Power F-MOS FETs 2SK3032 (Tentative) Silicon N-Channel Power F-MOS FET ■ Features ● Avalanche energy capacity guaranteed ● High-speed switching ● Low ON-resistance ● No secondary breakdown ● Low-voltage drive ● High electrostatic breakdown voltage unit: mm 6.5±0.1 5.3±0.1 4.35±0.1 ■ Absolute Maximum Ratings (TC = 25°C) Symbol * 2.3±0.1 Ratings Unit VDSS 100 V Gate to Source voltage VGSS ±20 V DC ID ±25 A Pulse IDP Avalanche energy capacity Allowable power TC = 25°C dissipation Ta = 25°C EAS* ±50 A 31.25 mJ 10 PD 0.5±0.1 0.75±0.1 Drain to Source breakdown voltage Drain current 1.0±0.2 1.0±0.1 0.1±0.05 0.93±0.1 0.8max 7.3±0.1 2.5±0.1 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 1.8±0.1 0.5±0.1 ■ Applications Parameter 2.3±0.1 4.6±0.1 1 2 1: Gate 2: Drain 3: Source U Type Package 3 W 1 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C L = 0.1mH, IL = 25A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 Gate threshold voltage Vth VDS = 10V, ID = 1mA RDS(on)1 VGS = 10V, ID = 12A Drain to Source ON-resistance RDS(on)2 VGS = 4V, ID = 12A Forward transfer admittance | Yfs | VDS = 10V, ID = 12A Diode forward voltage VDSF IDR = 25A, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss min typ VDS = 80V, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss max Unit 10 µA ±10 µA 100 V 1 8 2.5 V 64 100 mΩ 75 120 mΩ 16 S −1.7 V 1200 pF 280 pF 110 pF Turn-on time (delay time) td(on) 8 ns Rise time tr VDD = 30V, ID = 12A 7 ns Fall time tf VGS = 10V, RL = 2.5Ω 110 ns Turn-off time (delay time) td(off) 330 ns Thermal resistance between channel and case Rth(ch-c) 12.5 °C/W Thermal resistance between channel and atmosphere Rth(ch-a) 125 °C/W 1