Infineon BFN19 Pnp silicon high-voltage transistor Datasheet

BFN17, BFN19
PNP Silicon High-Voltage Transistors
1
Suitable for video output stages in TV sets and
2
switching power supplies
3
High breakdown voltage
Low collector-emitter saturation voltage
Complementary types: BFN16, BFN18 (NPN)
2
VPS05162
Type
Marking
Pin Configuration
Package
BFN17
DG
1=B
2=C
3=E
SOT89
BFN19
DH
1=B
2=C
3=E
SOT89
BFN17
BFN19
Maximum Ratings
Parameter
Symbol
Unit
Collector-emitter voltage
VCEO
250
300
Collector-base voltage
VCBO
250
300
Emitter-base voltage
VEBO
5
5
DC collector current
IC
200
Peak collector current
ICM
500
Base current
IB
100
Peak base current
IBM
200
Total power dissipation, TS = 130 °C
Ptot
1
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
V
mA
-65 ... 150
Thermal Resistance
Junction - soldering point1)
RthJS
20
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BFN17, BFN19
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO
BFN17
250
-
-
BFN19
300
-
-
BFN17
250
-
-
BFN19
300
-
-
5
-
-
V(BR)CBO
Collector-base breakdown voltage
IC = 100 µA, IE = 0
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 100 µA, IC = 0
Collector cutoff current
ICBO
nA
VCB = 200 V, IE = 0
BFN17
-
-
100
VCB = 250 V, IE = 0
BFN19
-
-
100
Collector cutoff current
ICBO
µA
VCB = 200 V, IE = 0 , TA = 150 °C
BFN17
-
-
20
VCB = 250 V, IE = 0 , TA = 150 °C
BFN19
-
-
20
-
-
100
Emitter cutoff current
IEBO
nA
VEB = 5 V, IC = 0
DC current gain 1)
hFE
-
IC = 1 mA, VCE = 10 V
25
-
-
IC = 10 mA, VCE = 10 V
40
-
-
BFN17
40
-
-
BFN19
30
-
-
IC = 30 mA, VCE = 10 V
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
VCEsat
V
BFN17
-
-
0.4
BFN19
-
-
0.5
-
-
0.9
Base-emitter saturation voltage 1)
VBEsat
IC = 20 mA, IB = 2 mA
1) Pulse test: t < 300s; D < 2%
2
Nov-30-2001
BFN17, BFN19
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
100
-
MHz
Ccb
-
2.5
-
pF
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 10 V, f = 20 MHz
Collector-base capacitance
VCB = 30 V, f = 1 MHz
3
Nov-30-2001
BFN17, BFN19
Total power dissipation Ptot = f(TS)
Operating range I C = f (VCEO)
TA = 25°C, D = 0
10 3
1.2
BFN 17/19
EHP00587
mA
W
P tot
Ι C 10 2
0.8
5
0.6
10 1
10 µ s
100 µ s
1 ms
100 ms
5
DC
0.4
10 0
5
0.2
0
0
15
30
45
60
75
90 105 120
10 -1 0
10
°C 150
TS
5
10 1
5
10 2
Collector current I C = f (VBE)
Ptotmax / PtotDC = f (tp )
VCE = 10V
BFN 17/19
Ptot max
5
Ptot DC
EHP00588
D=
tp
T
10 3
V CEO
Permissible pulse load
10 3
V 5
10 3
BFN 17/19
EHP00589
mA
tp
ΙC
T
10 2
10 2
5
10
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
10 1
5
10 0
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 -1
10 0
tp
0
0.5
V
1.0
1.5
V BE
4
Nov-30-2001
BFN17, BFN19
Transition frequency fT = f (IC)
Collector cutoff current ICBO = f (T A)
VCE = 10V
VCB = 200V
10 3
BFN 17/19
EHP00590
10 4
nA
MHz
fT
Ι CBO
BFN 17/19
EHP00591
max
10 3
5
10 2
5
10 2
typ
10 1
5
5
10 0
5
10 1
10 0
5
10 1
5
10 2 mA 5
ΙC
10-1
10 3
0
50
˚C
100
150
TA
DC current gain hFE = f (IC )
VCE = 10V
10 3
BFN 17/19
EHP00592
5
h FE
10 2
5
2
10 1
5
10 0
-1
10
5 10 0
5 10 1
5 10 2 mA 10 3
ΙC
5
Nov-30-2001
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