Nell MJ15003 Complementary silicon power transistors (20a / 140v / 250w) Datasheet

MJ15003(NPN)
RoHS
MJ15004(PNP) RoHS
SEMICONDUCTOR
Nell High Power Products
Complementary Silicon power transistors
(20A / 140V / 250W)
13.10 Max.
26.00 Max.
TAB
1.60
Φ20.00 Max.
Φ1.00
1
16.85
2
TO-3
30.00
38.50
1
8.60
10.90
2
FEATURES
2- Φ 4.0 Thru.
Designed for general-purpose switching and amplifier
applications.
DC current gain-hFE = 25 (Min) @ lC = 5 Adc
All dimensions in millimeters
High safe operation area (100% tested) 250W @ 50V
INTERNAL SCHEMATIC DIAGRAM
For low distortion complementary designs
DESCRIPTION
C (TAB)
The MJ15003 is a silicon epitaxial-base planar
NPN transistor mounted in JEDEC TO-3 metal
case.
lt is designed for high power audio, disk head
positioners and other linear applications.
The complementary PNP type is MJ15004.
C (TAB)
(1)
B
(1)
B
(2)
(2)
E
MJ15003(NPN)
E
MJ15004(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
VALUE
VCBO
Collector to base voltage (I E = 0)
140
V CEO
Collector to emitter voltage (I B = 0)
140
V EBO
Emitter to base voltage
UNIT
V dc
5
IC
Collector current - continuous
IB
Base current - continuous
IE
Emitter current - continuous
20
5
25
T C = 25°C
Total power dissipation
A dc
250
W
Derate above 25ºC
1.43
W/ºC
Tj
Junction temperature
200
T stg
Storage temperature
-65 to 200
PD
ºC
TL
Maximum lead temperature for soldering purposes :
1/16” from case for ≤ 10 seconds
265
ºC
VALUE
UNIT
0.7
ºC/W
*For PNP types voltage and current values are negative.
THERMAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
Rth(j-c)
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PARAMETER
Thermal resistance, junction to case
Page 1 of 4
MJ15003(NPN)
RoHS
MJ15004(PNP) RoHS
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
ICEX
CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
V CE = 140V, V BE(off) = 1.5V
100
µA
V CE = 140V, V BE(off) = 1.5V, T C = 150°C
2.0
mA
Collector cutoff current
ICEO
Collector cutoff current
V CE = 140V, l B = 0
250
I EBO
Emitter cutoff current
V EBO = 5V, l C = 0
100
Collector to emitter sustaining voltage
l C = 200mA, l B = 0
140
V CBO
Collector to base voltage
lE = 0
140
V EBO
Emitter to base voltage
lC = 0
5
Forward current transfer ratio (DC current gain)
l C = 5A , V CE = 2V
V CE(sat) *
Collector to emitter saturation voltage
l C = 5A, l B = 0.5A
1.0
V BE(on) *
Base to emitter on voltage
l C = 5A, V CE = 2V
2.0
Transition frequency
(current gain - bandwidth product )
l C = 0.5A, V CE = 10V, f test = 0.5MH Z
C ob
Output capacitance
V CB = 10V, I E = 0, f test = 1MHz
l s/b *
Second breakdown collector current with base
forward baised
µA
V CEO (SUS) *
h FE
25
V
150
V
fT
5
V CE = 100V, t = 1s, non-repetitive
1
P D , Power dissipation, (W)
400
350
300
250
200
150
100
50
0
50
75
100
125
150
T C , Case temperature (°C)
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pF
A
Fig.1 Power derating
25
MH Z
1000
V CE = 50V, t = 1s, non-repetitive
*Pulsed : Pulse duration = 300 µs, duty cycle 2%.
*For PNP types voltage and current values are negative.
0
2.0
Page 2 of 4
175
200
MJ15003(NPN)
RoHS
MJ15004(PNP) RoHS
SEMICONDUCTOR
Nell High Power Products
l C , Collector current, (A)
Fig.2 Active region safe operating area
20
15
10
7
5
T C = 25°C
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate l C -V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to
greater dissipation than the curves indicate.
3
2
The data of fig.2 is based on T J(pk) = 200°C; T C is variable
depending on conditions. At high case temperatures, thermal
limitations will reduce the power that can be handled to values
less than the limitations imposed by second breakdown.
T J = 200°C
Bonding wire limited
1
0.7
0.5
Thermal limitation (single pulse)
Second breakdown limited
curves apply below rated V CEO
0.3
0.2
2
5
3
7
10
20
30
50 70 100 150 200
V CE , Collector-emitter voltage (V)
Fig.3 DC Current gain
MJ15003(NPN)
MJ15004(PNP)
500
200
100
70
50
V CE = 2.0V
200
T J = 25°C
30
20
10
7
5
0.2 0.3
0.5
1
2
5
7
10
100
70
50
20
V CE = 2.0V
T J = 100°C
T J = 100°C
DC current gain, h FE
DC current gain, h FE
300
300
T J = 25°C
20
10
7
5
0.2 0.3
0.5
l C , Collector current (Amp)
1
2
5
7
10
20
l C , Collector current (Amp)
Fig.4 “ON” Characteristics
MJ15004(PNP)
2.0
2.0
1.6
1.6
1.2
V BE @ V CE = 2V
0.8
T J = 100°C
T J = 25°C
T J = 25°C
0.4
T J = 100°C
Voltage, V (Volts)
Voltage, V (Volts)
MJ15003(NPN)
1.2
0.8
T J = 100°C
T J = 25°C
0.4
V CE(sat) @ l C /l B = 10
V BE @ V CE = 2V
T J = 25°C
T J = 100°C
V CE(sat) @ l C /l B = 10
0
0.2 0.3
0.5
1
2
5
7
10
0
0.2 0.3
20
Collector current, l C (Amp)
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0.5
1
2
5
7
Collector current, l C (Amp)
Page 3 of 4
10
20
MJ15003(NPN)
RoHS
MJ15004(PNP) RoHS
SEMICONDUCTOR
Nell High Power Products
Fig.6 Transiton frequency
(Current Gain-Bandwidth product)
Fig.5 Capacitances
10
MJ15003(NPN)
MJ15004(PNP)
Capacitance, C (pF)
1000
C ib
500
C ob
200
100
50
20
0.1
T C = 25°C
Transition frequency, f T (MHz)
2000
T J = 25°C
V CE = 10V
f test = 0.5MHz
9
8
MJ15004(PNP)
7
6
5
4
3
MJ15003(NPN)
2
1
0
0.2
0.5
10
20
50
100
0.1
Reverse voltage, V R (Volts)
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0.2
0.5
1.0
2.0 3.0
Collector current, l C (Amp)
Page 4 of 4
5.0
10
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