PANASONIC 2SK2375

Power F-MOS FETs
2SK2375
Silicon N-Channel Power F-MOS FET
■ Features
● Avalanche energy capacity guaranteed
● High-speed switching
● Low ON-resistance
● No secondary breakdown
unit: mm
15.5±0.5
Drain to Source breakdown voltage
VDSS
900
V
Gate to Source voltage
VGSS
±30
V
DC
ID
±8
A
Pulse
IDP
±16
A
60
mJ
Avalanche energy capacity
*
Allowable power
TC = 25°C
dissipation
Ta = 25°C
EAS*
PD
100
18.6±0.5
2.0
5˚
1
Drain current
0.7±0.1
5.45±0.3
2
3
2.0
Unit
5˚
5˚
5.5±0.3
5.45±0.3
Ratings
3.3±0.3
0.7±0.1
Symbol
5˚
23.4
22.0±0.5
5˚
4.0
2.0±0.2
1.1±0.1
■ Absolute Maximum Ratings (TC = 25°C)
Parameter
5˚
26.5±0.5
2.0 1.2
● Contactless relay
● Diving circuit for a solenoid
● Driving circuit for a motor
● Control equipment
● Switching power supply
10.0
4.5
■ Applications
3.0±0.3
φ3.2±0.1
1: Gate
2: Drain
3: Source
TOP-3E Package
W
3
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
L = 1.9mH, IL = 8A, 1 pulse
■ Electrical Characteristics (TC = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current
IDSS
Gate to Source leakage current
IGSS
VGS = ±30V, VDS = 0
Drain to Source breakdown voltage
VDSS
ID = 1mA, VGS = 0
Gate threshold voltage
Vth
VDS = 25V, ID = 1mA
Drain to Source ON-resistance
RDS(on)
VGS = 10V, ID = 4A
Forward transfer admittance
| Yfs |
VDS = 25V, ID = 4A
Diode forward voltage
VDSF
IDR = 8A, VGS = 0
min
typ
VDS = 720V, VGS = 0
Input capacitance (Common Source) Ciss
max
Unit
100
µA
±1
µA
900
V
2
1.3
3
5
V
1.7
Ω
−1.6
V
5.5
S
1800
pF
200
pF
Reverse transfer capacitance (Common Source) Crss
90
pF
Turn-on time (delay time)
td(on)
30
ns
Rise time
tr
VDD = 200V, ID = 4A
70
ns
Fall time
tf
VGS = 10V, RL = 50Ω
80
ns
Turn-off time (delay time)
td(off)
Thermal resistance between channel and case
Rth(ch-c)
1.25
°C/W
Thermal resistance between channel and atmosphere
Rth(ch-a)
41.67
°C/W
Output capacitance (Common Source)
Coss
VDS = 20V, VGS = 0, f = 1MHz
250
ns
1
Power F-MOS FETs
2SK2375
PD  Ta
Area of safe operation (ASO)
120
Allowable power dissipation PD (W)
Non repetitive pulse
TC=25˚C
Drain current ID (A)
30
IDP
t=100µs
10 ID
3
1ms
10ms
100ms
1
0.3
DC
7
(1) TC=Ta
(2) Without heat sink
(PD=3W)
100
VDS=25V
6
Drain current ID (A)
100
ID  VGS
80
(1)
60
40
20
TC=150˚C
5
4
3
2
150˚C
100˚C
25˚C
0˚C
1
(2)
0
0.1
1
3
10
30
100
300
1000
0
0
Drain to source voltage VDS (V)
40
20
80 100 120 140 160
Vth  TC
4
3
2
1
Drain to source ON-resistance RDS(on) (Ω)
5
60
50
ID=16A
40
30
20
8A
10
4A
2A
0
0
50
75
100
125
150
0
Case temperature TC (˚C)
| Yfs |  ID
15
20
25
25˚C
4
3
150˚C
2
1
0
1
2
3
4
5
6
Drain current ID (A)
7
8
7
8
TC=150˚C
3
100˚C
2
25˚C
1
0˚C
0
0
1
2
3
4
5
6
8
VDD=200V
VGS=10V
TC=25˚C
f=1MHz
TC=25˚C
Ciss
300
Coss
100
7
Drain current ID (A)
ton, tf, td(off)  ID
1000
100˚C
6
600
3000
TC=0˚C
5
4
30
Crss
30
10
Switching time ton,tf,td(off) (ns)
VDS=25V
4
VGS=10V
Ciss, Coss, Crss  VDS
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
Forward transfer admittance |Yfs| (S)
10
10000
0
2
5
3
5
Gate to source voltage VGS (V)
6
5
2
RDS(on)  ID
TC=25˚C
Drain to source voltage VDS (V)
VDS=25V
ID=1mA
25
1
Gate to source voltage VGS (V)
VDS  VGS
70
0
0
Ambient temperature Ta (˚C)
6
Gate threshold voltage Vth (V)
60
500
400
300
td(off)
200
ton
100
tf
0
0
40
80
120
160
200
Drain to source voltage VDS (V)
0
2
4
6
8
10
Drain current ID (A)
12