Fairchild FMBSA06 Npn general purpose amplifier Datasheet

FMBSA06
FMBSA06
NPN General Purpose Amplifier
NC
C1
• This device is designed for general purpose amplifier applications at
collector currents to 300 mA.
• Sourced from Process 12.
E
B
C
pin #1 C
SuperSOTTM-6 single
Mark: .1G1
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VCEO
Collector-Emitter Voltage
Parameter
Value
80
Units
V
VCBO
VEBO
Collector-Base Voltage
80
V
Emitter-Base Voltage
4.0
IC
Collector Current
V
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Max.
Units
V(BR)CEO
Collector-Emitter Sustaining Voltage *
IC = 1.0mA, IB = 0
80
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100µA, IC = 0
4.0
V
ICEO
Collector Cut-off Current
VCE = 60V, IB = 0
0.1
µA
ICBO
Collector Cut-off Current
VCB = 80V, IE = 0
0.1
µA
V
On Characteristics
hFE
DC Current Gain
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 10mA
0.25
V
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 1.0V
1.2
V
100
100
IC = 10mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Small Signal Characteristics
fT
Current Gain Bandwidth Product
IC = 10mA, VCE = 2.0V, f = 100MHz
100
MHz
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics Ta=25°C unless otherwise noted
Symbol
PD
Parameter
Total Device Dissipation *
Max.
700
Units
mW
RθJA
Thermal Resistance, Junction to Ambient, total
180
°C/W
* Device mounted on a 1 in 2 pad of 2 oz copper.
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
FMBSA06
V CESAT - COLLECTOR EM ITTE R VOLTAGE (V)
vs Collector Current
200
VCE = 1V
125 °C
150
25 °C
100
- 40 °C
50
0.001
0.01
0.1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β = 10
0.3
125 °C
0.2
25 °C
0.1
- 40 °C
0
0.1
1
10
100
I C - COLLECTOR CURRE NT (mA)
1000
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Voltage vs Collector Current
Collector Current
β = 10 β
1
- 40 °C
0.8
β
25 °C
125 °C
0.6
β
0.4
0.1
1
10
100
I C - COLLECTOR CURRE NT (mA)
1000
1
- 40 °C
0.8
125 °C
0.4
VCB = 80 V
1
VCE = 5V
0.2
0
1
10
100
I C - COLLECTOR CURRE NT (mA)
1000
Figure 4. Base-Emitter On Voltage
vs Collector Current
V CE - COLLECTOR-EMITTER VOLTAGE (V)
10
25 °C
0.6
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
I CBO - COLLE CTOR CURRENT (nA)
β
0.4
Figure 1. Typical Pulsed Current Gain
vs Collector Current
V BEON - BAS E EMITTER ON VOLTAGE (V)
V BESAT - BASE EMITTE R VOLTAGE (V)
h FE- TYP ICAL PULSED CURRE NT GAIN
Typical Characteristics
Collector Saturation Region
2
T A = 25°C
1.5
0.1
0.01
1
IC =
1 mA
10 mA
100 mA
0.5
0.001
25
50
75
100
T A - AMBIE NT TEMP ERATURE (° C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
©2004 Fairchild Semiconductor Corporation
125
0
4000
10000
20000
30000
50000
I B - BASE CURRENT (uA)
Figure 6. Collector Saturation Region
Rev. A1, November 2004
Ω
Ω
(Continued)
Between Emitter-Base
100
117
f = 1.0 MHz
116
CAPACITANCE (pF)
BV CER - BREAKDOWN VOLTAGE (V)
FMBSA06
Typical Characteristics
115
114
113
C ib
10
Cob
1
112
111
0.1
1
10
100
1000
RESISTANCE (k Ω)
0.1
0.1
1
10
100
V CE - COLLECTOR VOLTAGE (V)
Ω
f T - GAIN BANDWIDTH PRODUCT (MHz)
Figure 7. Collector-Emitter Breakdown Voltage
with Resistance Between Emitter-Base
Figure 8. Input and Output Capacitance
vs Reverse Voltage
vs Collector Current
400
V CE = 5V
350
300
250
200
150
100
1
10
20
50
100
I C - COLLECTOR CURRENT (mA)
Figure 9. Gain Bandwidth Product
vs Collector Current
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
FMBSA06
Package Dimensions
SuperSOTTM-6
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
Rev. A1, November 2004
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2004 Fairchild Semiconductor Corporation
Rev. I13
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