Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 3.05±0.1 • Output of 4 W can be obtained by a complementary pair with 2SA0886 • TO-126B package which requires no insulation plate for installation to the heat sink 11.0±0.5 ■ Features 16.0±1.0 3.8±0.3 φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 40 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit 10 µA 220 IC = 2 A, IB = 0.2 A 1 V IC = 2 A, IB = 0.2 A 1.5 V 80 VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz VCB = 20 V, IE = 0, f = 1 MHz 35 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 80 to 160 120 to 220 Publication date: February 2003 SJD00095BED 1 2SC1847 IC VCE 4.0 VCE(sat) IC TC=25˚C Collector power dissipation PC (W) 3.5 Collector current IC (A) 1.2 0.8 0.4 IB=40mA 35mA 3.0 30mA 2.5 25mA 20mA 2.0 15mA 1.5 10mA 1.0 5mA 0.5 0 0 0 40 80 120 160 0 2 4 6 8 10 Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) VBE(sat) IC hFE IC Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.6 IC/IB=10 1 TC=100˚C 25˚C 0.1 –25˚C 0.01 0.001 0.01 0.1 1 Collector current IC (A) fT I E 240 Forward current transfer ratio hFE TC=–25˚C 100˚C 25˚C 0.1 0.01 0.01 0.1 TC=100˚C 25˚C –25˚C 100 10 1 0.01 1 Collector current IC (A) 80 40 −0.1 40 20 10 100 −1 −10 Emitter current IE (A) ICBO Ta 1000 VCB=20V TC=25˚C 50 40 ICBO (Ta) ICBO (Ta = 25°C) 60 Collector-base voltage VCB (V) 2 120 0 −0.01 1 60 Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob 80 1 160 VCER RBE IE=0 f=1MHz TC=25˚C 100 0.1 200 Collector current IC (A) Cob VCB 120 Transition frequency fT (MHz) Base-emitter saturation voltage VBE(sat) (V) 1000 1 0 VCB=5V f=200MHz TC=25˚C VCE=5V IC/IB=10 10 30 20 100 10 10 0 0.001 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00095BED 1 0 20 40 60 80 Ambient temperature Ta (°C) 100 2SC1847 Rth t Safe operation area 10 Single pulse TC=25˚C t=10ms 1 IC t=1s 0.1 0.01 0.001 0.1 1 10 (1)Without heat sink (2)With a 100×100×2mm Al heat sink 104 Thermal resistance Rth (°C/W) Collector current IC (A) ICP 100 103 (1) 102 (2) 10 1 10−1 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 10−1 1 10 102 103 104 Time t (s) SJD00095BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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