Kexin AO3409-3 P-channel enhancement mosfet Datasheet

MOSFET
SMD Type
P-Channel Enhancement MOSFET
AO3409
(KO3409)
SOT-23-3
Unit: mm
Features
0.4
+0.2
2.9 -0.1
+0.1
0.4 -0.1
3
(VGS = -10V)
RDS(ON) < 200m
(VGS = -4.5V)
1
D
2
+0.02
0.15 -0.02
+0.1
0.95 -0.1
+0.1
1.9 -0.2
+0.2
1.1 -0.1
RDS(ON) < 130m
0.55
ID = -2.6 A (VGS = -10V)
+0.2
1.6 -0.1
+0.2
2.8 -0.1
VDS (V) = -30V
0-0.1
S
+0.1
0.68 -0.1
1. Gate
G
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Symbol
Rating
Unit
VDS
-30
V
VGS
TA=25
TA=70
Pulsed Drain Current
Power Dissipation
ID
IDM
TA=25
TA=70
Themal Resistance. Junction-to-Ambient
Themal Resistance. Junction-to-Case
Junction and Storage Temperature Range
PD
20
V
-2.6
-2.2
A
-20
1.4
1
W
125
/W
RthJC
80
/W
TJ, TSTG
-55 to 150
RthJA
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MOSFET
SMD Type
AO3409
(KO3409)
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Testconditions
Min
VDS=-24V, VGS=0V ,TJ=55
-5
100
nA
-1.9
-3
V
IGSS
VDS=0V, VGS= 20V
Gate Threshold Voltage
VGS(th)
VDS=VGS ID=-250 A
Static Drain-Source On-Resistance
rDS(ON)
-1
VGS=-10V, ID=-2.6A
VGS=-10V, ID=-2.6A
TJ=125
VGS=-4.5V, ID=-2A
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Gate resistance
Rg
Total Gate Charge (10V)
VGS=-4.5V, VDS=-5V
-5
VDS=-5V, ID=-5A
3
Gate Source Charge
Qgs
130
150
166
200
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-2.6A
A
m
m
A
3.8
S
370
pF
50.3
pF
37.8
pF
12
18
6.8
9
nC
2.4
nC
1.6
nC
Gate Drain Charge
Qgd
0.95
nC
Turn-On DelayTime
tD(on)
7.5
ns
Turn-On Rise Time
tr
3.2
ns
Turn-Off DelayTime
tD(off)
VGS=-10V, VDS=-15V, RL=5.8 ,RGEN=3
17
ns
6.8
ns
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
trr
IF=-2.6A, dI/dt=100A/
s
16.8
Body Diode Reverse Recovery Charge
Qrr
IF=-2.6A, dI/dt=100A/
s
10
Maximum Body-Diode Continuous Current
IS
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
* Repetitive rating, pulse width limited by junction temperature.
Marking
Marking
2
97
135
302
Qg
Total Gate Charge (4.5V)
V
-1
Gate-Body leakage current
ID(ON)
Unit
VDS=-24V, VGS=0V
IDSS
On state drain current
Max
-30
ID=250 A, VGS=0V
Zero Gate Voltage Drain Current
Forward Transconductance
Typ
A9*
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-0.82
22
ns
nC
-2
A
-1
V
MOSFET
IC
SMD Type
AO3409
(KO3409)
■ Typical Characterisitics
10
20
-8V
VDS=-5V
8
15
-6V
10
-5.5V
-5V
25°C
-ID(A)
-ID (A)
-10V
VGS=-4.5V
-4V
-3.5V
5
0
1
2
3
4
125°C
4
2
-3.0V
0
6
0
5
1
2
250
Normalized On-Resistance
RDS(ON) (mΩ)
4
5
6
1.6
200
150
VGS=-4.5V
100
VGS=-10V
50
VGS=-10V
1.4
VGS=-4.5V
1.2
ID=-2A
1
0.8
0
1
2
3
4
5
6
0
25
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01
300
1.0E+00
250
ID=-2A
200
1.0E-01
125°C
-IS (A)
RDS(ON) (mΩ)
3
-VGS(Volts)
Figure 2: Transfer Characteristics
-VDS (Volts)
Fig 1: On-Region Characteristics
150
100
25°C
1.0E-02
125°C
1.0E-03
25°C
1.0E-04
50
1.0E-05
1.0E-06
0
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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MOSFET
IC
SMD Type
AO3409
(KO3409)
■ Typical Characterisitics
10
500
VDS=-15V
ID=-2.6A
9
8
400
Capacitance (pF)
-VGS (Volts)
7
6
5
4
3
2
Ciss
300
200
Coss
100
1
0
0
1
2
3
4
5
6
Crss
0
7
0
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=150°C
TA=25°C
100µs
10ms
10s
DC
1
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
ZθJA Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=90°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
30
10
0
0.001
0.1
10
25
5
1s
0.1
20
TJ(Max)=150°C
18
TA=25°C
15
10µs
1ms
0.1s
1.0
15
20
RDS(ON)
limited
10.0
10
-VDS (Volts)
Figure 8: Capacitance Characteristics
Power (W)
-ID (Amps)
100.0
5
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100
1000
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