IXYS IXFT70N15 Hiperfettm power mosfet Datasheet

Advanced Technical Information
HiPerFETTM
Power MOSFETs
IXFH 70N15
IXFT 70N15
VDSS
ID25
RDS(on)
trr £ 250ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
150
150
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
70
A
IDM
TC = 25°C, pulse width limited by TJM
280
A
IAR
TC = 25°C
70
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
5
V/ns
PD
Maximum Ratings
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
TO-247 AD
TO-268
(TAB)
TO-268 (IXFT) Case Style
G
(TAB)
300
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
G = Gate
S = Source
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
6
4
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
g
g
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 250 mA
150
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
V
4.0
V
±100
nA
TJ = 25°C
TJ = 125°C
25
750
mA
mA
VGS = 10 V, ID = 0.5 ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
28
mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
TO-247 AD (IXFH)
S
TJ
TJM
Tstg
TL
= 150 V
=
70
A
=
28 mW
Features
•
•
•
•
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
98583A (6/99)
1-2
IXFH 70N15
IXFT 70N15
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
30
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
45
S
3600
pF
1080
pF
360
pF
TO-247 AD (IXFH) Outline
35
ns
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
52
ns
td(off)
RG = 2 W (External)
70
ns
23
ns
180
nC
28
nC
92
nC
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
K/W
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
G
H
1.65 2.13
4.5
0.065 0.084
0.177
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.42
(TO-247)
Source-Drain Diode
0.25
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
70
A
ISM
Repetitive;
280
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
250
ns
mC
A
t rr
QRM
IRM
IF = 25A,-di/dt = 100 A/ms, VR = 25 V
TO-268AA (D3 PAK)
Dim.
A
A1
A2
b
b2
C
D
E
E1
e
H
L
L1
L2
L3
L4
© 2000 IXYS All rights reserved
0.85
8
Millimeter
Min. Max.
4.9
5.1
2.7
2.9
.02
.25
1.15
1.45
1.9
2.1
.4
.65
13.80 14.00
15.85 16.05
13.3
13.6
5.45 BSC
18.70 19.10
2.40
2.70
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
Inches
Min. Max.
.193 .201
.106 .114
.001 .010
.045 .057
.75
.83
.016 .026
.543 .551
.624 .632
.524 .535
.215 BSC
.736 .752
.094 .106
.047 .055
.039 .045
.010 BSC
.150 .161
Dim. Millimeter
Min. Max.
Inches
Min. Max.
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
2-2
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