IXYS DSI30-08AC Standard rectifier Datasheet

DSI30-16AS
Standard Rectifier
VRRM
=
1600 V
I FAV
=
30 A
VF
=
1.25 V
Single Diode
Part number
DSI30-16AS
Backside: cathode
1
3
2/4
Features / Advantages:
Applications:
Package: TO-263 (D2Pak)
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
DSI30-16AS
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1700
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1600
V
IR
reverse current
VF
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
VR = 1600 V
TVJ = 25°C
40
µA
TVJ = 150°C
1.5
mA
TVJ = 25°C
1.29
V
1.60
V
1.25
V
30 A
IF =
60 A
IF =
30 A
IF =
60 A
TVJ = 150°C
TC = 130°C
rectangular
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
1.66
V
T VJ = 175 °C
30
A
TVJ = 175 °C
0.82
V
d = 0.5
for power loss calculation only
Ptot
typ.
VR = 1600 V
IF =
forward voltage drop
min.
14.1
mΩ
0.9
K/W
K/W
0.25
TC = 25°C
160
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
300
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
325
A
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
255
A
t = 8,3 ms; (60 Hz), sine
VR = 0 V
275
A
t = 10 ms; (50 Hz), sine
TVJ = 45°C
450
A²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
440
A²s
TVJ = 150 °C
325
A²s
315
A²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
Data according to IEC 60747and per semiconductor unless otherwise specified
10
pF
20130107a
DSI30-16AS
Package
Ratings
TO-263 (D2Pak)
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
Tstg
storage temperature
T VJ
virtual junction temperature
min.
typ.
max.
35
Unit
A
-55
150
°C
-40
175
°C
1)
Weight
2
FC
20
mounting force with clip
g
60
N
Product Marking
XXXXXXXXX
Part No.
IXYS yyww z
Logo
Date Code
Assembly Line
000000
Assembly Code
Ordering
Standard
Part Number
DSI30-16AS
Similar Part
DSI30-16A
DSI30-12AS
DSI30-12A
DSI30-12AC
DSI30-08AS
DSI30-08A
DSI30-08AC
Equivalent Circuits for Simulation
I
V0
R0
Package
TO-220AC (2)
TO-263AB (D2Pak) (2)
TO-220AC (2)
ISOPLUS220AC (2)
TO-263AB (D2Pak) (2)
TO-220AC (2)
ISOPLUS220AC (2)
* on die level
Delivery Mode
Tape & Reel
Quantity
800
Code No.
498378
Voltage class
1600
1200
1200
1200
800
800
800
T VJ = 175 °C
Rectifier
V 0 max
threshold voltage
0.82
R 0 max
slope resistance *
11
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Marking on Product
DSI30-16AS
V
mΩ
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
DSI30-16AS
Outlines TO-263 (D2Pak)
Dim.
L1
c2
Supplier
Option
A1
H
D
E
A
D1
W
4
L
L2
1 2 3
c
2x e
3x b2
10.92
(0.430)
mm (Inches)
2x b
E1
9.02
(0.355)
W
Inches
min
max
0.160 0.190
typ. 0.004
0.095
0.020 0.039
0.045 0.055
0.016 0.029
0.045 0.055
0.330 0.370
0.315 0.350
0.098
0.380 0.410
0.245 0.335
0,100 BSC
0.169
0.575 0.625
0.070 0.110
0.040 0.066
typ.
0.002
0.0008
All dimensions conform with
and/or within JEDEC standard.
1.78
(0.07)
3.05
(0.120)
3.81
(0.150)
A
A1
A2
b
b2
c
c2
D
D1
D2
E
E1
e
e1
H
L
L1
Millimeter
min
max
4.06
4.83
typ. 0.10
2.41
0.51
0.99
1.14
1.40
0.40
0.74
1.14
1.40
8.38
9.40
8.00
8.89
2.5
9.65
10.41
6.22
8.50
2,54 BSC
4.28
14.61 15.88
1.78
2.79
1.02
1.68
typ.
0.040
0.02
2.54 (0.100)
Recommended min. foot print
1
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
2/4
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
DSI30-16AS
Rectifier
250
60
500
50 Hz, 80% VRRM
VR = 0 V
50
400
200
40
IFSM
IF
300
TVJ = 45°C
TVJ = 45°C
30
2
It
[A]
[A]
200
150
20 TVJ = 125°C
TVJ = 150°C
2
150°C
[A s]
TVJ = 150°C
100
10
TVJ = 25°C
0
0.6
0.8
1.0
1.2
1.4
1.6
100
0.001
1.8
0
0.01
0.1
Fig. 1 Forward current versus
voltage drop per diode
4 5 6 7 8 91 0
2
Fig. 2 Surge overload current
50
Fig. 3 I t versus time per diode
40
RthHA:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
Ptot 30
3
t [ms]
t [s]
VF [V]
40
2
1
1
30
IF(AV)M
DC =
1
0.5
0.4
0.33
0.17
0.08
20
[A]
[W] 20
10
10
0
0
0
10
20
30
0
50
100
150
200
0
50
Tamb [°C]
IF(AV)M [A]
100
150
200
TC [°C]
Fig. 4 Power dissipation vs. direct output current and ambient temperature
Fig. 5 Max. forward current vs.
case temperature
1.0
0.8
Constants for ZthJC calculation:
0.6
i Rthi (K/W)
ZthJC
ti (s)
0.4
1 0.03
0.0004
[K/W]
2 0.08
0.002
3 0.2
0.003
4 0.39
0.03
5 0.2
0.29
0.2
0.0
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130107a
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