PANASONIC 2SJ0536

Silicon MOS FETs (Small Signal)
2SJ0536
Silicon P-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
unit: mm
2.1±0.1
0.425
1.25±0.1
0.425
0.3–0
0.65
1
0.65
2.0±0.2
● High-speed switching
● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
● Low-voltage drive (Vth: −1 to 2V)
● Low Ron
1.3±0.1
+0.1
■ Features
3
Parameter
Symbol
Ratings
Unit
−30
V
Drain to Source voltage
VDS
Gate to Source voltage
VGSO
±20
V
Drain current
ID
−100
mA
Max drain current
IDP
−200
mA
Allowable power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
+0.1
0.15–0.05
0 to 0.1
■ Absolute Maximum Ratings (Ta = 25°C)
0.7±0.1
0.9±0.1
0.2
2
1: Gate
2: Source
3: Drain
0.2±0.1
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain current
IDSS
VDS = −30V, VGS = 0
− 0.1
µA
Gate cut-off current
IGSS
VGS = ±20V, VDS = 0
±1
µA
Gate threshold voltage
Vth
VDS = −5V, ID = −1µA
−1
Forward transfer admittance
| Yfs |
VDS = −5V, ID = −10mA
8
Drain to source ON-resistance
RDS(on)
VGS = −5V, ID = −10mA
50
Turn-on time
ton
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
100
µs
Turn-off time
toff
VDD = −5V, VGS = −5 to 0V, RL = 200Ω
25
µs
−2
V
mS
75
Ω
1
Silicon MOS FETs (Small Signal)
2SJ0536
PD  Ta
ID  VDS
60
Ta=25˚C
–100
160
120
80
40
–80
VGS=–5.5V
–60
–5.0V
–4.5V
–40
–4.0V
–3.5V
–20
–3.0V
0
–2.5V
0
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
–2
–4
–6
–8
–12
Drain to source voltage VDS (V)
ID  VGS
VIN  IO
–240
–100
VO=–5V
Ta=25˚C
VDS=–5V
–30
Input voltage VIN (V)
–200
Drain current ID (mA)
–10
–160
–120
Ta=–25˚C
25˚C
75˚C
–80
–10
–3
–1
– 0.3
– 0.1
–40
– 0.03
0
0
–2
–4
–6
–8
–10
–12
Gate to source voltage VGS (V)
2
– 0.01
– 0.1 – 0.3
–1
–3
–10
–30
Output current IO (mA)
–100
Forward transfer admittance |Yfs| (mS)
–120
Drain current ID (mA)
Allowable power dissipation PD (mW)
200
| Yfs |  VGS
VDS=–5V
50
40
30
20
10
0
0
–2
–4
–6
–8
–10
–12
Gate to source voltage VGS (V)