD @TC = 25°C
Power Dissipation
160
PD @TC = 100°C
Power Dissipation
63
W
Linear Derating Factor
1.3
W/°C
TJ
Operating Junction and
-40 to + 150
°C
TSTG
Storage Temperature Range
300
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lbxin (1.1Nxm)
N
Thermal Resistance
Parameter
RθJC (IGBT)
RθCS
RθJA
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Thermal Resistance Junction-to-Case-(each IGBT) d
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount) d
Weight
Typ.
Max.
–––
0.24
–––
6.0 (0.21)
0.8
–––
40
–––
Units
°C/W
g (oz)
1
4/17/08
IRGP4086PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Conditions
Typ. Max. Units
Collector-to-Emitter Breakdown Voltag 300
–––
–––
ΔΒVCES/ΔTJ Breakdown Voltage Temp. Coefficient –––
0.29
–––
–––
1.29
1.46
VGE = 0V, ICE = 1 mA
V
V/°C Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 25A e
–––
1.49
1.67
VGE = 15V, ICE = 40A e
–––
1.90
2.10
–––
2.57
2.96
BVCES
VCE(on)
Static Collector-to-Emitter Voltage
V
VGE = 15V, ICE = 120A e
VGE = 15V, ICE = 70A, TJ = 150°C
–––
2.27
–––
Gate Threshold Voltage
2.6
–––
5.0
V
ΔVGE(th)/ΔTJ Gate Threshold Voltage Coefficient
ICES
Collector-to-Emitter Leakage Current
–––
-11
–––
mV/°C
–––
2.0
25
μA
VGE(th)
IGES
5.0
–––
VCE = 300V, VGE = 0V, TJ = 100°C
100
–––
VCE = 300V, VGE = 0V, TJ = 150°C
–––
–––
100
–––
–––
-100
gfe
Forward Transconductance
–––
29
–––
S
Qg
Total Gate Charge
–––
65
–––
nC
Qgc
Gate-to-Collector Charge
–––
22
–––
td(on)
Turn-On delay time
—
36
—
tr
Rise time
—
31
—
td(off)
Turn-Off delay time
—
112
—
tf
Fall time
—
65
—
td(on)
Turn-On delay time
—
30
—
tr
Rise time
—
33
—
td(off)
Turn-Off delay time
—
145
—
tf
Fall time
—
98
—
tst
Shoot Through Blocking Time
100
–––
–––
–––
1075
–––
–––
1432
–––
–––
2250
–––
Ciss
Input Capacitance
Coss
Output Capacitance
–––
110
–––
Crss
Reverse Transfer Capacitance
–––
58
–––
LC
Internal Collector Inductance
–––
5.0
–––
nA
Internal Emitter Inductance
Notes:
 Half sine wave with duty cycle = 0.1, ton=2μsec.
‚ Rθ is measured at TJ of approximately 90°C.
2
–––
13
–––
VGE = 30V
VGE = -30V
VCE = 25V, ICE = 25A
VCE = 200V, IC = 25A, VGE = 15Ve
IC = 25A, VCC = 196V
ns
RG = 10Ω, L=200μH, LS= 200nH
TJ = 25°C
IC = 25A, VCC = 196V
ns
RG = 10Ω, L=200μH, LS= 200nH
TJ = 150°C
ns
VCC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.40μF, VGE = 15V
μJ
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
VGE = 0V
pF
VCE = 30V
ƒ = 1.0MHz,
See Fig.13
Between lead,
nH
LE
VCE = 300V, VGE = 0V
–––
Gate-to-Emitter Reverse Leakage
Energy per Pulse
VCE = VGE, ICE = 500μA
–––
Gate-to-Emitter Forward Leakage
EPULSE
VGE = 15V, ICE = 70A e
6mm (0.25in.)
from package
and center of die contact
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
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IRGP4086PbF
240
240
VGE = 18V
200
VGE = 15V
200
VGE = 15V
160
VGE = 10V
160
VGE = 10V
VGE = 12V
VGE = 8.0V
ICE (A)
ICE (A)
VGE = 18V
VGE = 6.0V
120
VGE = 8.0V
VGE = 6.0V
120
80
80
40
40
0
VGE = 12V
0
0
4
8
12
16
0
4
8
VCE (V)
Fig 1. Typical Output Characteristics @ 25°C
16
Fig 2. Typical Output Characteristics @ 75°C
240
240
VGE = 18V
200
VGE = 15V
160
VGE = 10V
VGE = 18V
VGE = 12V
VGE = 8.0V
ICE (A)
ICE (A)
12
VCE (V)
VGE = 6.0V
120
200
VGE = 15V
160
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
80
80
40
40
0
VGE = 12V
0
0
4
8
12
16
0
4
8
VCE (V)
12
16
VCE (V)
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
240
10
IC = 25A
200
VCE (V)
160
ICE (A)
8
TJ = 25°C
TJ = 150°C
120
TJ = 25°C
TJ = 150°C
6
4
80
2
40
0
0
2
4
6
8
10
12
14
VGE (V)
Fig 5. Typical Transfer Characteristics
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16
5
10
15
20
VGE (V)
Fig 6. VCE(ON) vs. Gate Voltage
3
IRGP4086PbF
80
300
Repetitive Peak Current (A)
IC, Collector Current (A)
70
60
50
40
30
20
200
100
ton= 2μs
Duty cycle = 0.1
Half Sine Wave
10
0
0
0
25
50
75
100
125
25
150
T C, Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
75
100
125
150
Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1600
1500
1400
VCC = 240V
1300
L = 220nH
C = variable
L = 220nH
C = 0.4μF
1400
100°C
1200
Energy per Pulse (μJ)
Energy per Pulse (μJ)
50
1100
1000
900
800
25°C
700
100°C
1200
1000
800
25°C
600
600
400
500
200
400
160
170
180
190
200
210
220
150 160 170 180 190 200 210 220 230 240
230
VCE, Collector-to-Emitter Voltage (V)
IC, Peak Collector Current (A)
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1000
2000
VCC = 240V
L = 220nH
t = 1μs half sine
C= 0.4μF
100
1200
10 μs
IC (A)
Energy per Pulse (μJ)
1600
C= 0.3μF
800
400
100 μs
10
1ms
C= 0.2μF
1
0
25
50
75
100
125
TJ, Temperature (ºC)
Fig 11. EPULSE vs. Temperature
4
150
1
10
100
1000
VCE (V)
Fig 12. Forward Bias Safe Operating Area
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IRGP4086PbF
25
VGE, Gate-to-Source Voltage (V)
10000
Capacitance (pF)
Cies
1000
100
Coes
Cres
ID= 25A
VDS = 240V
VDS = 200V
20
VDS = 150V
15
10
5
0
10
0
100
200
0
300
20
VCE (V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
40
60
80
100
QG Total Gate Charge (nC)
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
1
Thermal Response ( Z thJC )
D = 0.50
0.20
0.1
0.10
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
τC
τ1
τ2
τ2
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
τ3
τ3
τ
τι (sec)
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
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5
IRGP4086PbF
A
RG
C
DRIVER
PULSE A
L
VCC
B
RG
PULSE B
Ipulse
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
L
IC Current
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
6
Fig. 17 - Gate Charge Circuit (turn-off)
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IRGP4086PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2001
IN T HE AS S EMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
IRFPE30
56
135H
57
DAT E CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
Data and specifications subject to change without notice.
procedures, which by their nature do not include qualification to This product has been designed for the Industrial market.
all possible or even all widely used applications. Without
Qualification Standards can be found on IR’s Web site.
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers are
encouraged to and responsible for qualifying product to their
own use and their own application environments, especially
where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/08
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7
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