MMST5551 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR NEW PRODUCT Features · · · · Epitaxial Planar Die Construction Complementary PNP Type Available (MMST5401) Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package SOT-323 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-323, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: K4N Weight: 0.006 grams (approx.) B Min Max A 0.30 0.40 B 1.15 1.35 C 2.00 2.20 D 0.65 Nominal E 0.30 0.40 G G 1.20 1.40 H H 1.80 2.20 D E Dim M K J L J 0.0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.25 All Dimensions in mm Maximum Ratings @ TA = 25°C unless otherwise specified Symbol MMST5551 Unit Collector-Base Voltage Characteristic VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 1) IC 200 mA Power Dissipation (Note 1) Pd 200 mW RqJA 625 K/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30173 Rev. B-1 1 of 2 MMST5551 NEW PRODUCT Electrical Characteristics Characteristic @ TA = 25°C unless otherwise specified Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 180 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 160 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 10mA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, TA = 100°C OFF CHARACTERISTICS (Note 2) Collector Cutoff Current ICBO ¾ 50 nA mA Emitter Cutoff Current IEBO ¾ 50 nA VEB = 4.0V, IC = 0 hFE 80 80 30 ¾ 250 ¾ ¾ IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.15 0.20 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base- Emitter Saturation Voltage VBE(SAT) ¾ 1.0 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Cobo ¾ 6.0 pF VCB = 10V, f = 1.0MHz, IE = 0 Small Signal Current Gain hfe 50 250 ¾ Current Gain-Bandwidth Product fT 100 300 MHz Noise Figure NF ¾ 8.0 dB VCE = 10V, IC = 1.0mA, f = 1.0kHz VCE = 10V, IC = 10mA, f = 100MHz VCE = 5.0V, IC = 200mA, RS = 1.0kW, f = 1.0kHz ON CHARACTERISTICS (Note 2) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Pulse test: Pulse width £ 300ms, duty cycle £ 2%. DS30173 Rev. B-1 2 of 2 MMST5551