Power Transistors 2SB1416 Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD2136 Unit: mm 90˚ 10.8±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Allowing automatic insertion with radial taping 16.0±1.0 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −60 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −3 A Peak collector current ICP −5 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 Parameter 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −30 mA, IB = 0 Base-emitter voltage VBE VCE = −4 V, IC = −3 A −1.8 V Collector-emitter cutoff current (E-B short) ICES VCE = −60 V, VBE = 0 −200 µA Collector-emitter cutoff current (Base open) ICEO VCE = −30 V, IB = 0 −300 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −1 mA Forward current transfer ratio hFE1 * VCE = −4 V, IC = −1 A 40 250 hFE2 VCE = −4 V, IC = −3 A 10 Collector-emitter saturation voltage VCE(sat) Conditions Min Typ Max −60 Unit V IC = −3 A, IB = − 0.375A −1.2 V fT VCB = −5 V, IE = 0.1 A, f = 200 MHz 270 MHz Turn-on time ton IC = −1 A, IB1 = − 0.1 A, IB2 = 0.1 A 0.5 µs Storage time tstg 1.2 µs tf 0.3 µs Transition frequency Fall time Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE1 40 to 90 70 to 150 120 to 250 Publication date: March 2003 SJD00071BED 1 2SB1416 PC Ta IC VCE IC VBE −1.2 −1.2 Collector current IC (A) Collector power dissipation PC (W) IB=–8mA −1.0 1.6 1.2 0.8 0.4 VCE=–4V Ta=25˚C Without heat sink –7mA − 0.8 –6mA –5mA − 0.6 –4mA − 0.4 –3mA –2mA − 0.2 25˚C −1.0 Collector current IC (A) 2.0 –25˚C Ta=75˚C − 0.8 − 0.6 − 0.4 − 0.2 –1mA 0 0 40 80 120 160 −2 0 −4 − 0.1 Ta=75˚C Ta=25˚C Ta=–25˚C −10 −100 200 fT I E 25˚C 120 –25˚C 80 40 0 −1 −1 000 Ta=75˚C 160 −10 −100 t=1ms −1 DC − 0.1 −1 −10 100 50 0 − 0.01 −1 000 − 0.1 −1 −10 Collector current IC (A) −100 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-emitter voltage VCE (V) 2 150 104 Thermal resistance Rth (°C/W) Collector current IC (A) ICP − 0.01 − 0.1 200 Rth t −10 t=10ms VCB=–5V f=200MHz TC=25˚C 250 Collector current IC (A) Single pulse TC=25˚C SJD00071BED −1.2 Base-emitter voltage VBE (V) 300 Safe operation area IC − 0.2 − 0.4 − 0.6 − 0.8 −1.0 0 VCE=–4V Collector current IC (A) −100 0 −12 hFE IC −1 − 0.001 −1 −10 240 IC/IB=8 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC − 0.01 −8 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10 −6 Transition frequency fT (MHz) 0 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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