Power Transistors 2SD1273, 2SD1273A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Complementary to 2SB1299 Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD1273 base voltage 2SD1273A Collector to 2SD1273 emitter voltage 2SD1273A Ratings 80 VCBO 100 60 VCEO Unit 80 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 2SD1273 current 2SD1273A 16.7±0.3 4.2±0.2 7.5±0.2 0.5 +0.2 –0.1 2.54±0.25 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Collector cutoff 0.8±0.1 1.3±0.2 5.08±0.5 6 Ta=25°C 1.4±0.1 V VEBO dissipation φ3.1±0.1 V Emitter to base voltage Collector power TC=25°C 2.7±0.2 4.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 ICBO Conditions min typ max VCB = 80V, IE = 0 100 VCB = 100V, IE = 0 100 Unit µA Collector cutoff current ICEO VCE = 40V, IB = 0 100 µA Emitter cutoff current IEBO VCB = 6V, IC = 0 100 µA VCEO IC = 25mA, IB = 0 Forward current transfer ratio hFE* VCE = 4V, IC = 0.5A Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz Collector to emitter 2SD1273 voltage 2SD1273A *h FE 60 V 80 500 2500 1 50 V MHz Rank classification Rank hFE Q P O 500 to 1000 800 to 1500 1200 to 2500 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors 2SD1273, 2SD1273A PC — Ta IC — VCE (1) 40 30 20 (2) 10 5 IB=1.2mA TC=25˚C 1.0mA 0.8 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 20 40 60 80 100 120 140 160 25˚C 2 –25˚C 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 3000 –25˚C 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 300 100 30 10 3 0.1 0.3 1 3 10 ICP t=1ms IC 10ms DC 0.3 0.01 3 10 30 2SD1273A 2SD1273 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 1 30 1 0.01 0.03 10 103 3 100 3 Area of safe operation (ASO) 30 300 Collector current IC (A) 100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 1.2 1000 –25˚C 25˚C 1 0.01 0.03 10 1.0 VCE=12V f=10MHz TC=25˚C 3000 TC=100˚C Transition frequency fT (MHz) 25˚C 1 0.8 fT — IC 1000 TC=100˚C 0.6 VCE=4V Forward current transfer ratio hFE 10 0.4 10000 IC/IB=40 30 3 0.2 Base to emitter voltage VBE (V) 10000 100 Collector current IC (A) Collector current IC (A) TC=100˚C 3 0.1mA 0 1 4 1 (3) (4) 0 2 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.0 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10