CCD Linear Image Sensor MN3611RE Color CCD Linear Image Sensor with 720 Pixels each for R, G, and B Colors ■ Overview ■ Pin Assignments The MN3611RE is a high responsivity CCD color linear image sensor having low dark output floating photodiodes in the photodetector region, CCD analog shift registers for read out, and 720 pixels each for the primary colors R, G, and B. It can read a B6 size color document with a high quality and a resolution of 170dpi. 1 OS DS VDD øR NC ø1 NC NC NC NC NC ■ Features • 2160 (720 × R.G.B) floating photodiodes and an n-channel buried type CCD shift registers are built in a single chip. • It is possible to read a B6 size color document with a high quality and a resolution of 170dpi. • RGB primary colors type on chip color filters are used for color separation. 1 2 3 4 5 6 7 8 9 10 11 • Very high responsivity is obtained because voltage amplifier 22 21 20 19 18 17 16 15 14 13 12 VSS ø SG NC ø2 NC NC NC NC NC NC NC 2160 circuits are built in the chip. • Use of photodiodes with a new structure has made the dark output voltage very low. • Large signal output of typically 2V at saturation can be obtained. C20 (Top View) WDIP022-G-0470 ■ Application • Reading out color images in a color scanner. ø2 21 19 2 1 21 21 2 2 1 21 21 21 2 1 1 21 2 1 21 2 1 21 2157 2158 2159 2160 D4 D5 D6 øSG 22 B 51 B 52 D1 D2 D3 1 2 3 4 5 VSS B1 B2 B3 ■ Block Diagram 12121 1 21 21 21 21 2 21 21 21 21 21 2 Signal output amplifier 1 Compensation output amplifier 2 B1 to B52 : Black reference pixels Clock driver 1 2 3 4 OS DS VDD ø R D1 to D6 : Dummy invalid pixels 6 ø1 MN3611RE CCD Linear Image Sensor ■ Absolute Maximum Ratings (Ta=25˚C, VSS=0V) Symbol Rating Unit Power supply voltage Input voltage Output voltage VDD – 0.3 to +15 – 0.3 to +15 – 0.3 to +15 V Operating temperature range Topr –2 5 to + 60 ˚C Storage temperature range Tstg –4 0 to +100 ˚C Parameter VI VO V V ■ Operating Conditions • Voltage conditions (Ta=–25 to +60˚C, VSS=0V) Parameter Power supply voltage Symbol VDD Condition min typ max Unit 11.4 12.0 13.0 V CCD shift register clock High level Vø H 4.5 5.0 5.5 V CCD shift register clock Low level Vø L Shift gate clock High level Shift gate clock Low level VSH 0 4.5 0.2 5.0 0.5 5.5 V V VSL 0 0.2 0.5 Reset gate clock High level VRH 4.5 5.0 5.5 V V Reset gate clock Low level VRL 0 0.2 0.5 V • Timing conditions (Ta=–25 to +60˚C) Parameter Shift register clock frequency Symbol fC min typ max Unit See drive timing diagram. fC=1/2T Condition — 0.5 1.0 MHz Reset clock frequency (=data rate) fR See drive timing diagram. fR=1/T — 1.0 2.0 MHz Shift register clock rise time Shift regisster clock fall time t Cr See input/output timing diagram. See drive timing diagram. 0 0 60 60 100 100 ns ns 0 0 50 50 100 100 ns ns 0 100 — ns t Cf t Sr Shift clock (øSG) rise time Shift clock (øSG) fall time t Sf Shift clock set up time t Ss Shift clock pulse width t Sw 200 1000 — ns Shift clock hold time t Sh 0 100 — ns Reset clock rise time t Rr 0 15 30 ns Reset clock fall time 0 15 30 ns Reset clock pulse width t Rf t Rw Reset clock hold time t Rh 60 100 250 125 — — ns ns min typ max Unit 350 400 pF See input/output timing diagram. See drive timing diagram. See input/output timing diagram. See drive timing diagram. ■ Electrical Characteristics • Clock input capacitance (Ta=–25 to +60˚C) Parameter Shift register clock input capacitance Reset clock input capacitance Shift clock input capacitance Symbol Condition Cø1 ,C ø2 f reg =1MHz — CøR f reg =1MHz — 15 30 pF CøSG f reg =1MHz — 130 200 pF min typ max Unit — 8 15 mA • DC characteristics Parameter Power supply current Symbol I DD Condition VDD =+12V MN3611RE CCD Linear Image Sensor • AC characteristics Symbol Parameter Signal output delay time Condition tos min typ max Unit — 100 — ns ■ Optical Characteristics <Inspection conditions> • Ta=25˚C, VDD=12V, VøH=VSH=VRH=5V (pulse), fC=0.5MHz, fR=1MHz, Tint (accumulation time)=10ms • Light source: Daylight type fluorescent lamp with IR/UV cutting filter • Optical system: A slit with an aperture dimensions of 20mm × 20mm is used at a distance of 200mm from the sensor (equivalent to F=10). • Load resistance = 100k Ohms • These specifications apply to the 2160 valid pixels excluding the dummy pixels D1 to D6. min typ max red Symbol RR 4.5 7.2 9.9 green RG RB 10.0 13.5 17.0 6.5 9.6 12.7 Parameter Responsivity blue Photo response non-uniformity Condition Unit V/lx· s PRNU Note 1 — — 15 % — 1.5 — 2.0 3 — % V Odd/even bit non-uniformity Saturation output voltage O/E Note 2 VSAT Note 3 Saturation exposure SE Note 3 0.13 — lx·s VDRK Note 4 — 0.8 2.0 mV Dark signal output non-uniformity DSNU Note 4 — 0.2 3.0 mV Shift register total transfer efficiency — 1 kΩ V Dark signal output voltage STTE 92 99 Output impedance ZO — — Dynamic range Signal output pin DC level DR Note 5 — VOS Note 5 V DS Note 6 2,500 4.5 4.5 — 6.0 Compensation output pin DC level 3.5 3.5 Note 6 — 50 100 Signal and compensation output pin DC level difference |VOS –V DS | 6.0 % V mV Note 1) The photo response non-uniformity (PRNU) for each color is defined by the following equation, where Xave is the average output voltage of the 720 valid pixels and ∆x is the absolute value of the difference between Xave and the voltage of the maximum (or minimum) output pixel, when the surface of the photo-sites is illuminated with light having a uniform distribution over the entire surface. x ×100 (%) PRNU= Xave The incident light intensity shall be 50% of the standard saturation light intensity. Note 2) The odd/even bit non-uniformity (O/E) for each color is defined by the following equation, where Xave is the average output voltage of the 720 valid pixels for each color and Xn is the output voltage of the ‘n’th pixel for each color, when the surface of the photo-sites is illuminated with light having a uniform distribution over the entire surface. 719 ∑ | Xn–Xn+1 | n=1 ×100 (%) 719 × X ave The incident light intensity shall be 50% of the standard saturation light intensity. Note 3) The Saturation output voltage (VSAT) is defined as the output voltage at the point when the linearity of the photoelectric characteristics cannot be maintained as the incident light intensity is increased. [The light intensity of exposure at this point is called the saturation exposure (SE).] Note 4) The dark signal output voltage (VDRK) is defined as the average output voltage of the 2160 pixels in the dark condition at Ta=25˚C and Tint=10ms. Normally, the dark output voltage doubles for every 8 to 10˚C rise in Ta, and is proportional to Tint. The dark signal output non-uniformity (DSNU) is defined as the difference between the maximum output voltage among all the valid pixels and VDRK in the dark condition at Ta=25˚C and Tint=10ms. O/E= VDRK DSNU MN3611RE CCD Linear Image Sensor ■ Optical Characteristics (continued) Note 5) The dynamic range (DR) is defined by the following equation. VSAT VDRK Since the dark signal voltage is proportional to the accumulation time, the dynamic range becomes wider when the accumulation time is shorter. Note 6) The signal output pin DC level (VOS) and the compensation output pin DC level (VDS) are the voltage values shown in the following figure. DR= Reset feed through level OS DS VDS VOS VSS VSS ■ Pin Descriptions Pin No. Symbol 1 OS Pin name Signal output 2 DS Compensation output 3 VDD Power supply 4 øR 5 6 7 NC ø1 NC 8 NC Non connection 9 NC Non connection 10 NC Non connection 11 NC Non connection 12 13 NC NC Non connection Non connection 14 NC Non connection 15 NC Non connection 16 NC Non connection 17 NC Non connection 18 19 20 NC ø2 NC Non connection CCD Shift clock gate Non connection 21 øSG Shift clock gate 22 VSS Ground Reset clock Non connection CCD Shift clock gate Non connection Note) Connect all NC pins externally to VSS. Condition MN3611RE CCD Linear Image Sensor ■ Construction of the Image Sensor transferred to the CCD transfer for each odd and even pixel at the timing of the shift clock (øSG). The optical signal electric charge transferred to this analog shift register is successively transferred out and guided to the output region. • A buried type CCD that can be driven by a two phase clock (ø1, ø2) is used for the analog shift register. c) Output region • The signal charge that is transferred to the output region is sent to the detector where impedance transformation is done using two source follower stages. • The DC level component and the clock noise component not containing optical signals are output from the DS pin. • By carrying out differential amplification of the two outputs OS and DS externally, it is possible to obtain an output signal with a high S/N ratio by reducing the clock noise, etc. The MN3611RE can be made up of the three sections of—a) photo detector region, b) CCD transfer region (shift register), and c) output region. a) Photo detector region • The photoelectric conversion device consists of an 11µm floating photodiode and a 3µm channel stopper for each pixel, and 2160 of these devices are linearly arranged side by side at a pitch of 14µm. • The photo detector's windows are 14µm × 14µm squares and light incident on areas other than these windows is optically shut out. • The photo detector is provided with 52 optically shielded pixels (black dummy pixels) which serve as the black reference. b) CCD Transfer region (shift register) • The light output that has been photoelectrically converted is ■ Timing Diagram (1) I/O timing Integration Time (Tint.) ø SG ø1 ø2 øR 1 2 3 4 6 7 8 9 10 11 58 59 60 61 62 63 64 65 66 2222 2224 2226 2223 2225 DS OS 1 2 3 4 6 7 8 B1 B2 Blank feed (for 8 pixels) B50 B51 B52 Black reference pixel signal (for 52 pixels) D1 D2 D3 R1 G1 B1 Valid pixel signal (for 2160 pixels) Invalid pixel signal (for 3 pixels) Invalid pixel signal (for 3 pixels) 90% (2) Drive timing ø1 10% t Cf 90% 50% 10% t Cr t Sr t Sf 90% ø2 10% øSG øR 90% t Rr ø1 2159 2160D4 D5 D6 Note) Repeat the transfer pulses (cp) for more than 1114 periods. t RW t RS 90% 50% 10% t Rf t Rh DS t Ss t SW t Sh t OS T Reference level OS 90% Signal output voltage MN3611RE CCD Linear Image Sensor ■ Graphs and Characteristics Spectral Response Characteristics Relative responsivity (%) 100 80 Blue 60 Green Red 40 20 0 400 500 600 700 Wavelength (nm) 800