NLU1GT126 Non-Inverting 3-State Buffer, TTL Level LSTTL−Compatible Inputs The NLU1GT126 MiniGatet is an advanced CMOS high−speed non−inverting buffer in ultra−small footprint. The NLU1GT126 requires the 3−state control input (OE) to be set Low to place the output in the high impedance state. The device input is compatible with TTL−type input thresholds and the output has a full 5.0 V CMOS level output swing. The NLU1GT126 input and output structures provide protection when voltages up to 7.0 V are applied, regardless of the supply voltage. www.onsemi.com MARKING DIAGRAMS • • • • High Speed: tPD = 3.8 ns (Typ) @ VCC = 5.0 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C TTL−Compatible Input: VIL = 0.8 V; VIH = 2.0 V CMOS−Compatible Output: VOH > 0.8 VCC; VOL < 0.1 VCC @ Load Power Down Protection Provided on inputs Balanced Propagation Delays Ultra−Small Packages These are Pb−Free Devices 9M UDFN6 1.0 x 1.0 CASE 517BX XM UDFN6 1.45 x 1.0 CASE 517AQ XM 1 Features • • • • UDFN6 1.2 x 1.0 CASE 517AA 1 1 9 M = Device Marking = Date Code ORDERING INFORMATION OE 1 6 VCC IN A 2 5 NC GND 3 4 OUT Y See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. Pinout (Top View) OE IN A OUT Y Figure 2. Logic Symbol FUNCTION TABLE Input Output A OE Y L H X H H L L H Z © Semiconductor Components Industries, LLC, 2016 July, 2016 − Rev. 5 PIN ASSIGNMENT 1 OE 2 IN A 3 GND 4 OUT Y 5 NC 6 VCC 1 Publication Order Number: NLU1GT126/D NLU1GT126 MAXIMUM RATINGS Symbol Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V DC Output Voltage −0.5 to +7.0 V VIN < GND −20 mA VOUT < GND ±20 mA VOUT Parameter IIK DC Input Diode Current IOK DC Output Diode Current IO DC Output Source/Sink Current ±12.5 mA ICC DC Supply Current Per Supply Pin ±25 mA IGND DC Ground Current per Ground Pin ±25 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias 150 °C MSL Moisture Sensitivity FR Flammability Rating ILATCHUP Level 1 Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in Latchup Performance Above VCC and Below GND at 125°C (Note 2) mA ±500 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 1.65 5.5 V VCC Positive DC Supply Voltage VIN Digital Input Voltage 0 5.5 V Output Voltage 0 5.5 V −55 +125 °C 0 0 100 20 ns/V VOUT TA Operating Free−Air Temperature Dt/DV Input Transition Rise or Fall Rate VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2 NLU1GT126 DC ELECTRICAL CHARACTERISTICS TA = 25 5C Symbol Parameter Conditions VCC (V) Min 1.4 2.0 VIH Low−Level Input Voltage 3.0 4.5 to 5.5 VIL Low−Level Input Voltage 3.0 4.5 to 5.5 VOH High−Level Output Voltage VOL Low−Level Output Voltage Typ Max TA = +855C TA = −555C to +1255C Min Min 1.4 2.0 0.53 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 3.0 4.5 0 0 Max 1.4 2.0 0.53 0.8 V 0.53 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V IIN Input Leakage Current 0 v VIN v 5.5 V 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Quiescent Supply Current 0 v VIN v VCC 5.5 1.0 20 40 mA ICCT Quiescent Supply Current VIN = 3.4 V Other Input: VCC or GND 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0 0.5 5.0 10 mA IOZ 3−State Leakage Current VIN = VIH or VIL VOUT = VCC or GND 0 ±0.25 ±2.5 ±2.5 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Symbol tPLH, tPHL tPZL, tPZH tPLZ, tPHZ CIN Parameter Propagation Delay, A to Y (Figures 3 and 5) Output Enable Time, OE to Y (Figures 4 and 6) Output Disable Time, OE to Y (Figures 4 and 6) VCC (V) Test Condition 3.0 to 3.6 TA = 25 5C Min TA = +855C TA = −555C to +1255C Min Typ Max Min Max Max Unit CL = 15 pF CL = 50 pF 5.6 8.1 8.0 11.5 1.0 1.0 9.5 13 12 16 ns 4.5 to 5.5 CL = 15 pF CL = 50 pF 3.8 5.3 5.5 7.5 1.0 1.0 6.5 8.5 8.5 10.5 3.0 to 3.6 CL = 15 pF CL = 50 pF 5.4 7.9 8.0 11.5 1.0 1.0 9.5 13 11.5 15 4.5 to 5.5 CL = 15 pF CL = 50 pF 3.6 5.1 5.1 7.1 1.0 1.0 6.0 8.0 7.5 9.5 3.0 to 3.6 CL = 15 pF CL = 50 pF 6.5 8.0 9.7 13.2 1.0 1.0 11.5 15 14.5 18.5 4.5 to 5.5 CL = 15 pF CL = 50 pF 4.8 7.0 6.8 8.8 1.0 1.0 8.0 10 10 12 10 10 10 ns ns Input Capacitance 4 COUT 3−State Output Capacitance (Output in High Impedance State) 6 pF CPD Power Dissipation Capacitance (Note 3) 14 pF 5.0 pF 3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without load. Average operating current can be obtained by the equation ICC(OPR) = CPD • VCC • fin + ICC. CPD is used to determine the no−load dynamic power consumption: PD = CPD • VCC2 • fin + ICC • VCC. www.onsemi.com 3 NLU1GT126 SWITCHING WAVEFORMS OE VCC 50% A tPHL tPLH VCC 50% GND tPZL GND HIGH IMPEDANCE 50% VCC Y 50% VCC tPLZ VOL + 0.3V tPZH tPHZ Y Figure 3. Switching Waveforms HIGH IMPEDANCE Figure 4. TEST POINT TEST POINT OUTPUT DEVICE UNDER TEST VOH − 0.3V 50% VCC Y DEVICE UNDER TEST CL * *Includes all probe and jig capacitance OUTPUT 1 kW CL * CONNECT TO VCC WHEN TESTING tPLZ AND tPZL. CONNECT TO GND WHEN TESTING tPHZ AND tPZH. *Includes all probe and jig capacitance Figure 5. Test Circuit Figure 6. Test Circuit INPUT Figure 7. Input Equivalent Circuit ORDERING INFORMATION Package Shipping† NLU1GT126MUTCG UDFN6, 1.2 x 1.0, 0.4P (Pb−Free) 3000 / Tape & Reel NLU1GT126AMUTCG UDFN6, 1.45 x 1.0, 0.5P (Pb−Free) 3000 / Tape & Reel NLU1GT126CMUTCG UDFN6, 1.0 x 1.0, 0.35P (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 NLU1GT126 PACKAGE DIMENSIONS UDFN6, 1.2x1.0, 0.4P CASE 517AA ISSUE D EDGE OF PACKAGE PIN ONE REFERENCE 2X 0.10 C L1 ÉÉ ÉÉ E DETAIL A Bottom View (Optional) TOP VIEW 2X EXPOSED Cu 0.10 C (A3) 0.10 C A1 A 10X 0.08 C ÉÉÉ ÉÉÉ MOLD CMPD 5X DIM A A1 A3 b D E e L L1 L2 MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.127 REF 0.15 0.25 1.20 BSC 1.00 BSC 0.40 BSC 0.30 0.40 0.00 0.15 0.40 0.50 MOUNTING FOOTPRINT* 6X C A1 A3 DETAIL B Side View (Optional) SEATING PLANE SIDE VIEW 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A B D 6X 0.42 0.22 L 3 L2 6X b 0.10 C A B 0.05 C 6 0.40 PITCH 4 e NOTE 3 BOTTOM VIEW 1.07 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 NLU1GT126 PACKAGE DIMENSIONS UDFN6 1.45x1.0, 0.5P CASE 517AQ ISSUE O A B D L L L1 PIN ONE REFERENCE 0.10 C ÉÉÉ ÉÉÉ DETAIL A E OPTIONAL CONSTRUCTIONS DETAIL B OPTIONAL CONSTRUCTIONS A 0.05 C A1 SIDE VIEW MOLD CMPD DETAIL B 0.05 C 6X DIM A A1 A2 b D E e L L1 ÉÉ ÉÉ EXPOSED Cu TOP VIEW 0.10 C A2 6X C 6X SEATING PLANE 0.30 PACKAGE OUTLINE L 1.24 3 DETAIL A 6X 0.53 4 BOTTOM VIEW MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.07 REF 0.20 0.30 1.45 BSC 1.00 BSC 0.50 BSC 0.30 0.40 −−− 0.15 MOUNTING FOOTPRINT e 1 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 mm FROM THE TERMINAL TIP. 6X 0.50 PITCH DIMENSIONS: MILLIMETERS b 0.10 C A B 0.05 C 1 NOTE 3 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 NLU1GT126 PACKAGE DIMENSIONS UDFN6 1.0x1.0, 0.35P CASE 517BX ISSUE O PIN ONE REFERENCE 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20 MM FROM TERMINAL TIP. 4. PACKAGE DIMENSIONS EXCLUSIVE OF BURRS AND MOLD FLASH. A B D ÉÉÉ ÉÉÉ ÉÉÉ E 0.10 C 2X 0.10 C DIM A A1 A3 b D E e L L1 TOP VIEW A3 0.05 C A MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.13 REF 0.12 0.22 1.00 BSC 1.00 BSC 0.35 BSC 0.25 0.35 0.30 0.40 0.05 C SIDE VIEW A1 C RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE 5X e 5X 0.48 L 6X 0.22 3 1 L1 1.18 6 4 6X BOTTOM VIEW b 0.10 M C A B 0.05 M C 0.53 1 PKG OUTLINE NOTE 3 0.35 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MiniGate is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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