AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3460/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. AO3460 and AO3460L are electrically identical. -RoHS Compliant -AO3460L is Halogen Free VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.5V) D1 TO-236 (SOT-23) Top View G1 G D S S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 60 V Gate-Source Voltage ±20 GS Continuous Drain Current A, F Pulsed Drain Current TA=25°C ID IDM TA=70°C B 1.6 1.4 -55 to 150 Symbol A t ≤ 10s Steady-State Steady-State Alpha & Omega Semiconductor, Ltd. W 0.9 Junction and Storage Temperature Range TJ, TSTG A A 0.5 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C V 0.65 TA=25°C Power Dissipation A Units V RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3460 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250uA On state drain current VGS=10V, VDS=5V RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=0.1A,VGS=0V Maximum Body-Diode Continuous Current 1 1 Crss Reverse Transfer Capacitance SWITCHING PARAMETERS tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 2.2 µA ±10 µA 2.5 V A 1.4 1.7 2.5 3 VGS=4.5V, ID=0.5A 1.6 2 VDS=5V, ID=0.65A 0.8 TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance 5 1.6 VGS=10V, ID=0.65A Coss Units V TJ=55°C ID(ON) Max 60 VDS=60V, VGS=0V IDSS IS Typ 0.8 22 VGS=0V, VDS=30V, f=1MHz Ω Ω S 1 V 1.2 A 27 pF 6 pF 2 pF 5.3 ns VGS=10V, VDS=30V, RL=75Ω, RGEN=3Ω 2.8 ns 19.7 ns 5.5 trr Body Diode Reverse Recovery Time IF=0.65A, dI/dt=100A/µs, VGS=-9V 11.3 Qrr Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V 7.5 ns 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 1: May 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 2 0.8 4.5V VDS=0V, VGS=±10V 4V 1 0.6 ID(A) ID (A) 1.5 VDS=5V 10V 6V 25°C 0.4 VDS=VGS ID=250µA 3.5V 0.5 0.2 125°C VGS=3.0V 0 0 0 1 2 3 4 0 5 1 2 3 4 3 Normalized On-Resistance 2.2 2.5 VGS=4.5V 2 1.5 VGS=10V 1 VGS=10V ID=0.65A 1.8 VGS=4.5V ID=0.5 1.4 1.0 0.6 0 0.5 1 1.5 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+00 4 ID=0.65A 125°C 3.5 25°C 1.0E-01 -40°C IS (A) 3 RDS(ON) (Ω) 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (Ω) -40°C 2.5 1.0E-02 125°C 1.0E-03 2 25°C 1.0E-04 1.5 1.0E-05 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 VDS=30V ID=0.65A Ciss 25 6 VDS=0V, VGS=±10V 4 VDS=VGS ID=250µA Capacitance (pF) VGS (Volts) 8 20 15 10 2 Coss 5 0 0.0 0.1 0.2 0.3 0.4 0.5 Crss 0 0.6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 20 10µs 100µs 1ms 10ms RDS(ON) limited 0.100 0.1s 1s 10s DC 0.010 1 VDS (Volts) 10 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 0 0.0001 0.001 0.1 12 4 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TA=25°C 16 Power (W) 1.000 ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.000 ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com